公开(公告)号：US20110006299A1

公开(公告)日：2011-01-13

申请号：US12831454

申请日：2010-07-07

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969

摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

摘要翻译： 公开了一种制造具有栅电极，源电极，漏电极和形成沟道区的有源层的场效应晶体管的方法，所述有源层具有主要包含镁和铟的氧化物半导体。 该方法包括沉积氧化膜的沉积步骤，通过包括蚀刻的工艺对氧化物膜进行图案化以获得有源层的图案化步骤，以及在图案化步骤之后对所获得的有源层进行热处理的热处理步骤。

公开(公告)号：US20120248451A1

公开(公告)日：2012-10-04

申请号：US13515463

申请日：2010-12-22

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/786

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  G02F2001/1635 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3648 ,  H01L27/10873 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/7869 ,  H01L29/7881

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

摘要翻译： 场效应晶体管包括衬底; 形成在基板上的源电极，漏电极和栅电极; 半导体层，当预定的电压施加到栅电极时，通过该半导体层形成在源电极和漏电极之间的沟道; 以及设置在栅极电极和半导体层之间的栅极绝缘层。 栅极绝缘层由包含一种或两种以上碱土金属元素的非晶态复合金属氧化物绝缘膜和除了Ce之外的选自Ga，Sc，Y和镧系元素中的一种或两种以上的元素形成。

公开(公告)号：US08268666B2

公开(公告)日：2012-09-18

申请号：US12831454

申请日：2010-07-07

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969

摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

摘要翻译： 公开了一种制造具有栅电极，源电极，漏电极和形成沟道区的有源层的场效应晶体管的方法，所述有源层具有主要包含镁和铟的氧化物半导体。 该方法包括沉积氧化膜的沉积步骤，通过包括蚀刻的工艺对氧化物膜进行图案化以获得有源层的图案化步骤，以及在图案化步骤之后对所获得的有源层进行热处理的热处理步骤。

公开(公告)号：US08956969B2

公开(公告)日：2015-02-17

申请号：US13372874

申请日：2012-02-14

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Kazuhiro Murata ,  Kazuyuki Masuda

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Kazuhiro Murata ,  Kazuyuki Masuda

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H05K3/46

CPC分类号： H01L21/76802 ,  H05K3/4644 ,  H05K2203/308

摘要： A hole formation method including applying a pillar-forming liquid to a base material, to thereby form a pillar; applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film; removing the pillar to form an opening in the insulating film; and heat treating the insulating film in which the opening has been formed.

摘要翻译： 一种孔形成方法，包括将柱状液体施加到基材上，从而形成支柱; 在形成有柱的基材上涂覆绝缘膜形成材料，从而形成绝缘膜; 移除所述柱以在所述绝缘膜中形成开口; 对形成有开口部的绝缘膜进行热处理。

公开(公告)号：US20130240881A1

公开(公告)日：2013-09-19

申请号：US13989975

申请日：2011-11-22

申请人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone

发明人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66969

摘要： A coating liquid for forming a metal oxide thin film, the coating liquid including: an inorganic indium compound; at least one of an inorganic magnesium compound and an inorganic zinc compound; and a glycol ether.

摘要翻译： 一种用于形成金属氧化物薄膜的涂布液，所述涂布液包括：无机铟化合物; 无机镁化合物和无机锌化合物中的至少一种; 和乙二醇醚。

公开(公告)号：US08492761B2

公开(公告)日：2013-07-23

申请号：US13587744

申请日：2012-08-16

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969

摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

摘要翻译： 公开了一种制造具有栅电极，源电极，漏电极和形成沟道区的有源层的场效应晶体管的方法，所述有源层具有主要包含镁和铟的氧化物半导体。 该方法包括沉积氧化膜的沉积步骤，通过包括蚀刻的工艺对氧化物膜进行图案化以获得有源层的图案化步骤，以及在图案化步骤之后对所获得的有源层进行热处理的热处理步骤。

公开(公告)号：US20180331196A1

公开(公告)日：2018-11-15

申请号：US16029301

申请日：2018-07-06

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/49 ,  H01L29/788 ,  H01L29/786 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/3233 ,  G09G3/20 ,  G02F1/163 ,  H01L27/32 ,  H01L27/108

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  G02F2001/1635 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3648 ,  H01L27/10873 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/7869 ,  H01L29/7881

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

公开(公告)号：US09105473B2

公开(公告)日：2015-08-11

申请号：US13578782

申请日：2011-02-15

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone ,  Yukiko Abe

IPC分类号： H01L29/94 ,  H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC分类号： H01L21/02565 ,  H01L21/02576 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/7869

摘要： A disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source electrode and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and the active layer. In the field effect transistor, the n-type oxide semiconductor is formed of an n-type doped compound having a chemical composition of a crystal phase obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.

摘要翻译： 所公开的场效应晶体管包括施加栅极电压的栅极电极，用于根据栅极电压获取电流的源电极和漏电极，邻近源电极和漏电极设置的有源层， 有源层由n型氧化物半导体形成，栅极绝缘体层设置在栅电极和有源层之间。 在场效应晶体管中，n型氧化物半导体由具有通过引入三价阳离子，四价阳离子，五价阳离子和六价铵中的至少一种而获得的结晶相的化学组成的n型掺杂化合物形成 阳离子。

公开(公告)号：US20120306834A1

公开(公告)日：2012-12-06

申请号：US13578782

申请日：2011-02-15

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone ,  Yukiko Abe

IPC分类号： H01L29/786 ,  G06F3/038 ,  G09G3/20

CPC分类号： H01L21/02565 ,  H01L21/02576 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/7869

摘要： A disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source electrode and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and the active layer. In the field effect transistor, the n-type oxide semiconductor is formed of an n-type doped compound having a chemical composition of a crystal phase obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.

摘要翻译： 所公开的场效应晶体管包括施加栅极电压的栅极电极，用于根据栅极电压获取电流的源电极和漏电极，邻近源电极和漏电极设置的有源层， 有源层由n型氧化物半导体形成，栅极绝缘体层设置在栅电极和有源层之间。 在场效应晶体管中，n型氧化物半导体由具有通过引入三价阳离子，四价阳离子，五价阳离子和六价铵中的至少一种而获得的结晶相的化学组成的n型掺杂化合物形成 阳离子。

公开(公告)号：US20120305915A1

公开(公告)日：2012-12-06

申请号：US13587744

申请日：2012-08-16

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

IPC分类号： H01L29/26

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969

摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

摘要翻译： 公开了一种制造具有栅电极，源电极，漏电极和形成沟道区的有源层的场效应晶体管的方法，所述有源层具有主要包含镁和铟的氧化物半导体。 该方法包括沉积氧化膜的沉积步骤，通过包括蚀刻的工艺对氧化物膜进行图案化以获得有源层的图案化步骤，以及在图案化步骤之后对所获得的有源层进行热处理的热处理步骤。