公开(公告)号：US20220109411A1

公开(公告)日：2022-04-07

申请号：US17490798

申请日：2021-09-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shunji YOSHIMI ,  Yuji TAKEMATSU ,  Yukiya YAMAGUCHI ,  Takanori UEJIMA ,  Satoshi GOTO ,  Satoshi ARAYASHIKI

IPC: H03F3/21 ,  H01L25/065 ,  H01L23/538 ,  H01L29/737 ,  H01L23/522

Abstract: A semiconductor devices comprises a first member including a first circuit partially formed by an elemental semiconductor element at a surface layer, a first conductive raised portion at the first member, and a second member smaller than the first member in plan view joined to the first member. The second member includes a second circuit partially formed by a compound semiconductor element. A second conductive raised portion is at the second member. A power amplifier includes a first-stage amplifier circuit included in the first or second circuit and a second-stage amplifier circuit included in the second circuit. The first circuit includes a first switch for inputting to the first-stage amplifier circuit a radio-frequency signal inputted to a selected contact, a control circuit to control the first- and second-stage amplifier circuits, and a second switch for outputting from a selected contact a radio-frequency signal outputted by the second-stage amplifier circuit.

公开(公告)号：US20210211106A1

公开(公告)日：2021-07-08

申请号：US17211072

申请日：2021-03-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi ARAYASHIKI ,  Satoshi GOTO ,  Satoshi TANAKA ,  Yasuhisa YAMAMOTO

IPC: H03F3/21 ,  H03F1/02 ,  H03F3/193

Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

公开(公告)号：US20210035922A1

公开(公告)日：2021-02-04

申请号：US16943243

申请日：2020-07-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroaki TOKUYA ,  Masahiro SHIBATA ,  Akihiko OZAKI ,  Satoshi GOTO ,  Fumio HARIMA ,  Atsushi KUROKAWA

IPC: H01L23/00 ,  H01L29/737 ,  H01L27/082 ,  H01L23/498 ,  H01L23/66

Abstract: At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.

公开(公告)号：US20210013165A1

公开(公告)日：2021-01-14

申请号：US17038895

申请日：2020-09-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hisanori NAMIE ,  Satoshi GOTO ,  Satoshi TANAKA

IPC: H01L23/66 ,  H01L23/00 ,  H03F3/195 ,  H03F1/56 ,  H03F3/213 ,  H01L27/06 ,  H01L29/735

Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

公开(公告)号：US20190109565A1

公开(公告)日：2019-04-11

申请号：US16154861

申请日：2018-10-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hisanori NAMIE ,  Satoshi GOTO ,  Satoshi TANAKA

IPC: H03F1/02 ,  H03F1/52 ,  H03F1/56 ,  H03F3/21

CPC classification number: H03F1/0222 ,  H03F1/0261 ,  H03F1/52 ,  H03F1/56 ,  H03F1/565 ,  H03F3/191 ,  H03F3/21 ,  H03F3/245 ,  H03F2200/411 ,  H03F2200/516

Abstract: A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.