公开(公告)号：US07585786B2

公开(公告)日：2009-09-08

申请号：US11010223

申请日：2004-12-10

申请人： Juseon Goo ,  Eunkee Hong ,  Hong-Gun Kim ,  Kyu-Tae Na

发明人： Juseon Goo ,  Eunkee Hong ,  Hong-Gun Kim ,  Kyu-Tae Na

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/316 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76897

摘要： Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated to a temperature of at least about 400° C. The spin-on-glass layer may comprise a siloxane-based material, a silanol-based material or a silazane-based material.

摘要翻译： 提供了在半导体器件中形成绝缘层的方法，其中在其上包括多个间隙区域的半导体结构上形成金属氧化物层。 在金属氧化物层上形成旋涂玻璃层，然后将半导体结构加热到至少约400℃的温度。旋涂玻璃层可以包括基于硅氧烷的材料，硅烷醇 的材料或硅氮烷基材料。

公开(公告)号：US07429637B2

公开(公告)日：2008-09-30

申请号：US11298785

申请日：2005-12-09

申请人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

发明人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

IPC分类号： C08G77/12

CPC分类号： H01L21/76837 ,  C08L83/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76232 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/823475 ,  H01L21/823481

摘要： Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

摘要翻译： 可用于半导体制造方法的组合物包括重均分子量为约300至约3,000，多分散指数为约1.8至约3.0的全氢化硅氮烷。 还提供了包含本发明组合物的方法，半导体制造工艺中形成膜的方法以及制造半导体器件的方法。

公开(公告)号：US07015144B2

公开(公告)日：2006-03-21

申请号：US10776823

申请日：2004-02-11

申请人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

发明人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

IPC分类号： H01L21/311 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76837 ,  C08L83/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76232 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/823475 ,  H01L21/823481

摘要： Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

摘要翻译： 可用于半导体制造方法的组合物包括重均分子量为约300至约3,000，多分散指数为约1.8至约3.0的全氢化硅氮烷。 还提供了包含本发明组合物的方法，半导体制造工艺中形成膜的方法以及制造半导体器件的方法。