公开(公告)号：US08552890B2

公开(公告)日：2013-10-08

申请号：US13444710

申请日：2012-04-11

申请人： Seung-Hwan Kim ,  Christopher Andrew Segall

发明人： Seung-Hwan Kim ,  Christopher Andrew Segall

IPC分类号： H03M7/34

CPC分类号： H03M7/4018 ,  H04N19/12 ,  H04N19/13 ,  H04N19/136 ,  H04N19/146 ,  H04N19/176 ,  H04N19/18 ,  H04N19/61 ,  H04N19/70

摘要： A system utilizing a high throughput lossless coding mode for CABAC in HEVC is described. The system may include an electronic device configured to obtain a block of data to be encoded using an arithmetic based encoder; determine whether the block of data is to be encoded using lossless encoding; in response to determining that the block of data is not to be encoded using lossless encoding, use a first Absolute-3 coding technique to encode the block of data; in response to determining that the block of data is to be encoded using lossless encoding, use a second Absolute-3 coding technique to encode the block of data; wherein the second Absolute-3 coding technique is different than the first Absolute-3 coding technique.

摘要翻译： 描述了在HEVC中利用CABAC的高吞吐量无损编码模式的系统。 该系统可以包括被配置为使用基于算术的编码器来获得要编码的数据块的电子设备; 确定数据块是否使用无损编码进行编码; 响应于确定数据块不使用无损编码进行编码，使用第一绝对3编码技术对数据块进行编码; 响应于确定要使用无损编码对数据块进行编码，使用第二绝对3编码技术对数据块进行编码; 其中第二绝对3编码技术不同于第一绝对3编码技术。

公开(公告)号：US20130114684A1

公开(公告)日：2013-05-09

申请号：US13290998

申请日：2011-11-07

申请人： Seung-Hwan Kim ,  Christopher A. Segall

发明人： Seung-Hwan Kim ,  Christopher A. Segall

IPC分类号： H04N7/30

CPC分类号： H04N19/93 ,  H04N19/127 ,  H04N19/146 ,  H04N19/159 ,  H04N19/176

摘要： An electronic device configured for selective run-level coding (SRLC) is described. The electronic device includes a processor and instructions stored in memory that is in electronic communication with the processor. The electronic device obtains a block of transformed and quantized coefficients (TQCs). The electronic device also determines whether to skip run-level coding. The electronic device further level codes any remaining TQCs if it is determined to skip run-level coding. The electronic device additionally run-level codes one or more TQCs if it is determined not to skip run-level coding and level codes any remaining TQCs if it is determined not to skip run-level coding.

摘要翻译： 描述了配置用于选择性运行级编码（SRLC）的电子设备。 电子设备包括处理器和存储在与处理器电子通信的存储器中的指令。 电子设备获得一组经变换和量化的系数（TQC）。 电子设备还确定是否跳过运行级编码。 如果确定跳过运行级编码，则电子设备进一步对任何剩余的TQC进行编码。 如果确定不跳过运行级编码，则如果确定不跳过运行级编码和级别代码，则电子设备附加运行级编码一个或多个TQC。

公开(公告)号：US08264656B2

公开(公告)日：2012-09-11

申请号：US12507494

申请日：2009-07-22

申请人： Sang-Kueon Lee ,  Kweon-Sam Hong ,  Hyun Park ,  Seung-Hwan Kim

发明人： Sang-Kueon Lee ,  Kweon-Sam Hong ,  Hyun Park ,  Seung-Hwan Kim

IPC分类号： G02F1/136 ,  G02F1/1343

CPC分类号： G02F1/1341 ,  G02F1/13458 ,  G02F1/136227

摘要： A liquid crystal display (LCD) includes a first substrate including a display area displaying images and a peripheral area surrounding the display area, a common pad formed in the peripheral area of the first substrate, an insulating layer formed on the common pad and having a common contact hole exposing the common pad, an assistance common pad formed on the insulating layer of the peripheral area and contacting the common pad through the common contact hole, a second substrate corresponding to the first substrate, and a common electrode formed on the second substrate, and a conductive sealant disposed between the assistance common pad and the common electrode of the peripheral area, the conductive sealant electrically connecting the assistance common pad and the common electrode, wherein the common contact hole is disposed between the conductive sealant and the display area.

摘要翻译： 液晶显示器（LCD）包括：第一基板，包括显示图像的显示区域和围绕显示区域的周边区域;形成在第一基板的外围区域中的公共焊盘;形成在公共焊盘上的绝缘层， 公共接触孔露出公共焊盘，辅助公共焊盘形成在周边区域的绝缘层上并通过公共接触孔接触公共焊盘，对应于第一基板的第二基板和形成在第二基板上的公共电极 以及设置在辅助公共焊盘和周边区域的公共电极之间的导电密封剂，导电密封剂电连接辅助公共焊盘和公共电极，其中公共接触孔设置在导电密封剂和显示区域之间。

公开(公告)号：US20100134745A1

公开(公告)日：2010-06-03

申请号：US12507494

申请日：2009-07-22

申请人： Sang-Kueon Lee ,  Kweon-Sam Hong ,  Hyun Park ,  Seung-Hwan Kim

发明人： Sang-Kueon Lee ,  Kweon-Sam Hong ,  Hyun Park ,  Seung-Hwan Kim

IPC分类号： G02F1/1339

CPC分类号： G02F1/1341 ,  G02F1/13458 ,  G02F1/136227

摘要： A liquid crystal display (LCD) includes a first substrate including a display area displaying images and a peripheral area surrounding the display area, a common pad formed in the peripheral area of the first substrate, an insulating layer formed on the common pad and having a common contact hole exposing the common pad, an assistance common pad formed on the insulating layer of the peripheral area and contacting the common pad through the common contact hole, a second substrate corresponding to the first substrate, and a common electrode formed on the second substrate, and a conductive sealant disposed between the assistance common pad and the common electrode of the peripheral area, the conductive sealant electrically connecting the assistance common pad and the common electrode, wherein the common contact hole is disposed between the conductive sealant and the display area.

摘要翻译： 液晶显示器（LCD）包括：第一基板，包括显示图像的显示区域和围绕显示区域的周边区域;形成在第一基板的外围区域中的公共焊盘;形成在公共焊盘上的绝缘层， 公共接触孔露出公共焊盘，辅助公共焊盘形成在周边区域的绝缘层上并通过公共接触孔接触公共焊盘，对应于第一基板的第二基板和形成在第二基板上的公共电极 以及设置在辅助公共焊盘和周边区域的公共电极之间的导电密封剂，导电密封剂电连接辅助公共焊盘和公共电极，其中公共接触孔设置在导电密封剂和显示区域之间。

公开(公告)号：US20070037368A1

公开(公告)日：2007-02-15

申请号：US11501567

申请日：2006-08-09

申请人： Seung-Hwan Kim

发明人： Seung-Hwan Kim

IPC分类号： H01L21/22 ,  H01L21/38

CPC分类号： H01L21/2652 ,  H01L21/2658 ,  H01L21/761 ,  H01L21/76237 ,  H01L21/823493 ,  H01L29/78

摘要： A method of fabricating a semiconductor device includes a processing step of high-energy ion implantation. After performing the high-energy ion implantation process and before beginning a thermal process, a buffer layer is partially removed together with particles or contaminants that may be generated from the ion implantation process. Surface defects on a semiconductor substrate are prevented from occurring by diffusion of the contaminants during the thermal process.

摘要翻译： 制造半导体器件的方法包括高能离子注入的处理步骤。 在执行高能离子注入工艺之后并且在开始热处理之前，缓冲层与可以从离子注入工艺产生的颗粒或污染物一起被部分地除去。 通过在热处理期间污染物的扩散来防止半导体衬底上的表面缺陷发生。

公开(公告)号：US06999012B2

公开(公告)日：2006-02-14

申请号：US10912664

申请日：2004-08-05

申请人： Seung-Hwan Kim ,  Hyung-Weon Park

发明人： Seung-Hwan Kim ,  Hyung-Weon Park

IPC分类号： H03M1/06

CPC分类号： H03M1/0621 ,  H03G3/3068 ,  H03M1/185

摘要： A temperature compensation device for an automatic gain control loop in a receiver of a mobile communication terminal is disclosed. The temperature compensation device comprises a thermistor having a resistance varying with temperature to vary its output voltage, an analog/digital converter for converting the output voltage from the thermistor into a digital signal, and a temperature compensator for outputting a temperature compensation value in response to a digital signal based on a specific temperature variation from the analog/digital converter.

摘要翻译： 公开了一种用于移动通信终端的接收机中的自动增益控制环路的温度补偿装置。 温度补偿装置包括具有随温度变化的电阻以改变其输出电压的热敏电阻，用于将来自热敏电阻的输出电压转换为数字信号的模拟/数字转换器，以及用于响应于温度补偿值输出温度补偿值的温度补偿器 基于来自模拟/数字转换器的特定温度变化的数字信号。

公开(公告)号：US20050073450A1

公开(公告)日：2005-04-07

申请号：US10912664

申请日：2004-08-05

申请人： Seung-Hwan Kim ,  Hyung-Weon Park

发明人： Seung-Hwan Kim ,  Hyung-Weon Park

IPC分类号： H04B1/40 ,  H03G3/30 ,  H03M1/06 ,  H03M1/18

CPC分类号： H03M1/0621 ,  H03G3/3068 ,  H03M1/185

摘要： A temperature compensation device for an automatic gain control loop in a receiver of a mobile communication terminal is disclosed. The temperature compensation device comprises a thermistor having a resistance varying with temperature to vary its output voltage, an analog/digital converter for converting the output voltage from the thermistor into a digital signal, and a temperature compensator for outputting a temperature compensation value in response to a digital signal based on a specific temperature variation from the analog/digital converter.

摘要翻译： 公开了一种用于移动通信终端的接收机中的自动增益控制环路的温度补偿装置。 温度补偿装置包括具有随温度变化的电阻以改变其输出电压的热敏电阻，用于将来自热敏电阻的输出电压转换为数字信号的模拟/数字转换器，以及用于输出温度补偿值以响应于 基于来自模拟/数字转换器的特定温度变化的数字信号。

公开(公告)号：US06383379B1

公开(公告)日：2002-05-07

申请号：US09529071

申请日：2000-06-19

申请人： Ki-Seung Choi ,  Jin-Man Kim ,  Myung-Ho Cho ,  Seung-Hwan Kim ,  Jeong-Ho Park

发明人： Ki-Seung Choi ,  Jin-Man Kim ,  Myung-Ho Cho ,  Seung-Hwan Kim ,  Jeong-Ho Park

IPC分类号： B01D100

CPC分类号： C02F3/34 ,  C02F3/12 ,  C02F3/348 ,  C12N1/20 ,  C12N1/26 ,  Y02W10/15

摘要： A method of preparing a microbial culture for wastewater treatment comprising the steps of supplying an aerated material derived from an aeration tank (13) to a bioreactor (17) and cultivating a microorganism existing in the aerated material by adding a culture having a relatively long preservation time and a large number of effective microorganisms.

摘要翻译： 一种制备用于废水处理的微生物培养物的方法，包括以下步骤：将来自曝气池（13）的充气材料供应到生物反应器（17），并通过添加具有较长保存性的培养物培养存在于充气材料中的微生物 时间和大量有效的微生物。

公开(公告)号：US06376680B1

公开(公告)日：2002-04-23

申请号：US09866009

申请日：2001-05-24

申请人： Jin-Man Kim ,  Jin-Soo Lim ,  Seung-Hwan Kim ,  Soon-Jong Hahn

发明人： Jin-Man Kim ,  Jin-Soo Lim ,  Seung-Hwan Kim ,  Soon-Jong Hahn

IPC分类号： C07D27503

CPC分类号： C07D275/03 ,  A01N43/80 ,  A23L3/3526 ,  A23L3/3544 ,  A61K8/046 ,  A61K8/49 ,  A61K8/8147 ,  A61K8/8152 ,  A61K8/8182 ,  A61Q5/06 ,  A01N2300/00

摘要： An impurity-free biologically active mixture of 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one, which is useful as a biocide in various products, can be prepared by reacting N-methyl-3-mercaptopropionamide or N,N′-dimethyl-3,3′-dithiodipropionamide or a mixture thereof dissolved in a first organic solvent with sulfuryl chloride dissolved in a second organic solvent, which is different from the first organic solvent, at a temperature ranging from 5 to 20° C. and, optionally, centrifuging the resulting product mixture to obtain the desired mixture substantially free of 4,5-dichloro-2-methyl-4-isothiazolin-3-one impurity.

摘要翻译： 可用作各种产品中的杀生物剂的2-甲基-4-异噻唑啉-3-酮和5-氯-2-甲基-4-异噻唑啉-3-酮的无杂质生物活性混合物可以通过 使N-甲基-3-巯基丙酰胺或N，N'-二甲基-3,3'-二硫代二丙酰胺或其溶解在第一有机溶剂中的混合物与溶于第二有机溶剂中的磺酰氯反应，该第二有机溶剂与第一有机溶剂 ，在5至20℃的温度下，并且任选地将所得产物混合物离心以获得基本上不含4,5-二氯-2-甲基-4-异噻唑啉-3-酮杂质的所需混合物。