公开(公告)号：US06429305B1

公开(公告)日：2002-08-06

申请号：US09549831

申请日：2000-04-14

Applicant: Chi-Yao Chang ,  Chia-Ching Chang ,  Kuen-Lin Leu ,  Chih-Tung Tsai ,  Jing-Wen Ting ,  Chih-Hung Lin

Inventor： Chi-Yao Chang ,  Chia-Ching Chang ,  Kuen-Lin Leu ,  Chih-Tung Tsai ,  Jing-Wen Ting ,  Chih-Hung Lin

IPC: C07H2104

CPC classification number: C07K14/61 ,  A01K2217/05

Abstract: The invention relates to new fish growth hormones, nucleic acids encoding them, and transgenic fish that express them.

Abstract translation: 本发明涉及新的鱼生长激素，编码它们的核酸和表达它们的转基因鱼。

公开(公告)号：US06127223A

公开(公告)日：2000-10-03

申请号：US186743

申请日：1998-11-05

Applicant: Chih-Hung Lin

Inventor： Chih-Hung Lin

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: The present invention provides a method of fabricating a flash memory cell without silicide formation on the source regions. A liquid deposition oxide layer is formed selectively only on a common source region by using a mask layer. The liquid deposition oxide layer is formed on the common source region in order to cover the common source region. Therefore, once a salicide step is performed, a silicide layer will not form on the common source region.

Abstract translation: 本发明提供一种制造闪存单元而不在源区上形成硅化物的方法。 通过使用掩模层，仅在公共源极区域上形成液体沉积氧化物层。 为了覆盖公共源极区域，在公共源极区域上形成有液相沉积氧化物层。 因此，一旦进行了自对准硅化物步骤，就不会在共源极区上形成硅化物层。

公开(公告)号：US5281860A

公开(公告)日：1994-01-25

申请号：US994433

申请日：1992-12-21

Applicant: William R. Krenik ,  Norman L. Culp ,  Chih-Hung Lin

Inventor： William R. Krenik ,  Norman L. Culp ,  Chih-Hung Lin

IPC: G08C13/00 ,  G08C19/30 ,  G11C27/02 ,  H03K17/00 ,  H03M1/12 ,  H04N1/028 ,  H03K17/76 ,  H03K5/00

CPC classification number: G11C27/026

Abstract: A method and apparatus for an improved multiple channel sensor interface circuit is described which comprises a plurality of input integrator circuits (35) coupled in parallel; a switched capacitor multiplexer (37) coupled to the input integrator circuits (35); and an output integrator stage (39) coupled to the switched capacitor multiplexer (37). An additional embodiment is described wherein a multiple channel voltage sensor interface circuit comprising a plurality of switched capacitor storage elements (S26 . . . S28) is coupled to a plurality of inputs; a plurality of integrator amplifiers (51, 53) is coupled to the switched capacitor storage elements (C22 . . . C30); and timing circuitry is coupled to the switched capacitor storage elements (C221 . . . C30) and to integrator amplifiers (51, 53) operable to selectively enable sampling of the inputs.

Abstract translation: 描述了一种用于改进的多通道传感器接口电路的方法和装置，其包括并联耦合的多个输入积分器电路（35） 耦合到输入积分器电路（35）的开关电容复用器（37）; 以及耦合到开关电容多路复用器（37）的输出积分器级（39）。 描述了另外的实施例，其中包括多个开关电容器存储元件（S26 ... S28）的多通道电压传感器接口电路耦合到多个输入; 多个积分放大器（51,53）耦合到开关电容器存储元件（C22 ... C30）; 并且定时电路耦合到开关电容器存储元件（C221 ... C30）和可操作以选择性地实现输入采样的积分放大器（51,53）。

公开(公告)号：US20240219012A1

公开(公告)日：2024-07-04

申请号：US18091364

申请日：2022-12-29

Applicant: Chih-Hung Lin ,  Kun-Chuan Chang ,  Keng-Yu Tsao ,  Yu-Hsuan Sung

Inventor： Chih-Hung Lin ,  Kun-Chuan Chang ,  Keng-Yu Tsao ,  Yu-Hsuan Sung

IPC: F21V23/00 ,  F21V23/04 ,  F21V23/06

CPC classification number: F21V23/005 ,  F21V23/0414 ,  F21V23/06

Abstract: The method plans a predetermined circuit pattern on an inner surface of a constructive object and plans a contact portion on an outer surface of the constructive object for external electric connection. Laser is used to scan an area in which both the circuit pattern and the contact portion are located. A through hole is formed to make both the circuit pattern and the contact portion uninsulated and to form an irregular roughened surface on the area scanned by heat of the laser. A layer of conductive material is deposited on the roughened surface by a mixture of a catalyst solution and metal powder. The constructive object is immersed in a reaction tank to implement electroless plating to gradually thicken the layer of conductive material to become a conductor. The conductor penetrating the through hole makes the circuit pattern and the contact portion electrically connected.

公开(公告)号：US20210225579A1

公开(公告)日：2021-07-22

申请号：US16792273

申请日：2020-02-16

Applicant: Chih-Hung Lin ,  Kun-Chuan Chang

Inventor： Chih-Hung Lin ,  Kun-Chuan Chang

IPC: H01F27/28 ,  H01F27/24 ,  H01F27/06

Abstract: A coil module includes a first coil set; a second coil set, including a first coil body, a second coil body and an insulative separator disposed between the first coil body and the second coil body, the separator having an adopting hole, the first coil body having an open winding surrounding the adapting hole and fixed on a side of the separator, the second coil body having an open winding surrounding the adapting hole and fixed on another side of the separator; and a coil base sheathing the second coil set with exposing the adopting hole. The first coil set surrounds the adopting hole and is fixed on the coil base to form a coil module.

公开(公告)号：US09250295B2

公开(公告)日：2016-02-02

申请号：US13553811

申请日：2012-07-19

Applicant: Shean-Kwang Chou ,  Hung-Hsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen

Inventor： Shean-Kwang Chou ,  Hung-Hsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen

IPC: G06G7/54 ,  G01R31/36

CPC classification number: G01R31/36 ,  G01R31/3651

Abstract: The present invention relates to a high-voltage battery charging simulation system that includes a simulation high-voltage battery pack, a simulation battery management system, a multi-party communication device, and a charging station. The voltage of the simulation high-voltage battery pack can be calculated and updated immediately by the simulation battery management system to simulate the feature of real battery pack, so that it can detect the operation of the multi-party communication device and the charging station.

Abstract translation: 本发明涉及一种高压电池充电模拟系统，其包括模拟高电压电池组，模拟电池管理系统，多方通信装置和充电站。 仿真高压电池组的电压可以通过模拟电池管理系统立即计算和更新，以模拟实际电池组的特征，从而可以检测多方通信设备和充电站的运行情况。

公开(公告)号：USD722770S1

公开(公告)日：2015-02-24

申请号：US29479823

申请日：2014-01-21

Applicant: Chih-Hung Lin

Designer： Chih-Hung Lin

公开(公告)号：US08872184B2

公开(公告)日：2014-10-28

申请号：US12712209

申请日：2010-02-25

Applicant: Yu-Cheng Chen ,  Chih-Hung Lin ,  Yi-Hui Li

Inventor： Yu-Cheng Chen ,  Chih-Hung Lin ,  Yi-Hui Li

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1339 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L27/1288 ,  G02F1/13394 ,  G02F1/13458 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/1248

Abstract: An array structure, which includes a TFT, a passivation layer, a pixel electrode, a first connecting layer and a first spacer is provided. The TFT includes a gate, a source and a drain. The passivation layer overlays the TFT. The pixel electrode is located on the passivation layer. The first connecting layer is located on the pixel electrode and electrically connected to the pixel electrode and the drain. The first spacer is located on the first connecting layer.

Abstract translation: 提供了包括TFT，钝化层，像素电极，第一连接层和第一间隔物的阵列结构。 TFT包括栅极，源极和漏极。 钝化层覆盖TFT。 像素电极位于钝化层上。 第一连接层位于像素电极上并与像素电极和漏极电连接。 第一间隔件位于第一连接层上。

公开(公告)号：US08546226B2

公开(公告)日：2013-10-01

申请号：US13189632

申请日：2011-07-25

Applicant: Chih-Ming Wang ,  Ping-Chia Shih ,  Chun-Sung Huang ,  Chi-Cheng Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin ,  Yau-Kae Sheu

Inventor： Chih-Ming Wang ,  Ping-Chia Shih ,  Chun-Sung Huang ,  Chi-Cheng Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin ,  Yau-Kae Sheu

IPC: H01L21/336 ,  H01L29/792

CPC classification number: H01L21/28282 ,  H01L29/792

Abstract: A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, wherein the method comprises steps as following: a pad oxide layer and a first hard mask layer are sequentially formed on a substrate. The pad oxide layer and the first hard mask layer are then etched through to form an opening exposing a portion of the substrate. Subsequently, an oxide-nitride-oxide (ONO) structure with a size substantially less than or equal to the opening is formed to coincide with the portion of the substrate exposed from the opening.

Abstract translation: 一种用于制造氧化硅 - 氧化物 - 氧化物 - 硅（SONOS）非易失性存储单元的方法，其中该方法包括以下步骤：在衬底上依次形成衬垫氧化物层和第一硬掩模层。 然后将衬垫氧化物层和第一硬掩模层蚀刻通过以形成露出衬底的一部分的开口。 随后，形成具有基本上小于或等于该开口的尺寸的氧化物 - 氧化物 - 氧化物（ONO）结构，以与从该开口露出的该基板的一部分重合。

公开(公告)号：US08286258B2

公开(公告)日：2012-10-09

申请号：US12631546

申请日：2009-12-04

Applicant: Chin-Wei Tien ,  Yao-Ting Chung ,  Chih-Hung Lin ,  Jain-Shing Wu

Inventor： Chin-Wei Tien ,  Yao-Ting Chung ,  Chih-Hung Lin ,  Jain-Shing Wu

IPC: H04L29/06

CPC classification number: G06F21/554 ,  G06F21/6263

Abstract: A monitor method and a monitor apparatus for monitoring a data of hardware are provided. The data has private information, identification information and at least one first network transmission address. The monitor apparatus comprises a storage unit and a processing unit. The data is stored in the storage unit according to the identification information. The processing unit is configured to record the identification information and the at least one first network transmission address of the data in a mark information table. In response to a sending system call, when a transmission is arranged to transmit the private information of the data to a second network transmission address which is different from the at least one first network transmission address, the processing unit will output a signal to cease the transmission.

Abstract translation: 提供了一种用于监视硬件数据的监视方法和监视装置。 数据具有私人信息，识别信息和至少一个第一网络传输地址。 监视器装置包括存储单元和处理单元。 数据根据识别信息存储在存储单元中。 处理单元被配置为将标识信息和数据的至少一个第一网络传输地址记录在标记信息表中。 响应于发送系统呼叫，当发送被设置为将数据的私有信息发送到与至少一个第一网络发送地址不同的第二网络发送地址时，处理单元将输出信号以停止 传输。