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公开(公告)号：US20240344226A1
公开(公告)日：2024-10-17
申请号：US18411467
申请日：2024-01-12
Applicant: Stamford Devices Limited
Inventor： Hong XU
IPC: C25D7/00 , A61M11/00 , B05B17/00 , B41J2/16 , C25D1/00 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/54 , C25D5/00 , C25D5/02 , C25D5/10 , C25D5/34 , C25D5/48 , C25D5/54
CPC classification number: C25D7/00 , A61M11/005 , B05B17/0646 , B41J2/162 , B41J2/1625 , B41J2/1629 , B41J2/1631 , C25D1/003 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/54 , C25D5/022 , C25D5/10 , C25D5/34 , C25D5/48 , C25D5/54 , C25D5/611
Abstract: In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.
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2.发明公开公开(公告)号：US20240295037A1
公开(公告)日：2024-09-05
申请号：US18174036
申请日：2023-02-24
Applicant: City University of Hong Kong
Inventor： Ruiqin Zhang , Haipeng Wang
IPC: C25B11/053 , C25B1/04 , C25B9/50 , C25B11/077 , C25D3/54 , C25D5/10 , C25D5/50 , C25D7/12
CPC classification number: C25B11/053 , C25B1/04 , C25B9/50 , C25B11/077 , C25D3/54 , C25D5/10 , C25D5/50 , C25D7/12
Abstract: A photoelectrode includes a double-layer homojunction of metal oxide semiconductor films without heteroatoms incorporated. The metal oxide semiconductor films are uniform in large size with rich oxygen vacancies. For BiVO4 films, Bi precursor can be electrodeposited on a substrate under atmospheric pressure and air atmosphere. The electrolytes for electrodeposition are acidic or alkaline with controllable pHs. The electrodeposited substrate is transferred to the muffle furnace for thermal evaporation with V precursor. Film thickness and size can be controlled by electrodeposition parameters. The BiVO4 double-layer homojunction is a safer and cheaper material in photo-driven devices, hydrogen producers, and solar cells, and is an economical replacement of costly III-V compounds, polymers, and valuable fossil. The BiVO4 double-layer homojunction can also be employed as photoelectrodes for H2 production via photoelectrochemical (PEC) water splitting under solar light, which can provide pivotal reactor materials for hydrogen producers and solar cells.
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3.发明申请公开(公告)号：US20180347058A1
公开(公告)日：2018-12-06
申请号：US15995220
申请日：2018-06-01
Applicant: LumiShield Technologies Incorporated
Inventor： Hunaid B. NULWALA , John D. WATKINS
Abstract: Methods and compositions for electrodepositing mixed metal reactive metal layers by combining reactive metal complexes with electron withdrawing agents are provided. Modifying the ratio of one reactive metal complex to the other and varying the current density can be used to vary the morphology the metal layer on the substrate.
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公开(公告)号：US10069116B2
公开(公告)日：2018-09-04
申请号：US15789584
申请日：2017-10-20
Applicant: International Business Machines Corporation
Inventor： Paul S. Andry , Eric P. Lewandowski , Yu Luo , Adinath S. Narasgond
IPC: H01M2/02 , C25D1/04 , C25D1/22 , C25D5/02 , G02C7/08 , H01M4/38 , H01M4/42 , H01M4/48 , H01M4/50 , H01M4/66 , H01M10/04 , A61B5/145 , C25D3/22 , C25D3/54 , C25D3/56 , C25D5/10 , C25D5/50 , H01M4/139 , H01M4/02
CPC classification number: H01M2/0202 , A61B5/145 , A61B2562/028 , C25D1/04 , C25D1/22 , C25D3/22 , C25D3/54 , C25D3/56 , C25D3/565 , C25D5/02 , C25D5/10 , C25D5/50 , G02C7/083 , H01M4/139 , H01M4/38 , H01M4/42 , H01M4/48 , H01M4/50 , H01M4/661 , H01M4/664 , H01M10/0436 , H01M2002/0205 , H01M2004/027 , H01M2004/028 , Y10T29/49108 , Y10T29/49115
Abstract: A battery comprising an anode comprising anode material in contact with a metal anode current collector. The battery further comprises a cathode comprising cathode material in contact with a cathode current collector comprising a transparent conducting oxide (TCO). The battery further comprises an electrolyte with a pH in a range of 3 to 7.
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公开(公告)号：US20180171497A1
公开(公告)日：2018-06-21
申请号：US15578891
申请日：2016-06-02
Applicant: Seung Kyun RYU , Sook Eun BAEK
Inventor： Seung Kyun RYU , Sook Eun BAEK
CPC classification number: C25D3/12 , C23C18/1834 , C23C18/2006 , C23C18/2066 , C23C18/32 , C23C18/42 , C23C18/48 , C23C18/50 , C25D3/50 , C25D3/54 , H04B1/3888
Abstract: Disclosed herein is a structure for strengthening strength and a method of manufacturing the same, and more particularly to a structure for strengthening strength in which a coating layer made of material containing tungsten is formed on the surface of a base of a base metal or a bass of a metal base. According to the present invention, it is possible to substitute synthetic resins and metal products which are currently manufactured and used, exhibit excellent physical properties and mechanical properties as compared with those of synthetic resins and metal products. And also if necessary, the surface of the metal plating of the structure according to the present invention may be plated with various precious metals such as gold and silver to meet the demand of the customer.
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Patent Agency Ranking
公开(公告)号：US20180163746A1
公开(公告)日：2018-06-14
申请号：US15378740
申请日：2016-12-14
Applicant: United Technologies Corporation
Inventor： Lei Chen , Mark R. Jaworowski
CPC classification number: F04D29/388 , C25D3/54 , C25D3/665 , C25D5/10 , C25D7/00 , F01D5/288 , F02K3/06 , F04D29/023 , F04D29/325 , F05D2220/32 , F05D2230/31 , F05D2230/90 , F05D2260/95 , F05D2300/173 , F05D2300/2112 , Y10T428/12764
Abstract: Disclosed herein is a coated aluminum component which includes an aluminum substrate and a protective material disposed on the substrate wherein the protective material includes a galvanic corrosion protection layer and an impact protection layer. Also disclosed is a method of applying the protective material.
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公开(公告)号：US09995247B2
公开(公告)日：2018-06-12
申请号：US14875897
申请日：2015-10-06
Applicant: SPIRIT AEROSYSTEMS, INC.
Inventor： Rahbar Nasserrafi , Craig Clasper , Micheal A. Walker , Gerald E. Hicks , Linda Cadwell Stancin
IPC: B32B15/00 , C25D7/00 , F02K1/82 , C25D3/04 , C25D3/12 , C25D3/38 , C25D3/54 , C25D3/56 , C25D3/58 , C23C26/00 , F02K1/72
CPC classification number: F02K1/822 , B32B15/00 , B32B2305/024 , C23C4/073 , C23C4/11 , C23C4/129 , C23C4/131 , C23C24/04 , C23C26/00 , C23C28/321 , C23C28/3455 , C25D3/04 , C25D3/12 , C25D3/38 , C25D3/54 , C25D3/56 , C25D3/562 , C25D3/58 , C25D7/00 , F02K1/72 , F05D2230/30 , F05D2230/90 , F05D2300/172 , F05D2300/177 , F05D2300/5024 , F05D2300/603 , Y02T50/672 , Y02T50/675
Abstract: An aircraft thrust reverser inner wall and method of manufacturing the same. The aircraft thrust reverser inner wall may include a face sheet, a perforated back sheet, and a core sandwiched between the face sheet and the perforated back sheet. The face sheet may have an inner face sheet surface and an outer face sheet surface, and the core may have an inner core surface, an outer core surface, and a plurality of cell walls extending therebetween. An electro-depositable material may be applied, via electrodeposition, in a substantially continuous layer over the outer core surface, the cell walls, and the outer face sheet surface, thus bonding the face sheet and core together. The perforated back sheet may be attached to the core at the outer core surface, and a conductive coating may be applied to the inner face sheet surface.
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公开(公告)号：US20170321558A1
公开(公告)日：2017-11-09
申请号：US15149344
申请日：2016-05-09
Applicant: United Technologies Corporation
Inventor： Brendan M. Lenz , Douglas M. Berczik
CPC classification number: F01D5/28 , C25D3/46 , C25D3/48 , C25D3/50 , C25D3/54 , C25D5/10 , C25D5/50 , C25D7/008 , F01D5/288 , F02C3/04 , F05D2220/32 , F05D2300/131 , F05D2300/14 , F05D2300/15 , Y02T50/671
Abstract: An article includes a substrate formed of a molybdenum-based alloy. The molybdenum-based alloy has a composition that includes molybdenum, silicon, and boron. A barrier layer is disposed on the substrate. The barrier layer is formed of at least one noble metal.
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公开(公告)号：US09809892B1
公开(公告)日：2017-11-07
申请号：US15212737
申请日：2016-07-18
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Yi Qin , Kristen Flajslik , Mark Lefebvre
Abstract: Iridium electroplating compositions containing 1,10-phenanthroline compounds in trace amounts to electroplate substantially defect-free uniform and smooth surface morphology indium on metal layers. The indium electroplating compositions can be used to electroplate indium metal on metal layers of various substrates such as semiconductor wafers and as thermal interface materials.
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公开(公告)号：US09719184B2
公开(公告)日：2017-08-01
申请号：US13976628
申请日：2011-12-23
Applicant: Hong Xu
Inventor： Hong Xu
IPC: B05B1/00 , C25D7/00 , B05B17/00 , B41J2/16 , C25D5/02 , C25D5/10 , C25D1/00 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/54 , C25D5/34 , C25D5/48 , C25D5/54
CPC classification number: C25D7/00 , B05B17/0646 , B41J2/162 , B41J2/1625 , B41J2/1629 , B41J2/1631 , C25D1/003 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/54 , C25D5/022 , C25D5/10 , C25D5/34 , C25D5/48 , C25D5/54
Abstract: In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.
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