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50 条记录 (耗时 0.032 秒)

    Chemical amplification resist compositions and process for the formation of resist patterns
    41.
    发明授权
    Chemical amplification resist compositions and process for the formation of resist patterns 失效
    化学放大抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06200724B1

    公开(公告)日：2001-03-13

    申请号：US08715880

    申请日：1996-09-19

    申请人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    发明人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    IPC分类号： G03C173

    CPC分类号： G03F7/0045 ,  G03F7/039

    摘要： A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

    摘要翻译： 一种新颖的化学增幅抗蚀剂组合物，其包含碱溶性基础树脂，光致酸产生剂和溶解抑制剂，其中构成所述溶解抑制剂分子的基质部分的环状或非环状结构含有至少一个含有孤对的部分 其可以提供足以将所述基础树脂的碱溶性部分移动并收集在所述溶解抑制剂化合物的所述分子的一侧上和在所述分子的一侧上的氢键。 抗蚀剂组合物可以表现出优异的灵敏度和分辨率，因此可用于在光刻工艺中形成非常精细的抗蚀剂图案。 还公开了形成这种抗蚀剂图案的方法。

    Resist composition, a process for forming a resist pattern and a process for manufacturing a semiconductor device
    42.
    发明授权
    Resist composition, a process for forming a resist pattern and a process for manufacturing a semiconductor device 失效
    抗蚀剂组合物，形成抗蚀剂图案的工艺和制造半导体器件的工艺

    公开(公告)号：US5910392A

    公开(公告)日：1999-06-08

    申请号：US882734

    申请日：1997-06-26

    申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi

    发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi

    IPC分类号： H01L21/3065 ,  G03F7/004 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  G03C1/492

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

    摘要： The present invention discloses a chemically amplified resist composition that is able to form a resist pattern that can be exposed in short wavelength regions, has good transparency, sensitivity, dry-etch resistance and resolution, while also exhibiting excellent adhesion to the substrate. This chemically amplified resist composition comprises: the combination of a base resin comprised of a polymer that is itself insoluble in a basic aqueous solution and contains at least (A) a monomer unit I having carboxylic acid or phenol protected with a specific protective group, and (B) a monomer unit II having an ester group or ether group that contains a cyclic carbonate structure, and can become soluble in a basic aqueous solution when the protective group of the monomer unit I is deprotected by the effect of the acid; and, a photo acid generator capable of generating an acid that can provoke deprotection of the protective group of monomer unit I when decomposed by absorption of imaging radiation.

    摘要翻译： 本发明公开了一种化学放大抗蚀剂组合物，其能够形成可在短波长区域中曝光的抗蚀剂图案，具有良好的透明度，灵敏度，耐干蚀刻性和分辨率，同时对基材表现出优异的粘合性。 该化学放大抗蚀剂组合物包括：由本身不溶于碱性水溶液且至少包含（A）具有被特定保护基保护的羧酸或苯酚的单体单元I的聚合物组成的基础树脂的组合，以及 （B）具有含有环状碳酸酯结构的酯基或醚基的单体单元II，当单体单元I的保护基被酸的作用脱保护时，可溶于碱性水溶液; 以及能够产生当通过吸收成像辐射分解时能够引发单体单元I的保护基的脱保护的酸的光酸反应产物。

    Method for examining surface of copper layer in circuit board and process for producing circuit board
    46.
    发明授权
    Method for examining surface of copper layer in circuit board and process for producing circuit board 失效
    电路板铜层表面检测方法及电路板生产工艺

    公开(公告)号：US5633121A

    公开(公告)日：1997-05-27

    申请号：US662299

    申请日：1996-06-12

    申请人： Takahisa Namiki ,  Yasuo Yamagishi ,  Ei Yano

    发明人： Takahisa Namiki ,  Yasuo Yamagishi ,  Ei Yano

    IPC分类号： G01N21/88 ,  G01B11/06 ,  G01N21/956 ,  G01R31/28 ,  H05K3/00 ,  H05K3/06 ,  H05K3/18 ,  H05K3/38 ,  G03F7/00

    CPC分类号： G01B11/0633 ,  G01R31/2805 ,  H05K3/0079 ,  H05K3/385 ,  H05K2203/0315 ,  H05K2203/0392 ,  H05K2203/1157 ,  H05K2203/162

    摘要： The surface of a copper layer in a circuit board is irradiated with a beam, and the degree of progress of oxidation of the surface of the copper layer is determined by taking advantage of the resultant reflected beam (for example, an intensity or a hue of a reflected beam). Then, the step of coating a resist is carried out only when the thickness of the copper oxide film is not more than about 10 nm. Alternatively, the step of coating a resist may be carried out after removal or reduction of the oxide film or cladding of the oxide film with copper.The present invention enables occurrence of peeling of the resist or dive of plating to be prevented in the step of effecting selective etching or plating of a copper layer in a circuit board using a resist pattern as a mask.

    摘要翻译： 用光束照射电路板中的铜层的表面，并且通过利用所得到的反射光束（例如，强度或色调的强度或色调来确定铜层的表面的氧化进程的程度） 反射光束）。 然后，只有当氧化铜膜的厚度不大于约10nm时，才进行涂覆抗蚀剂的步骤。 或者，涂布抗蚀剂的步骤可以在用铜去除或还原氧化膜或氧化膜的包层之后进行。 在使用抗蚀剂图案作为掩模的电路板中进行铜层的选择性蚀刻或镀覆的步骤中，本发明能够防止抗蚀剂的剥离或电镀的潜在的发生。

    Biodegradable resin composition, filler therefor and molded article thereof
    47.
    发明授权
    Biodegradable resin composition, filler therefor and molded article thereof 有权
    可生物降解树脂组合物及其成型品

    公开(公告)号：US07202289B2

    公开(公告)日：2007-04-10

    申请号：US10629611

    申请日：2003-07-30

    申请人： Koji Nozaki ,  Takahisa Namiki

    发明人： Koji Nozaki ,  Takahisa Namiki

    IPC分类号： C08K9/10

    CPC分类号： C08K9/08

    摘要： The present invention is a biodegradable resin composition having excellent physical properties such as strength, water-resistance, molding workability, thermal-resistance, and suitable for a molded article for various electric products. The biodegradable resin composition of the present invention contains a biodegradable resin and filler coated with a biodegradable coating resin in which the filler coated with the biodegradable coating resin is contained within the biodegradable resin. Preferable aspects are such as an aspect that the filler is at least one of mica, talc and montmorillonite, an aspect that a filler content of the biodegradable resin is in the range of 5 mass % to 50 mass %, an aspect that an average diameter of the filler is in the range of 0.01 μm to 200 μm, and an aspect that the biodegradable resin is polylactic acid.

    摘要翻译： 本发明是具有强度，耐水性，成型加工性，耐热性等优异的物性的生物降解性树脂组合物，适用于各种电子产品的成形品。 本发明的生物降解性树脂组合物含有可生物降解的树脂和填充有可生物降解的涂料树脂的填料，其中涂布有可生物降解的涂料树脂的填料包含在生物降解性树脂内。 优选的方面是填充剂是云母，滑石和蒙脱石中的至少一种，生物降解性树脂的填料含量在5质量％〜50质量％的范围内，其平均直径 的填料在0.01〜200μm的范围内，生物降解性树脂是聚乳酸的一个方面。

    Semiconductor device having a pillar structure
    49.
    发明授权
    Semiconductor device having a pillar structure 有权
    具有柱结构的半导体器件

    公开(公告)号：US07642650B2

    公开(公告)日：2010-01-05

    申请号：US10780701

    申请日：2004-02-19

    申请人： Iwao Sugiura ,  Takahisa Namiki ,  Yoshihiro Matsuoka

    发明人： Iwao Sugiura ,  Takahisa Namiki ,  Yoshihiro Matsuoka

    IPC分类号： H01L23/52

    CPC分类号： H01L23/53295 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A semiconductor device includes a first multilayer interconnection structure formed on a substrate and a second multilayer interconnection structure formed on the first multilayer interconnection structure, wherein the first multilayer interconnection structure includes a pillar extending from a surface of the substrate and reaching at least the second multilayer interconnection structure.

    摘要翻译： 半导体器件包括形成在衬底上的第一多层互连结构和形成在第一多层互连结构上的第二多层互连结构，其中第一多层互连结构包括从衬底的表面延伸并至少达到第二多层互连结构的第二多层互连结构 互连结构。

    Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
    50.
    发明授权
    Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof 失效
    聚硅氧烷基硅氧烷，其制造方法以及由其形成的抗蚀剂材料和半导体器件

    公开(公告)号：US5484687A

    公开(公告)日：1996-01-16

    申请号：US98877

    申请日：1993-07-29

    申请人： Keiji Watanabe ,  Akira Oikawa ,  Shun-ichi Fukuyama ,  Masaaki Yamagami ,  Takahisa Namiki

    发明人： Keiji Watanabe ,  Akira Oikawa ,  Shun-ichi Fukuyama ,  Masaaki Yamagami ,  Takahisa Namiki

    IPC分类号： C08G77/52 ,  G03F7/075 ,  G03F7/26 ,  G03C5/16

    CPC分类号： G03F7/0757 ,  C08G77/52 ,  Y10S430/143 ,  Y10S430/168 ,  Y10S438/948

    摘要： Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.

    摘要翻译： 具有由三有机甲硅烷基包围的硅烷基硅氧烷核心的三维网状结构的新型聚硅氧烷硅氧烷，其具有对电离辐射如深紫外线，电子束和X射线的高灵敏度，高软化点在400℃以上， 并且具有良好的耐等离子体蚀刻性，并且具有高对比度和低溶胀度。 这些多苯基硅氧烷可用作抗蚀剂材料，特别是双层抗蚀剂体系的顶层抗蚀剂和层间电介质或耐热保护层。 抗蚀剂材料由于对比度高，溶胀低，耐热性高而具有高分辨率。