Efficient Gallium Thin Film Electroplating Methods and Chemistries
    41.
    发明申请
    Efficient Gallium Thin Film Electroplating Methods and Chemistries 失效
    高效镓薄膜电镀方法与化学

    公开(公告)号:US20070272558A1

    公开(公告)日:2007-11-29

    申请号:US11535927

    申请日:2006-09-27

    IPC分类号: C25D3/02 C25D3/56

    摘要: The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

    摘要翻译: 本发明涉及镓(Ga)电镀方法和化学镀以均匀,无缺陷和光滑的Ga膜,具有高电镀效率和重复性。 这样的层可以用于制造诸如薄膜太阳能电池的电子器件。 在一个实施方案中,本发明提供了一种用于在导体上施加的解决方案,该解决方案在将溶液电沉积在导体上时有助于包括Ga盐,络合剂,溶剂和具有亚微米厚度的Ga膜。 该溶液还可包括Cu盐和In盐中的一种或两种。

    SELENIUM CONTAINING ELECTRODEPOSITION SOLUTION AND METHODS
    42.
    发明申请
    SELENIUM CONTAINING ELECTRODEPOSITION SOLUTION AND METHODS 审中-公开
    含有电沉积溶液的硒和方法

    公开(公告)号:US20100140098A1

    公开(公告)日:2010-06-10

    申请号:US12642691

    申请日:2009-12-18

    IPC分类号: C25D5/18 C25D3/38 C25D9/04

    摘要: The present inventions relate to selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions.

    摘要翻译: 本发明涉及用于制造太阳能电池吸收层的含硒电沉积溶液。 在一个方面描述了电沉积包含溶剂的IB族VIA薄膜的电沉积溶液; IB类材料来源; 一组VIA材料来源; 以及形成IB族材料的复合离子的至少一种络合物。 还描述了使用电沉积溶液的电镀方法。