Adjustable meander line resistor
    41.
    发明授权
    Adjustable meander line resistor 有权
    可调弯管线电阻

    公开(公告)号:US09059168B2

    公开(公告)日:2015-06-16

    申请号:US13365021

    申请日:2012-02-02

    摘要: An adjustable meander line resistor comprises a plurality of series circuits. Each series circuit comprises a first resistor formed on a first doped region of a transistor, a second resistor formed on a second doped region of the transistor and a connector coupled between the first resistor and the second resistor. A control circuit is employed to control the on and off of the transistor so as to achieve the adjustable meander line resistor.

    摘要翻译: 可调式曲折线电阻器包括多个串联电路。 每个串联电路包括形成在晶体管的第一掺杂区域上的第一电阻器,形成在晶体管的第二掺杂区域上的第二电阻器和耦合在第一电阻器和第二电阻器之间的连接器。 采用控制电路来控制晶体管的导通和截止,从而实现可调谐的曲折线电阻。

    Voltage-controlled oscillator
    42.
    发明授权
    Voltage-controlled oscillator 有权
    压控振荡器

    公开(公告)号:US08665030B2

    公开(公告)日:2014-03-04

    申请号:US13325442

    申请日:2011-12-14

    IPC分类号: H03B5/12

    摘要: A voltage-controlled oscillator circuit includes a first transistor, a second transistor, a first resonator circuit, a second resonator circuit, a first current path and a second current path. A drain of the first transistor is coupled to a gate of the second transistor and to a first end of the first resonator circuit. A source of the first transistor is coupled to the first current path and to a first end of the second resonator circuit. A drain of the second transistor is coupled to a gate of the first transistor and to a second end of the first resonator circuit. A source of the second transistor is coupled to the second current path and a second end of the second resonator circuit.

    摘要翻译: 压控振荡器电路包括第一晶体管,第二晶体管,第一谐振器电路,第二谐振器电路,第一电流路径和第二电流路径。 第一晶体管的漏极耦合到第二晶体管的栅极和第一谐振器电路的第一端。 第一晶体管的源极耦合到第一电流路径和第二谐振器电路的第一端。 第二晶体管的漏极耦合到第一晶体管的栅极和第一谐振器电路的第二端。 第二晶体管的源极耦合到第二电流路径和第二谐振器电路的第二端。

    Adjustable Meander Line Resistor
    43.
    发明申请
    Adjustable Meander Line Resistor 有权
    可调式曲折线电阻

    公开(公告)号:US20130200447A1

    公开(公告)日:2013-08-08

    申请号:US13365021

    申请日:2012-02-02

    摘要: An adjustable meander line resistor comprises a plurality of series circuits. Each series circuit comprises a first resistor formed on a first doped region of a transistor, a second resistor formed on a second doped region of the transistor and a connector coupled between the first resistor and the second resistor. A control circuit is employed to control the on and off of the transistor so as to achieve the adjustable meander line resistor.

    摘要翻译: 可调式曲折线电阻器包括多个串联电路。 每个串联电路包括形成在晶体管的第一掺杂区域上的第一电阻器,形成在晶体管的第二掺杂区域上的第二电阻器和耦合在第一电阻器和第二电阻器之间的连接器。 采用控制电路来控制晶体管的导通和截止,从而实现可调谐的曲折线电阻。

    INTEGRATED CIRCUIT GROUND SHIELDING STRUCTURE
    44.
    发明申请
    INTEGRATED CIRCUIT GROUND SHIELDING STRUCTURE 有权
    集成电路接地屏蔽结构

    公开(公告)号:US20130147023A1

    公开(公告)日:2013-06-13

    申请号:US13313240

    申请日:2011-12-07

    IPC分类号: H01L23/552

    摘要: The present disclosure provides an Integrated Circuit (IC) device. The IC device includes a first die that contains an electronic component. The IC device includes second die that contains a ground shielding structure. The IC device includes a layer disposed between the first die and the second die. The layer couples the first die and the second die together. The present disclosure also involves a microelectronic device. The microelectronic device includes a first die that contains a plurality of first interconnect layers. An inductor coil structure is disposed in a subset of the first interconnect layers. The microelectronic device includes a second die that contains a plurality of second interconnect layers. A patterned ground shielding (PGS) structure is disposed in a subset of the second interconnect layers. The microelectronic device includes an underfill layer disposed between the first and second dies. The underfill layer contains one or more microbumps.

    摘要翻译: 本公开提供了一种集成电路(IC)装置。 IC器件包括包含电子元件的第一管芯。 IC器件包括包含接地屏蔽结构的第二管芯。 IC器件包括设置在第一管芯和第二管芯之间的层。 该层将第一管芯和第二管芯结合在一起。 本公开还涉及微电子器件。 微电子器件包括包含多个第一互连层的第一管芯。 电感线圈结构设置在第一互连层的子集中。 微电子器件包括包含多个第二互连层的第二管芯。 图案化接地屏蔽(PGS)结构设置在第二互连层的子集中。 微电子器件包括设置在第一和第二裸片之间的底部填充层。 底层填充层包含一个或多个微胶囊。