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公开(公告)号:US06303523B1
公开(公告)日:2001-10-16
申请号:US09185555
申请日:1998-11-04
申请人: David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人: David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号: C23C16505
摘要: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
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公开(公告)号:US5872064A
公开(公告)日:1999-02-16
申请号:US891268
申请日:1997-07-10
申请人: Brett E. Huff , Farhad Moghadam
发明人: Brett E. Huff , Farhad Moghadam
IPC分类号: H01L21/316 , H01L21/768 , H01L23/532 , H01L23/45
CPC分类号: H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/0234 , H01L21/31612 , H01L21/76826 , H01L21/76834 , H01L21/76837 , H01L23/5329 , H01L2924/0002
摘要: A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched.
摘要翻译: 沉积层间电介质的方法。 使用等离子体增强化学气相沉积(CVD)的第一层被沉积。 之后是使用次大气CVD沉积的第二层。 第二层是氩溅射蚀刻。
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