公开(公告)号：US20150318468A1

公开(公告)日：2015-11-05

申请号：US14266415

申请日：2014-04-30

Applicant: Micron Technology, Inc.

Inventor： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165 ,  H01L45/1675

Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

Abstract translation: 已经公开了用于制造存储器件的存储器件和方法。 一种这样的方法包括从多个元件形成存储器堆叠。 在存储器堆叠的至少一个侧壁上形成粘附物质，其中粘附物质具有梯度结构，其导致粘附物质与存储器堆叠的元件混合以终止元件的不满足的原子键。 梯度结构还包括在至少一个侧壁的外表面上的粘附物质的膜。 将电介质材料注入到粘附物质的膜中以形成侧壁衬里。