公开(公告)号：US20220334488A1

公开(公告)日：2022-10-20

申请号：US17858172

申请日：2022-07-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/20 ,  C23C14/08 ,  G03F7/38 ,  C23C16/455 ,  G03F7/40 ,  G03F7/32 ,  C23C16/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20220291582A1

公开(公告)日：2022-09-15

申请号：US17705795

申请日：2022-03-28

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US20220028685A1

公开(公告)日：2022-01-27

申请号：US17498437

申请日：2021-10-11

Applicant: Inpria Corporation

Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

IPC: H01L21/02 ,  H01L21/67

Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

公开(公告)号：US20210048745A1

公开(公告)日：2021-02-18

申请号：US17085024

申请日：2020-10-30

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US20200371439A1

公开(公告)日：2020-11-26

申请号：US16987120

申请日：2020-08-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20190137870A1

公开(公告)日：2019-05-09

申请号：US16238779

申请日：2019-01-03

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  G03F7/32

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US10228618B2

公开(公告)日：2019-03-12

申请号：US15291738

申请日：2016-10-12

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph Burton Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20160116839A1

公开(公告)日：2016-04-28

申请号：US14920107

申请日：2015-10-22

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph Burton Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

Abstract translation: 基于具有烷基配体的锡离子来描述有机金属辐射抗蚀剂组合物。 一些组合物具有支链烷基配体以提供改进的图案对比，同时保持高度的溶液稳定性。 具有不同烷基配体的化合物的共混物可以提供图案化方面的进一步改进。 具有不超过25nm的半间距的高分辨率图案可以实现不超过约4.5nm的线宽粗糙度。 已经开发了允许形成具有非常低的金属污染物的烷基氧化锡氢氧化物组合物的合成技术。