公开(公告)号：US20220393480A1

公开(公告)日：2022-12-08

申请号：US17820538

申请日：2022-08-17

Applicant: Navitas Semiconductor Limited

Inventor： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC: H02J7/00 ,  H01L23/495 ,  H01L27/02 ,  H01L23/62 ,  H02M1/088 ,  H02M3/158 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H01L23/528 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

公开(公告)号：US20220231606A1

公开(公告)日：2022-07-21

申请号：US17575536

申请日：2022-01-13

Applicant: Navitas Semiconductor Limited

Inventor： Thomas Ribarich ,  Daniel M. Kinzer ,  Tao Liu ,  Marco Giandalia ,  Victor Sinow

IPC: H02M3/158 ,  H02M1/00

Abstract: A circuit is disclosed. The circuit includes a current detecting FET, configured to generate a current signal indicative of the value of the current flowing therethrough, an operational transconductance amplifier (OTA) configured to output a current in response to the voltage of the current signal, and a resistor configured to receive the current and to generate a voltage in response to the received current, where the generated voltage is indicative of the value of the current flowing through the current detecting FET. The current detecting FET is configured to become nonconductive in response to the generated voltage indicating that the current flowing through the current detecting FET is greater than a threshold.

公开(公告)号：US20210143647A1

公开(公告)日：2021-05-13

申请号：US17151285

申请日：2021-01-18

Applicant: NAVITAS SEMICONDUCTOR LIMITED

Inventor： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC: H02J7/00 ,  H01L23/495 ,  H01L27/02 ,  H01L23/62 ,  H02M1/088 ,  H02M3/158 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H01L23/528 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.