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公开(公告)号：US20150255571A1
公开(公告)日：2015-09-10
申请号：US14341568
申请日：2014-07-25
Applicant: QUALCOMM Incorporated
Inventor： Jeffrey Junhao Xu , Kern Rim , John Jianhong Zhu , Stanley Seungchul Song , Mustafa Badaroglu , Vladimir Machkaoutsan , Da Yang , Choh Fei Yeap
CPC classification number: H01L29/6681 , H01L29/4991 , H01L29/6653 , H01L29/66545 , H01L29/66795 , H01L29/785
Abstract: In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.
Abstract translation: 在特定实施例中，一种方法包括在半导体器件的伪栅极上形成第一间隔结构，并在第一间隔物结构上形成牺牲隔离物。 该方法还包括蚀刻半导体器件的结构以形成开口，经由开口去除牺牲隔离物，以及沉积材料以限定间隙。
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公开(公告)号：US20150091060A1
公开(公告)日：2015-04-02
申请号：US14040366
申请日：2013-09-27
Applicant: QUALCOMM Incorporated
Inventor： Bin Yang , PR Chidambaram , John Jianhong Zhu , Jihong Choi , Da Yang , Ravi Mahendra Todi , Giridhar Nallapati , Chock Hing Gan , Ming Cai , Samit Sengupta
IPC: H01L29/66 , H01L29/778
CPC classification number: H01L29/66431 , H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/165 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659 , H01L29/66621 , H01L29/66636 , H01L29/66651 , H01L29/778 , H01L29/7834
Abstract: In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel
Abstract translation: 在特定实施例中，半导体器件包括源极区和漏极区之间的高迁移率沟道。 高迁移率通道基本上延伸了一个门的长度。 半导体器件还包括从源极区域或漏极区域向高迁移率通道延伸的掺杂区域。 衬底的一部分位于掺杂区域和高迁移率通道之间
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