公开(公告)号：US20170140814A1

公开(公告)日：2017-05-18

申请号：US15354446

申请日：2016-11-17

Applicant: SanDisk Technologies LLC

Inventor： Sarath Puthenthermadam ,  Deepanshu Dutta

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34

CPC classification number: G11C11/5642 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/3427 ,  G11C16/3459

Abstract: A variable compensation pass bias based on a state being sensed in non-volatile memory based is provided. Shifts in the apparent charge stored by a memory cell can occur because of coupling based on charge stored by adjacent cells. To account for the shift, compensations can be applied to an adjacent word line when reading based on the different possible conditions of an adjacent cell. The effects of coupling may be more pronounced for memory cells in lower states corresponding to lower threshold voltages. A compensation pass bias can be reduced as the state being sensed at a selected word line increases to account for the different effects. A compensation pass bias for an adjacent word line may be reduced with the application of larger read reference voltages to a selected word line. Other variations to a compensation pass bias are provided.