公开(公告)号：US11532650B2

公开(公告)日：2022-12-20

申请号：US17030560

申请日：2020-09-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  G02F1/1362 ,  H01L27/12 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/786

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

公开(公告)号：US11450691B2

公开(公告)日：2022-09-20

申请号：US16671223

申请日：2019-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa

IPC: H01L27/12 ,  H01L29/786

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. A semiconductor device includes an oxide semiconductor film, a gate electrode, an insulating film over the gate electrode, the oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film, include the same element. The first oxide semiconductor film includes a region having lower crystallinity than the second oxide semiconductor film.

公开(公告)号：US11430897B2

公开(公告)日：2022-08-30

申请号：US16976232

申请日：2019-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yasutaka Nakazawa

IPC: H01L29/00 ,  G01N23/223 ,  H01L29/786 ,  G01N23/2273 ,  H01L29/04

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The first insulating layer is in contact with part of the top surface of the semiconductor layer, the conductive layer is positioned over the first insulating layer, and the second insulating layer is positioned over the semiconductor layer. The semiconductor layer contains a metal oxide and includes a first region overlapping with the conductive layer and a second region not overlapping with the conductive layer. The second region is in contact with the second insulating layer. The second insulating layer contains oxygen and a first element. The first element is one or more of phosphorus, boron, magnesium, aluminum, and silicon.

公开(公告)号：US11349006B2

公开(公告)日：2022-05-31

申请号：US16966066

申请日：2019-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Kenichi Okazaki ,  Takayuki Ohide ,  Rai Sato

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

公开(公告)号：US11282965B2

公开(公告)日：2022-03-22

申请号：US16959259

申请日：2019-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Takashi Hamochi ,  Takayuki Ohide ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/45 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device is fabricated by a method that includes a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a conductive film over the semiconductor layer, a third step of etching the conductive film such that the conductive film is divided over the semiconductor layer and a portion of the semiconductor layer is uncovered, and a fourth step of performing first treatment on the conductive film and the portion of the semiconductor layer. The conductive film contains copper, silver, gold, or aluminum. The first treatment is plasma treatment in an atmosphere containing a mixed gas of a first gas containing an oxygen element and a second gas containing a hydrogen element.

公开(公告)号：US11152512B2

公开(公告)日：2021-10-19

申请号：US16613147

申请日：2018-05-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yasutaka Nakazawa ,  Toshimitsu Obonai

IPC: H01L27/00 ,  H01L29/00 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics, a semiconductor device with stable electrical characteristics, or a highly reliable semiconductor device or display device is provided. A first insulating layer and a first conductive layer are stacked over a first region of a first metal oxide layer. A first layer is formed in contact with a second metal oxide layer and a second region of the first metal oxide layer that is not overlapped by the first insulating layer. Heat treatment is performed to lower the resistance of the second region and the second metal oxide layer. A second insulating layer is formed. A second conductive layer electrically connected to the second region is formed over the second insulating layer. Here, the first layer is formed to contain at least one of aluminum, titanium, tantalum, and tungsten.

公开(公告)号：US10861980B2

公开(公告)日：2020-12-08

申请号：US16110488

申请日：2018-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Katayama ,  Yasutaka Nakazawa ,  Masatoshi Yokoyama ,  Masahiko Hayakawa ,  Kenichi Okazaki ,  Shunsuke Koshioka

IPC: H01L29/786 ,  G09G3/20 ,  G09G3/36 ,  G09G5/00 ,  H01L27/12 ,  G06F3/041

Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

公开(公告)号：US10790318B2

公开(公告)日：2020-09-29

申请号：US15815985

申请日：2017-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa

IPC: H01L27/12 ,  G02F1/1362 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/786

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

公开(公告)号：US10304859B2

公开(公告)日：2019-05-28

申请号：US14247676

申请日：2014-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yasutaka Nakazawa ,  Yukinori Shima ,  Masami Jintyou ,  Masayuki Sakakura ,  Motoki Nakashima

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

公开(公告)号：US10158008B2

公开(公告)日：2018-12-18

申请号：US15286892

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Yasuharu Hosaka ,  Yasutaka Nakazawa ,  Takashi Hamochi ,  Takahiro Sato ,  Shunpei Yamazaki

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/778 ,  H01L29/40 ,  H01L23/29 ,  H01L21/02 ,  H01L29/49 ,  H01L29/24 ,  H01L21/383 ,  H01L23/31

Abstract: A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.