公开(公告)号：US07639864B2

公开(公告)日：2009-12-29

申请号：US11359781

申请日：2006-02-23

Applicant: Robert J. Socha ,  Jang Fung Chen

Inventor： Robert J. Socha ,  Jang Fung Chen

IPC: G06K9/00 ,  G06F17/50 ,  G03F1/00

CPC classification number: G03F7/705 ,  G03F7/70125

Abstract: Optimization of illumination for a full-chip layer is disclosed. A pitch frequency of the full-chip layer is determined so as to generate a pitch frequency histogram of the full-chip layer. The pitch frequency indicates how often a given pitch occurs in the full-chip layer. The pitch frequency histogram is equated to be the first eigenfunction from the sum of coherent system representation of a transformation cross coefficient. An integral equation for the first eigenfunction of the transformation cross coefficient is solved so as to define the optimal illumination for imaging the full-chip layer.

Abstract translation: 公开了全芯片层的照明优化。 确定全芯片层的音调频率以产生全芯片层的音调频率直方图。 音调频率表示在全芯片层中发生给定间距的频率。 根据变换交叉系数的相干系统表示的和，音调频率直方图等于第一本征函数。 解决了变换交叉系数的第一特征函数的积分方程，以便定义用于对全芯片层进行成像的最佳照明。

公开(公告)号：US20090138500A1

公开(公告)日：2009-05-28

申请号：US12248833

申请日：2008-10-09

Applicant: Zhiqiang YUAN ,  Jang Fung Chen ,  Sangbong Park

Inventor： Zhiqiang YUAN ,  Jang Fung Chen ,  Sangbong Park

IPC: G06F17/30

CPC classification number: G06F16/289 ,  G06F16/2246

Abstract: A method of managing data with a relational data structure, wherein the data having one or more tree structures having sub-tree structures, each tree or sub-tree structure comprising nodes, and relationship information indicating a relationship between the nodes, comprises allocating at least one of the tree structures or the sub-tree structures into another tree structure according to the relationship information, if the relationship information indicates that a node in the at least one of the tree structures or the sub-tree structures relates to one or more of the nodes of the another tree structure.

Abstract translation: 一种使用关系数据结构管理数据的方法，其中具有一个或多个具有子树结构的树结构的数据，包括节点的每个树或子树结构以及指示节点之间的关系的关系信息包括至少分配 如果所述关系信息指示所述至少一个所述树结构或所述子树结构中的节点与所述树结构或所述子树结构中的一个或多个相关联，则根据所述关系信息将所述树结构或所述子树结构中的一个重构为另一个树结构 另一个树结构的节点。

公开(公告)号：US07494753B2

公开(公告)日：2009-02-24

申请号：US11339827

申请日：2006-01-26

Applicant: Jang Fung Chen ,  Gabriel Berger ,  Tamer Coskun ,  Sangbong Park ,  Ting Chen

Inventor： Jang Fung Chen ,  Gabriel Berger ,  Tamer Coskun ,  Sangbong Park ,  Ting Chen

IPC: G03F9/00 ,  G03C5/00

CPC classification number: G03F7/70625 ,  G03F1/36 ,  G03F1/68 ,  G03F7/705 ,  G03F7/70516

Abstract: Improved calibration of a resist model used in critical dimension (CD) calculation is disclosed. A dose function is obtained based on optical tool to be used form the resist on a wafer. The dose function indicates the amount of energy in a resist. The dose function is convolved with a convolution kernel to obtain a modified dose function. The convolution kernel has variable diffusion lengths in different directions. The convolution kernel may include multiple Gaussian kernels each having variable diffusion lengths in different directions. The modified dose function is converted into a CD value which is compared with a target value. If necessary, the diffusion lengths of the Gaussian kernels are adjusted based on the comparison result.

Abstract translation: 公开了在关键尺寸（CD）计算中使用的抗蚀剂模型的改进的校准。 基于晶片上的抗蚀剂使用的光学工具获得剂量函数。 剂量函数表示抗蚀剂中的能量。 剂量函数与卷积核卷积以获得修改的剂量函数。 卷积核在不同方向具有可变扩散长度。 卷积核可以包括在不同方向上具有可变扩散长度的多个高斯核。 将修改的剂量函数转换为与目标值进行比较的CD值。 如果需要，基于比较结果调整高斯核的扩散长度。

公开(公告)号：US07485396B2

公开(公告)日：2009-02-03

申请号：US12071439

申请日：2008-02-21

Applicant: Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

Inventor： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC: G03F9/00

CPC classification number: G03F1/36

Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

Abstract translation: 一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征 的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

公开(公告)号：US20080206656A1

公开(公告)日：2008-08-28

申请号：US12071439

申请日：2008-02-21

Applicant: Thomas Laidig ,  Kurt E. Wampler ,  Donglas Van Den Broeke ,  Jang Fung Chen

Inventor： Thomas Laidig ,  Kurt E. Wampler ,  Donglas Van Den Broeke ,  Jang Fung Chen

IPC: G03F1/00 ,  G06F17/50

CPC classification number: G03F1/36

Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

公开(公告)号：US07247574B2

公开(公告)日：2007-07-24

申请号：US10756830

申请日：2004-01-14

Applicant: Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

Inventor： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

IPC: H01L21/302 ,  H01L21/461

CPC classification number: G03F1/36 ,  G03F7/70441

Abstract: A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

Abstract translation: 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区之间的相消干涉的区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

公开(公告)号：US07246342B2

公开(公告)日：2007-07-17

申请号：US10626858

申请日：2003-07-25

Applicant: Stephen Duan-Fu Hsu ,  Noel Corcoran ,  Jang Fung Chen

Inventor： Stephen Duan-Fu Hsu ,  Noel Corcoran ,  Jang Fung Chen

IPC: G06F17/50

CPC classification number: G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

Abstract: A method of printing a pattern having vertically oriented features and horizontally oriented features on a substrate utilizing dipole illumination, which includes the steps of: identifying background areas contained in the pattern; generating a vertical component mask comprising non-resolvable horizontally oriented features in the background areas; generating a horizontal component mask comprising non-resolvable vertically oriented features in the background areas; illuminating said vertical component mask utilizing an X-pole illumination; and illuminating said horizontal component mask utilizing a Y-pole illumination.

Abstract translation: 一种利用偶极照明在基板上印刷具有垂直定向特征和水平取向特征的图案的方法，其包括以下步骤：识别图案中包含的背景区域; 在背景区域中生成包括不可解决水平定向特征的垂直分量掩模; 在背景区域中生成包括不可解析的垂直取向特征的水平分量掩模; 利用X极照明照亮所述垂直分量掩模; 并利用Y极照明照亮所述水平分量掩模。

公开(公告)号：US06951701B2

公开(公告)日：2005-10-04

申请号：US10222972

申请日：2002-08-19

Applicant: Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

Inventor： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC: G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03B27/72

CPC classification number: G03F1/32 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70591

Abstract: A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

Abstract translation: 一种通过使用光学曝光工具将对应于利用高透射衰减相移掩模的集成电路的光刻图案光学转移到半导体衬底上的方法。 该方法包括以下步骤：产生对应于光刻图案的衍射图案，其中衍射图案表示对应于光刻图案的多个空间频率分量; 确定哪个空间频率分量需要被光学曝光工具中的透镜捕获，以便准确地再现光刻图案; 确定所述光学曝光工具所需的一组照明条件以捕获准确地再现所述光刻图案所需的空间频率分量; 并用该组照明条件照亮高透射衰减相移掩模。

公开(公告)号：US06519760B2

公开(公告)日：2003-02-11

申请号：US09840305

申请日：2001-04-24

Applicant: Xuelong Shi ,  Jang Fung Chen ,  Stephen Hsu

Inventor： Xuelong Shi ,  Jang Fung Chen ,  Stephen Hsu

IPC: G06F1750

CPC classification number: G03F7/705 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441

Abstract: Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

公开(公告)号：US08495529B2

公开(公告)日：2013-07-23

申请号：US12613344

申请日：2009-11-05

Applicant: Douglas van Den Broeke ,  Jang Fung Chen

Inventor： Douglas van Den Broeke ,  Jang Fung Chen

IPC: G06F17/50

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.

Abstract translation: 一种产生具有光学邻近校正特征的掩模的方法。 该方法包括以下步骤：（a）获得具有要在基底上成像的特征的期望目标图案; （b）确定在对所述掩模进行成像时要利用的第一焦点设置; （c）基于目标图案和第一焦点设置确定第一干涉图; （d）基于所述第一干涉图，确定表示所述掩模内的辅助特征相对于要成像的特征的最佳布置的第一播种站点; （e）选择表示相对于第一焦点设置的预定义散焦量的第二焦点设置; （f）基于目标图案和第二焦点设置确定第二干涉图; （g）基于所述第二干涉图，确定代表所述掩模内的辅助特征相对于要成像的特征的最佳布置的第二播种站点; 和（h）产生具有包含第一播种部位和第二播种部位的形状的辅助特征。