Memory module with dedicated repair devices

    公开(公告)号:US11347608B2

    公开(公告)日:2022-05-31

    申请号:US16670798

    申请日:2019-10-31

    Applicant: Rambus Inc.

    Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

    Coordinating memory operations using memory-device-generated reference signals

    公开(公告)号:US11341067B2

    公开(公告)日:2022-05-24

    申请号:US16987472

    申请日:2020-08-07

    Applicant: Rambus Inc.

    Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

    Buffer circuit with adaptive repair capability

    公开(公告)号:US11069423B2

    公开(公告)日:2021-07-20

    申请号:US16537021

    申请日:2019-08-09

    Applicant: Rambus Inc.

    Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

    MEMORY MODULE WITH DEDICATED REPAIR DEVICES

    公开(公告)号:US20210133061A1

    公开(公告)日:2021-05-06

    申请号:US16670798

    申请日:2019-10-31

    Applicant: Rambus Inc.

    Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

    STROBE-OFFSET CONTROL CIRCUIT
    48.
    发明申请

    公开(公告)号:US20210043243A1

    公开(公告)日:2021-02-11

    申请号:US16940858

    申请日:2020-07-28

    Applicant: Rambus Inc.

    Inventor: Scott C. Best

    Abstract: A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal.

    COORDINATING MEMORY OPERATIONS USING MEMORY-DEVICE-GENERATED REFERENCE SIGNALS

    公开(公告)号:US20210011867A1

    公开(公告)日:2021-01-14

    申请号:US16987472

    申请日:2020-08-07

    Applicant: Rambus Inc.

    Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

    Memory systems, modules, and methods for improved capacity

    公开(公告)号:US10459660B2

    公开(公告)日:2019-10-29

    申请号:US15522164

    申请日:2015-11-04

    Applicant: Rambus Inc.

    Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. The memory module additionally includes a command input port to receive command and address signals from a controller and, also in support of capacity extensions, a command relay circuit coupled to the command port to convey the commands and addresses from the memory module to another module or modules. Relaying commands and addresses introduces a delay, and the buffer system that manages communication between the memory controller and the memory devices can be configured to time data communication to account for that delay.

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