公开(公告)号：US5711913A

公开(公告)日：1998-01-27

申请号：US564192

申请日：1995-12-18

申请人： Nobuichi Seki ,  Masanori Kimura ,  Yoshiyuki Ichizawa ,  Yukio Koshidaka

发明人： Nobuichi Seki ,  Masanori Kimura ,  Yoshiyuki Ichizawa ,  Yukio Koshidaka

IPC分类号： B29C49/08 ,  B29C49/06 ,  B29C49/14 ,  B29C49/42 ,  B29C49/48 ,  B29C49/58 ,  B29C49/76 ,  B29L22/00 ,  B29C49/28

CPC分类号： B29C49/48 ,  B29C49/58 ,  B29C49/76 ,  B29C2049/4294 ,  B29C2049/5827 ,  B29C2049/6615 ,  B29C49/06 ,  B29C49/08 ,  B29C49/4205

摘要： The present invention is intended to prevent the deformation of a cylindrical mouth portion of a preform when a blow pressure acts thereon in a diameter expanding direction during biaxial orientation blow molding. During biaxial orientation blow molding, sealing of the blow pressure is accomplished by means of a neck ring P1 circumferentially provided on a lower end of the circumferentially provided on a lower end of the circumferential surface of a cylindrical mouth portion P2 of a preform to thereby make the blow pressure act uniformly on the whole area of the cylindrical mouth portion P2, whereby the unreasonable deformation of the cylindrical mouth portion P2 due to the ununiform application of blow pressure thereto can totally be eliminated.

摘要翻译： PCT No.PCT / JP95 / 00853 Sec。 371 1995年12月18日第 102（e）1995年12月18日日期PCT 1995年4月28日PCT PCT。 出版物WO95 / 29804 日期：1995年11月9日本发明是为了防止在双轴取向吹塑成形时吹塑压力在直径扩大方向作用于其上的预成型件的圆筒形口部的变形。 在双轴取向吹塑成型中，吹塑压力的密封是通过圆周设置在圆周的设置在预成型件的圆筒形口部P2的圆周表面的下端的下端上的颈环P1来实现的 吹出压力均匀地作用在圆筒形口部P2的整个区域上，从而可以完全消除由于吹塑压力不均匀引起的圆筒形口部P2的不合理的变形。

公开(公告)号：US08871857B2

公开(公告)日：2014-10-28

申请号：US13390446

申请日：2010-08-04

申请人： Masanori Kimura ,  Toshio Yamato

发明人： Masanori Kimura ,  Toshio Yamato

IPC分类号： C08L83/00 ,  C08L83/04 ,  C09D5/02 ,  C09D151/06 ,  C09D123/28 ,  C08G77/26 ,  C09D7/12 ,  C08L23/28 ,  C08L75/04

CPC分类号： C08G77/26 ,  C08L23/283 ,  C08L75/04 ,  C08L83/04 ,  C09D5/022 ,  C09D5/028 ,  C09D7/70 ,  C09D123/283 ,  C09D151/06 ,  C08L2666/20 ,  C08L2666/02

摘要： A coating composition contains (A) a water-based emulsion containing (a) amino group-containing polyorganosiloxane having a self crosslinking property, (b) chlorinated polyolefin, and (c) a water dispersible polyurethane resin, and (B) spherical particles made up of a rubbery elastic body mixed and dispersed in the water-based emulsion (A). The water-based emulsion (A) can be obtained by mixing a first emulsion containing the amino group-containing polyorganosiloxane (a), a second emulsion containing the chlorinated polyolefin (b), and the water dispersion of the polyurethane resin (c). The coating composition can form a coating film excellent in preservation stability, coating uniformity, working life, having good non-tackness, water repellancy, lubricity, and excellent in adhesiveness and abrasion resistance.

摘要翻译： 涂料组合物含有（A）含有（a）具有自交联性的含氨基的聚有机硅氧烷的水性乳液，（b）氯化聚烯烃和（c）水分散性聚氨酯树脂，和（B）制成的球形颗粒 将其混合并分散在水性乳液（A）中的橡胶状弹性体的上方。 水性乳液（A）可以通过混合含有含氨基的聚有机硅氧烷（a）的第一乳液，含有氯化聚烯烃（b）的第二乳液和聚氨酯树脂（c）的水分散体）来获得。 涂料组合物可以形成保存稳定性，涂布均匀性，使用寿命，非粘性，防水性，润滑性，粘合性和耐磨性优异的优异的涂膜。

公开(公告)号：US20070097031A1

公开(公告)日：2007-05-03

申请号：US10559728

申请日：2005-05-24

申请人： Kunihiro Mima ,  Masanori Kimura ,  Teiichi Kimura

发明人： Kunihiro Mima ,  Masanori Kimura ,  Teiichi Kimura

IPC分类号： G09G3/28

CPC分类号： G09G3/294 ,  G09G3/2965 ,  G09G2310/066 ,  G09G2320/0233

摘要： A method for driving a plasma display panel is disclosed in which generation of a region having brightness non-uniformity can be reduced over an entire screen without changing the voltage and pulse width of sustain pulses thus enabling suppression of an increase in power consumption. This method for driving a plasma display panel comprises an initialization period for forming a discharge cell at an intersection where scan electrode and sustain electrode meet data electrode and generating initialization discharge in the cell, a writing period for generating writing discharge in the discharge cell, and a sustain period for generating sustain discharge by alternately applying sustain pulses to the scan electrode and sustain electrode of the discharge cell, and rise time of the sustain pulses to be applied to the scan electrode and sustain electrode during the sustain period is shortened at a frequency of once every several times.

摘要翻译： 公开了一种用于驱动等离子体显示面板的方法，其中可以在整个屏幕上减少具有亮度不均匀性的区域的生成，而不改变维持脉冲的电压和脉冲宽度，从而能够抑制功耗的增加。 用于驱动等离子体显示面板的方法包括用于在扫描电极和维持电极与数据电极相交并在单元中产生初始化放电的交叉处形成放电单元的初始化时段，用于在放电单元中产生写入放电的写入周期，以及 用于通过对维持周期的扫描电极和维持电极交替施加维持脉冲而产生维持放电的维持周期，并且在维持周期期间将被施加到扫描电极和维持电极的维持脉冲的上升时间缩短为频率 每隔几次。

公开(公告)号：US20050060730A1

公开(公告)日：2005-03-17

申请号：US10937400

申请日：2004-09-10

申请人： Yoshinobu Soeda ,  Kaoru Sato ,  Munenori Aoyagi ,  Masanori Kimura ,  Takehiko Ide

发明人： Yoshinobu Soeda ,  Kaoru Sato ,  Munenori Aoyagi ,  Masanori Kimura ,  Takehiko Ide

IPC分类号： G11B17/04 ,  G11B33/14 ,  G11B17/03 ,  G11B33/02

CPC分类号： G11B17/056 ,  G11B33/142

摘要： An optical pick-up module includes rotating means, a carriage mounting at least a light source and various optical members and disposed movably, and a cover having a first opening formed thereon, a tray having a second opening and having the optical pick-up module attached thereto in order to expose a part of the optical pick-up module form the second opening, and a housing for holding the tray to freely appear, and a third opening is provided on a part of the optical disk attachment region outside portion of the tray which is opposed to the first opening.

摘要翻译： 光学拾取模块包括旋转装置，安装至少一个光源的滑架和各种光学构件并且可移动地设置，以及具有形成在其上的第一开口的盖，具有第二开口并具有光学拾取模块的托盘 以便将光拾取组件的一部分暴露于第二开口，以及用于保持托盘自由出现的壳体，并且第三开口设置在第二开口的光盘安装区域外部的一部分上 与第一开口相对的托盘。

公开(公告)号：US06678460B1

公开(公告)日：2004-01-13

申请号：US09460866

申请日：1999-12-14

申请人： Isao Kogure ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Masanori Kimura ,  Keiko Takeda ,  Hisao Osabe

发明人： Isao Kogure ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Masanori Kimura ,  Keiko Takeda ,  Hisao Osabe

IPC分类号： H04N591

CPC分类号： G11B5/0086 ,  G11B5/588 ,  G11B20/10527 ,  G11B2020/10537 ,  G11B2020/10879 ,  G11B2220/91 ,  H04N5/782 ,  H04N9/8211

摘要： A magnetic reproducer for reproducing data recorded on a magnetic tape by forming tracks sequentially and obliquely along a longitudinal direction of the magnetic tape, has magnetic heads for reproducing the information by sequentially scanning the tracks formed on the magnetic tape with a first track width for a first recording system or a second track width for a second recording system wider than that for the first recording system. And, a gap width between the magnetic heads is set at a value which is wider than the first track width and narrower than the second track width.

摘要翻译： 一种用于通过沿着磁带的纵向方向依次形成轨道来再现记录在磁带上的数据的磁性再现器，具有用于通过以形成在磁带上的轨迹顺序扫描形成磁道的磁头， 第一记录系统或第二记录系统的第二轨道宽度比第一记录系统宽。 并且，磁头之间的间隙宽度被设定为比第一轨道宽度宽且比第二轨道宽度窄的值。

公开(公告)号：US06674961B1

公开(公告)日：2004-01-06

申请号：US09471699

申请日：1999-12-23

申请人： Hiroya Mori ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Hisao Osabe ,  Masanori Kimura

发明人： Hiroya Mori ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Hisao Osabe ,  Masanori Kimura

IPC分类号： H04N5926

CPC分类号： G11B5/00878 ,  G11B15/1875 ,  G11B15/467 ,  H04N5/772 ,  H04N5/78263 ,  H04N9/7921

摘要： In a magnetic recording device and method, a magnetic reproduction method and its method and a tape recording medium, the performance can be improved. In the case of successively and obliquely forming tracks along the longitudinal direction of a second magnetic tape having a width wider than a first magnetic tape and continuously recording recording data for at least two tracks in a digital recording format on each track, each track is to be formed at a predetermined track pitch set based on the recording time and the reproduction signal characteristic. Thereby, recording data based on the digital recording format which is applied to the first magnetic tape can keep a practically sufficient C/N ratio and can be recorded on the second magnetic tape for a long time. And thus, a magnetic recording device and method, a magnetic reproduction device and method, and a tape recording medium capable of improving the performance can be realized.

摘要翻译： 在磁记录装置和方法，磁再现方法及其方法和磁带记录介质中，可以提高性能。 在沿着宽度比第一磁带宽度大的第二磁带的纵向连续倾斜地形成磁道的情况下，并且在每个磁道上连续记录数字记录格式的至少两个磁道的记录数据， 以基于记录时间和再现信号特性的预定轨道间距形成。 因此，基于应用于第一磁带的数字记录格式的记录数据可以保持实际上足够的C / N比，并且可以长时间记录在第二磁带上。 因此，可以实现能够提高性能的磁记录装置和方法，磁再现装置和方法以及磁带记录介质。

公开(公告)号：US06348180B1

公开(公告)日：2002-02-19

申请号：US09492001

申请日：2000-01-26

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N2(V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N1(V) and N2(V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G的值（mm2 /℃·min），其中F是单晶的拉伸速率（mm / min），G是沿着单晶的平均晶体内温度梯度（°C / mm） 在硅熔点的温度范围内拉伸方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀产生的吸杂能力 整个晶圆表面和硅单晶 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开但没有OSF环出现。

公开(公告)号：US06334896B1

公开(公告)日：2002-01-01

申请号：US09600033

申请日：2000-07-11

申请人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206

摘要： A method for producing a silicon single crystal, wherein, when a silicon single crystal is grown by the Czochralski method, the crystal is pulled with such conditions as present in a region defined by a boundary between a V-rich region and an N-region and a boundary between an N-region and an I-rich region in a defect distribution chart showing defect distribution which is plotted with D [mm] as abscissa and F/G [mm2/° C.·min] as ordinate, wherein D represents a distance between center of the crystal and periphery of the crystal, F/G [mm/min] represents a pulling rate and G [° C./mm] represents an average temperature gradient along the crystal pulling axis direction in the temperature range of from the melting point of silicon to 1400° C., and time required for crystal temperature to pass through the temperature region of from 900° C. to 600° C. is controlled to be 700 minutes or shorter, and a silicon single crystal wafer grown by the Czochralski method, which is a silicon single crystal wafer having N-region for its entire plane, and does not generate OSFs by a single-step thermal oxidation treatment, but generates OSFs by a two-step thermal oxidation treatment. According to the method, a silicon single crystal wafer of an extremely low defect density, which has the N-region for the entire plane of the crystal, is obtained by the CZ, while maintaining high productivity.

摘要翻译： 一种硅单晶的制造方法，其中，当通过切克劳斯斯克方法生长硅单晶时，以存在于富V区和N区之间的边界的区域中的条件拉伸晶体 和缺陷分布图中的N区域和富I区域之间的边界，示出了以D [mm]为横坐标绘制的缺陷分布，F / G [mm2 /℃·min]为纵坐标，其中D 表示晶体的中心和晶体的周边之间的距离，F / G [mm / min]表示拉伸速度，G [℃/ mm]表示在温度范围内沿着拉晶轴方向的平均温度梯度 从硅的熔点到1400℃，晶体温度通过900℃至600℃的温度所需的时间被控制为700分钟或更短，并且硅单晶 通过Czochralski方法生长的晶片，其是硅单体 晶片在其整个平面上具有N区，并且不通过单步热氧化处理产生OSF，而是通过两步热氧化处理产生OSF。 根据该方法，通过CZ获得具有用于整个晶体平面的N区域的具有极低缺陷密度的硅单晶晶片，同时保持高生产率。

公开(公告)号：US6120599A

公开(公告)日：2000-09-19

申请号：US454841

申请日：1999-12-06

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×min，其中F为 单晶的拉伸速度（mm / min），G是在硅熔点至1400℃的温度范围内沿着牵引方向的平均晶体内温度梯度（DEG C./mm）。另外 拉伸单晶，使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。

公开(公告)号：US5980630A

公开(公告)日：1999-11-09

申请号：US81665

申请日：1998-05-20

申请人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068

摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.

摘要翻译： 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。