摘要:
A level shift circuit includes: a first and a second output transistor outputting voltages derived from a first and a second power source voltage, respectively; a first and a second input transistor outputting, based on a first input pulse signal, a first voltage for turning ON the first output transistor and a second voltage for turning OFF the second output transistor, respectively; a third and a fourth input transistor outputting, based on a second input pulse signal, a third voltage for turning OFF the first output transistor and a fourth voltage for turning ON the second output transistor, respectively; a first bootstrap circuit enlarging an amplitude of the first voltage and supplying the same to the first output transistor; and a first voltage compensation circuit, based on a third input pulse signal, making, at an end timing of the first input pulse signal, a voltage change in a direction opposite to that of a voltage fluctuation caused in the first voltage due to a parasitic capacitance in the first input transistor.
摘要:
Disclosed herein is a display device, including display elements two-dimensionally disposed in a matrix; scanning lines, initialization control lines, and display control lines extending in a first direction; data lines extending in a second direction different from the first direction; and a scanning drive circuit.
摘要:
Disclosed herein is a driving method for driving a display apparatus, the display apparatus including: N×M light emitting units; M scan lines; N data lines; a driving circuit provided for each of the light emitting units to serve as a circuit having a signal writing transistor, a device driving transistor, a capacitor and a first switch circuit; and a light emitting device.
摘要:
A level shift circuit, a shift register, and a display device in which circuit operation is resistant to influence of variations in characteristics of elements such as transistors. The level shift circuit, includes a first switch turning on or off in accordance with a voltage of a first node, switching ON and OFF when the voltage is a first threshold value, and outputting a first voltage when ON state; a second switch turning on or off in accordance with the voltage of a second node, switching ON and OFF when the voltage is a second threshold value, and outputting a second voltage when ON state; a first capacitor receiving a first input signal at one terminal and connected at the other terminal to the first node; a second capacitor receiving a second input signal at one terminal, and connected at the other terminal to the second node; and a circuit for setting the voltage of the first node at the first threshold value and setting the voltage of the second node at the second threshold value in a predetermined period and setting the first node and the second node in a floating state after the predetermined period.
摘要:
Disclosed herein is a driving method and display apparatus, the display apparatus including light emitting units, scan lines, data lines, a driving circuit provided for each of the light emitting units to serve as a circuit having a signal writing transistor, a device driving transistor, a capacitor and a first switch circuit, and a light emitting device.
摘要:
A scan driving circuit and a display device, the display device including display elements two-dimensionally disposed in a matrix; scanning lines, initialization control lines, and display control lines extending in a first direction; and data lines extending in a second direction different from the first direction. The scan driving circuit includes a shift register portion and a logic circuit portion, and generates scan signals and initialization signals, both based on two or more enable signals, and control signals. The scan driving circuit is configured such that changing the width of a start pulse (and thereby the ratio of a light emitting period to a non-light emitting period) does not affect the scan signals or the initialization signals.
摘要:
Disclosed herein is a sampling transistor in an embodiment of the present invention is kept at the on-state with a time width shorter than one horizontal cycle, during the period from the rising of a control pulse supplied from a scanner to a scan line WS to the falling of the control pulse, and samples a video signal from a signal line SL to write the video signal to a hold capacitor. The sampling transistor includes the channel region between the source and the drain and has a sandwich gate structure in which a shield that electrically shields the channel region is disposed on the other side of the channel region. This suppresses change in the threshold voltage of the sampling transistor.
摘要:
A single-channel thin-film transistor buffer includes a first output stage including first and second thin-film transistors connected in series, a seventh thin-film transistor having one main electrode connected to a control electrode of the first thin-film transistor (first control line), the other main electrode connected to a power source of the second thin-film transistor, and a control electrode connected to a second control line, an eighth thin-film transistor having one main electrode connected to a control electrode of the second thin-film transistor (second control line), the other main electrode connected to the power source of the second thin-film transistor, and a control electrode connected to the first control line, and an eleventh thin-film transistor having a control electrode connected to an output terminal of a second output stage connected in parallel with the first output stage and one main electrode connected to the first control line.
摘要:
Disclosed herein is a sampling transistor in an embodiment of the present invention is kept at the on-state with a time width shorter than one horizontal cycle, during the period from the rising of a control pulse supplied from a scanner to a scan line WS to the falling of the control pulse, and samples a video signal from a signal line SL to write the video signal to a hold capacitor. The sampling transistor includes the channel region between the source and the drain and has a sandwich gate structure in which a shield that electrically shields the channel region is disposed on the other side of the channel region. This suppresses change in the threshold voltage of the sampling transistor.
摘要:
A semiconductor device, includes a plurality of thin film transistors of a single channel formed on an insulating substrate, and a buffer circuit including: an outputting stage; a first inputting stage; a second inputting stage; a second outputting stage; and a ninth thin film transistor.