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157 条记录 (耗时 0.028 秒)

    Rotary actuator with cushion mechanism
    41.
    发明授权
    Rotary actuator with cushion mechanism 有权

    公开(公告)号：US06435072B1

    公开(公告)日：2002-08-20

    申请号：US09793575

    申请日：2001-02-27

    申请人： Akihiro Hirano ,  Kenji Koiwa ,  Kiyoshi Takeuchi

    发明人： Akihiro Hirano ,  Kenji Koiwa ,  Kiyoshi Takeuchi

    IPC分类号： F15B1522

    摘要： The invention provides a rotary actuator having a rack driven in an oscillating manner by an air pressure, a pinion engaged with the rack, and a cushion mechanism for stopping the rack to at least one normal or inverse stroke end in a cushioning manner. The cushion mechanism has an exhaust port open to a pressure chamber at a position close to a chamber end rather than a port hole, a flow amount adjusting mechanism for restricting a flow amount of the exhaust air discharged from the exhaust port, and a cushion packing mounted to an outer peripheral surface of the piston and operating so as to shut the port hole from the pressure chamber immediately before the piston reaches the stroke end, thereby discharging the air within the pressure chamber through the flow amount adjusting mechanism.

    Silver halide color photographic light-sensitive material
    43.
    发明授权
    Silver halide color photographic light-sensitive material 失效
    卤化银彩色摄影感光材料

    公开(公告)号：US5965322A

    公开(公告)日：1999-10-12

    申请号：US802437

    申请日：1997-02-18

    申请人： Toshiyuki Makuta ,  Koki Nakamura ,  Kiyoshi Takeuchi

    发明人： Toshiyuki Makuta ,  Koki Nakamura ,  Kiyoshi Takeuchi

    IPC分类号： G03C7/30 ,  G03C7/34 ,  G03C7/392 ,  G03C1/06

    CPC分类号： G03C7/3006 ,  G03C7/344 ,  G03C7/346 ,  G03C7/39236

    摘要： There is disclosed a silver halide color photographic light-sensitive material that contains, in photographic constitutional layers on a support, a hydrazine-series reducing agent for color formation, and a phenol-series magenta coupler having an acylamino group at the 5-position, and/or a naphthol-series cyan coupler having an amido group at the 5-position. The light-sensitive material makes low-replenishment and low-discharge processing possible, and exhibits good color reproducibility and good color-forming property.

    摘要翻译： 公开了一种卤化银彩色照相感光材料，其在载体上的照相构成层中含有用于着色的肼系还原剂和在5-位具有酰氨基的酚系品红成色剂， 和/或在5位具有酰胺基的萘酚系青色成色剂。 感光材料可以进行低补充和低放电处理，并且具有良好的色彩再现性和良好的着色性。

    MISFET and complementary MISFET device having high performance source and drain diffusion layer
    44.
    发明授权
    MISFET and complementary MISFET device having high performance source and drain diffusion layer 失效
    MISFET和具有高性能源极和漏极扩散层的互补MISFET器件

    公开(公告)号：US5962892A

    公开(公告)日：1999-10-05

    申请号：US540911

    申请日：1995-10-11

    申请人： Kiyoshi Takeuchi

    发明人： Kiyoshi Takeuchi

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L27/092 ,  H01L29/04 ,  H01L29/08 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/66628 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0847

    摘要： A source and drain diffusion layer of a transistor has a junction of a shallow depth and low in parasitic resistance and parasitic capacitance.The transistor includes a gate insulator formed on a principal plane of a semiconductor substrate, a gate electrode formed on the gate insulator, and source and drain diffusion layers of one conductivity type formed on the principal plane of the semiconductor substrate across the gate electrode. A semiconductor thin film layer doped with an impurity of the same conductivity type is selectively deposited on the principal plane of the semiconductor substrate on which the source and drain diffusion layers are formed. A facet face is formed at an end portion of the semiconductor thin film which opposes to a sidewall of the gate electrode. The facet face has an inclination angle between a sidewall face of the gate electrode and the principal plane of the semiconductor substrate.

    摘要翻译： 晶体管的源极和漏极扩散层具有浅深度和寄生电阻和寄生电容低的结。 晶体管包括形成在半导体衬底的主平面上的栅极绝缘体，形成在栅极绝缘体上的栅极电极以及形成在半导体衬底的跨越栅电极的主平面上的一种导电类型的源极和漏极扩散层。 掺杂有相同导电类型的杂质的半导体薄膜层选择性地沉积在其上形成有源极和漏极扩散层的半导体衬底的主平面上。 在半导体薄膜的与栅电极的侧壁相对的端部形成刻面。 小平面在栅电极的侧壁面和半导体衬底的主平面之间具有倾斜角。

    FET semiconductor integrated circuit device having a planar element structure
    45.
    发明授权
    FET semiconductor integrated circuit device having a planar element structure 失效
    FET半导体集成电路器件具有平面元件结构

    公开(公告)号：US5869867A

    公开(公告)日：1999-02-09

    申请号：US814992

    申请日：1997-03-14

    申请人： Kiyoshi Takeuchi

    发明人： Kiyoshi Takeuchi

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/74 ,  H01L27/12 ,  H01L29/417 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L29/78648 ,  H01L21/743 ,  H01L27/1203 ,  H01L29/41733

    摘要： In a semiconductor device, an extra wiring area generated by the connection of an upper layer wiring to an element on a semiconductor substrate is reduced to improve the level of integration, and the parasitic capacitances between the gate and the source-drain regions are reduced to enhance the performance of the circuit.A gate electrode is formed via a gate insulating film on a semiconductor layer formed in the semiconductor substrate. This semiconductor layer is for forming the source region and the drain region, where the source region and the drain region are formed on the left and right of the gate electrode with the gate electrode at the center. Wirings connected to the source region are formed on the same side of the gate electrode. Wirings connected to the drain region are formed on the opposite side of the gate electrode with the semiconductor layer in between.

    摘要翻译： 在半导体器件中，通过将上层布线连接到半导体基板上的元件而产生的额外布线区域被减小以提高积分电平，并且栅极和源极 - 漏极区域之间的寄生电容减少到 提高电路的性能。 在半导体衬底中形成的半导体层上经由栅极绝缘膜形成栅电极。 该半导体层用于形成源极区域和漏极区域，其中源极区域和漏极区域形成在栅极电极的左侧和右侧，栅极电极位于中心。 连接到源极区的布线形成在栅电极的同一侧。 连接到漏极区的布线形成在栅电极的相对侧上，其间具有半导体层。

    Cap with a hinged top lid
    46.
    发明授权
    Cap with a hinged top lid 失效

    公开(公告)号：US5762216A

    公开(公告)日：1998-06-09

    申请号：US786653

    申请日：1997-01-21

    申请人： Kiyoshi Takeuchi

    发明人： Kiyoshi Takeuchi

    IPC分类号： B65D47/08 ,  B65D43/24

    CPC分类号： B65D47/0828 ,  B65D47/0809

    摘要： A cap comprises a cap body and a top lid, which are united by a hinge. A rubber-like elastic member is provided on the cap body and/or the top lid such as to be elastically deformed between the cap body and the top lid when the top lid is closed.

    Silver halide color photographic light-sensitive material
    47.
    发明授权
    Silver halide color photographic light-sensitive material 失效
    卤化银彩色摄影感光材料

    公开(公告)号：US5693450A

    公开(公告)日：1997-12-02

    申请号：US653346

    申请日：1996-05-24

    申请人： Toshiyuki Makuta ,  Koki Nakamura ,  Kiyoshi Takeuchi ,  Hiroo Takizawa

    发明人： Toshiyuki Makuta ,  Koki Nakamura ,  Kiyoshi Takeuchi ,  Hiroo Takizawa

    IPC分类号： G03C7/00 ,  G03C7/30 ,  G03C7/388 ,  G03C7/392 ,  G03C7/413 ,  G03C1/06

    CPC分类号： G03C7/3885 ,  G03C7/39236 ,  G03C7/3017 ,  G03C7/3022

    摘要： There is disclosed a silver halide color photographic light-sensitive material having at least one photographic constitutional layer on a support, wherein at least one reducing agent for color formation, which is a specific hydrazine compound, at least one dye-forming coupler, and at least one high-boiling-point organic solvent whose electron-donative parameter .DELTA..nu..sub.D at 25.degree. C. is 80 or more, are contained in at least one of said photographic constitutional layers. The above light-sensitive material enables low replenishment and reduced discharge of a color developer; can form colors favorably even when the coating film's pH is low; and is reduced in stain due to long-term storage of the light-sensitive material or stain after the processing of the light-sensitive material.

    摘要翻译： 公开了一种卤化银彩色照相感光材料，其在载体上具有至少一个照相构成层，其中至少一种用于着色的还原剂是特定的肼化合物，至少一种染料形成成色剂 在25℃下的供电参数DELTA nu D为80以上的至少一种高沸点有机溶剂包含在至少一个所述照相结构层中。 上述感光材料使得彩色显影剂的补充能够减少和减少放电; 即使涂膜的pH低，也可以有利地形成颜色; 并且在感光材料的加工之后由于感光材料的长期储存或污渍而导致的污渍减少。

    Silver halide color photographic material
    48.
    发明授权
    Silver halide color photographic material 失效
    卤化银彩色照相材料

    公开(公告)号：US5683853A

    公开(公告)日：1997-11-04

    申请号：US604243

    申请日：1996-02-21

    申请人： Toshiyuki Makuta ,  Koki Nakamura ,  Kiyoshi Takeuchi

    发明人： Toshiyuki Makuta ,  Koki Nakamura ,  Kiyoshi Takeuchi

    IPC分类号： G03C7/30 ,  G03C7/392 ,  G03C1/06

    CPC分类号： G03C7/39236 ,  G03C7/3022

    摘要： A silver halide color photographic material is disclosed, which comprises a support having thereon at least one silver halide emulsion layer, wherein the emulsion layer contains at least one silver halide emulsion layer, wherein said emulsion layer contains at least one dye-forming coupler and at least one reducing agent for coloring represented by the following formula (I), and further the film pH of said silver halide color photographic material is 6.5 or less: R.sup.11 --NH--NH--X--R.sup.12 (I) wherein R.sup.11 represents an aryl group, or a heterocyclic group; R.sup.12 represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heterocyclic group; X represents --SO.sub.2 --, --CO--, --COCO--, --CO--O--, --CO--N(R.sup.13)--, --COCO--O--, --COCO--N(R.sup.13)-- or --SO.sub.2 --N(R.sup.13)--; where R.sup.13 represents a hydrogen atom or a group described for R.sup.12.

    摘要翻译： 公开了一种卤化银彩色照相材料，其包括其上具有至少一个卤化银乳剂层的载体，其中所述乳剂层含有至少一种卤化银乳剂层，其中所述乳剂层含有至少一种染料形成成色剂， 至少一种由下式（I）表示的着色剂，进一步地，所述卤化银彩色照相材料的膜pH为6.5以下：R11-NH-NH-X-R12（I）其中R11表示芳基 ，或杂环基; R 12表示烷基，烯基，炔基，芳基或杂环基; X表示-SO 2 - ， - CO - ， - COO - ， - CO-O - ， - CO-N（R 13） - ， - COO-O-，-COCO-N（R 13） - 或-SO 2 -N ） - ; 其中R 13表示氢原子或R 12所述的基团。

    Effective channel length simulation using a single sample transistor
    50.
    发明授权
    Effective channel length simulation using a single sample transistor 失效
    使用单个样品晶体管的有效通道长度模拟

    公开(公告)号：US5481485A

    公开(公告)日：1996-01-02

    申请号：US445578

    申请日：1995-05-22

    申请人： Kiyoshi Takeuchi

    发明人： Kiyoshi Takeuchi

    IPC分类号： H01L29/78 ,  G06F17/50 ,  H01L21/336 ,  G06F17/00

    CPC分类号： G06F17/5018 ,  G06F17/5036

    摘要： In a device simulation apparatus, the structural parameters of a single sample field effect transistor are retrieved from a memory and a set of voltage parameters is established. A source-drain current value and a potential distribution are derived from the structural parameters. A source-drain resistance value is then derived from the source-drain current value and one of the voltage parameters and a channel resistivity value is derived from the potential distribution and the source-drain current value. One of the voltage parameters is successively updated to repeat the process on the updated parameter to produce a said plurality of source-drain current values and a plurality of channel resistivity values. The effective channel length of the transistor is determined from the source-drain resistance values and the channel resistivity values.

    摘要翻译： 在器件仿真装置中，从存储器检索单个采样场效应晶体管的结构参数，建立一组电压参数。 源极 - 漏极电流值和电位分布从结构参数得到。 源极 - 漏极电阻值然后从源极 - 漏极电流值导出，并且电压参数中的一个和沟道电阻率值是从电势分布和源极 - 漏极电流值导出的。 电压参数中的一个被连续更新，以重复更新参数上的处理，以产生所述多个源 - 漏电流值和多个通道电阻率值。 晶体管的有效沟道长度根据源极 - 漏极电阻值和沟道电阻率值确定。