公开(公告)号：US07246342B2

公开(公告)日：2007-07-17

申请号：US10626858

申请日：2003-07-25

申请人： Stephen Duan-Fu Hsu ,  Noel Corcoran ,  Jang Fung Chen

发明人： Stephen Duan-Fu Hsu ,  Noel Corcoran ,  Jang Fung Chen

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of printing a pattern having vertically oriented features and horizontally oriented features on a substrate utilizing dipole illumination, which includes the steps of: identifying background areas contained in the pattern; generating a vertical component mask comprising non-resolvable horizontally oriented features in the background areas; generating a horizontal component mask comprising non-resolvable vertically oriented features in the background areas; illuminating said vertical component mask utilizing an X-pole illumination; and illuminating said horizontal component mask utilizing a Y-pole illumination.

摘要翻译： 一种利用偶极照明在基板上印刷具有垂直定向特征和水平取向特征的图案的方法，其包括以下步骤：识别图案中包含的背景区域; 在背景区域中生成包括不可解决水平定向特征的垂直分量掩模; 在背景区域中生成包括不可解析的垂直取向特征的水平分量掩模; 利用X极照明照亮所述垂直分量掩模; 并利用Y极照明照亮所述水平分量掩模。

公开(公告)号：US07725872B2

公开(公告)日：2010-05-25

申请号：US11797407

申请日：2007-05-03

申请人： Stephen Duan-Fu Hsu ,  Noel Corcoran ,  Jang Fung Chen

发明人： Stephen Duan-Fu Hsu ,  Noel Corcoran ,  Jang Fung Chen

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of printing a pattern having vertically oriented features and horizontally oriented features on a substrate utilizing dipole illumination, which includes the steps of: identifying background areas contained in the pattern; generating a vertical component mask comprising non-resolvable horizontally oriented features in the background areas; generating a horizontal component mask comprising non-resolvable vertically oriented features in the background areas; illuminating said vertical component mask utilizing an X-pole illumination; and illuminating said horizontal component mask utilizing a Y-pole illumination.

摘要翻译： 一种利用偶极照明在基板上印刷具有垂直定向特征和水平取向特征的图案的方法，其包括以下步骤：识别图案中包含的背景区域; 在背景区域中生成包括不可解决水平定向特征的垂直分量掩模; 在背景区域中生成包括不可解析的垂直取向特征的水平分量掩模; 利用X极照明照亮所述垂直分量掩模; 并利用Y极照明照亮所述水平分量掩模。

公开(公告)号：US07774736B2

公开(公告)日：2010-08-10

申请号：US11714147

申请日：2007-03-06

申请人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

发明人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

公开(公告)号：US07247574B2

公开(公告)日：2007-07-24

申请号：US10756830

申请日：2004-01-14

申请人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

发明人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区之间的相消干涉的区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

公开(公告)号：US20100167183A1

公开(公告)日：2010-07-01

申请号：US12630280

申请日：2009-12-03

申请人： Duan-Fu Stephen HSU ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

发明人： Duan-Fu Stephen HSU ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

IPC分类号： G03F1/00 ,  G03F7/20 ,  G03B27/42

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

摘要翻译： 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

公开(公告)号：US07617476B2

公开(公告)日：2009-11-10

申请号：US11898647

申请日：2007-09-13

申请人： Duan-Fu Stephen Hsu ,  Noel Corcoran ,  Jang Fung Chen ,  Douglas Van Den Broeke

发明人： Duan-Fu Stephen Hsu ,  Noel Corcoran ,  Jang Fung Chen ,  Douglas Van Den Broeke

IPC分类号： G06F17/50

CPC分类号： G03F7/70466 ,  G03F1/70 ,  G03F7/70433

摘要： A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of: (a) determining a minimum critical dimension and pitch associated with a process to be utilized to image the multiple patterns; (b) generating an anchoring feature; (c) disposing the anchoring feature adjacent a first feature of the target pattern; (d) growing the anchoring feature a predetermined amount so as to define a first area; (e) assigning any feature within the first area to a first pattern; (f) disposing the anchoring feature adjacent a second feature of the target pattern; (g) growing the anchoring feature the predetermined amount so as to define a second area; and (h) assigning any feature within the second area to a second pattern. Steps (c)-(h) are then repeated until the densely spaced features within the target pattern have been assigned to either the first or second pattern.

摘要翻译： 一种用于将包含要印刷在晶片上的特征的目标图案分解为多个图案的方法。 该方法包括以下步骤：（a）确定与要用于对多个图案成像的过程相关联的最小临界尺寸和间距; （b）产生锚固特征; （c）将所述锚定特征设置在所述目标图案的第一特征附近; （d）使锚定特征增长预定量以限定第一区域; （e）将第一区域内的任何特征分配给第一模式; （f）将所述锚定特征设置在所述目标图案的第二特征附近; （g）使锚定特征增长预定量以限定第二区域; 和（h）将第二区域内的任何特征分配给第二模式。 然后重复步骤（c） - （h），直到目标图案内密集间隔的特征被分配给第一或第二图案。

公开(公告)号：US07138212B2

公开(公告)日：2006-11-21

申请号：US10705231

申请日：2003-11-12

申请人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

发明人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

IPC分类号： G01F9/00

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

摘要翻译： 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

公开(公告)号：US07985515B2

公开(公告)日：2011-07-26

申请号：US12630280

申请日：2009-12-03

申请人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

发明人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

IPC分类号： G03F1/00

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

摘要翻译： 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

公开(公告)号：US06915505B2

公开(公告)日：2005-07-05

申请号：US10395888

申请日：2003-03-25

申请人： Stephen D. Hsu ,  Noel Corcoran ,  Jang Fung Chen

发明人： Stephen D. Hsu ,  Noel Corcoran ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G06F17/50

CPC分类号： G03F7/701 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70425 ,  G03F7/70433

摘要： A method of printing a gate pattern on a substrate comprising the steps of: identifying at least one area in the pattern in which one of the gate features overlays one of the active regions; reducing a width dimension of the one of the gate features at the location which the one of the gate features overlays the one of the active regions; extracting the gate features from the pattern; decomposing the gate features into a vertical component mask and a horizontal component mask; and illuminating the vertical component mask and the horizontal component mask utilizing dipole illumination.

摘要翻译： 一种在衬底上印刷栅极图案的方法，包括以下步骤：识别图案中的至少一个区域，其中一个栅极特征覆盖有源区域中的一个; 减小所述栅极特征之一的位置处的所述栅极特征之一的宽度尺寸覆盖所述有效区域中的一个; 从图案中提取门特征; 将门特征分解为垂直分量掩模和水平分量掩模; 并利用偶极照明照亮垂直分量掩模和水平分量掩模。

公开(公告)号：US07666554B2

公开(公告)日：2010-02-23

申请号：US11588326

申请日：2006-10-27

申请人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

发明人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

IPC分类号： G03F1/00

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

摘要翻译： 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。