公开(公告)号：US11327376B2

公开(公告)日：2022-05-10

申请号：US17366474

申请日：2021-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US09097925B2

公开(公告)日：2015-08-04

申请号：US13942468

申请日：2013-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1333 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/7869

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract translation: 为了抑制由于来自有机绝缘膜的释放气体导致的晶体管的特性的变化，使得显示装置的可靠性增加。 显示装置包括晶体管，设置在晶体管上方的有机绝缘膜，以减少由于晶体管引起的不均匀性以及有机绝缘膜上的电容器。 有机绝缘膜的整个表面没有被电容器的部件（透明导电层和无机绝缘膜）覆盖，并且来自有机绝缘膜的释放气体可以从上表面的暴露部分释放到外部 的有机绝缘膜。

公开(公告)号：US11137651B2

公开(公告)日：2021-10-05

申请号：US17082094

申请日：2020-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US10018887B2

公开(公告)日：2018-07-10

申请号：US15144916

申请日：2016-05-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1343 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/04 ,  H01L29/423 ,  H01L29/786 ,  H01L29/24

CPC classification number: G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US12117704B2

公开(公告)日：2024-10-15

申请号：US18527464

申请日：2023-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

CPC classification number: G02F1/136227 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136277 ,  G02F1/134372 ,  G02F2202/02 ,  G02F2202/10

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US08937305B2

公开(公告)日：2015-01-20

申请号：US13652686

申请日：2012-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Cho ,  Shunsuke Koshioka ,  Masatoshi Yokoyama ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.

Abstract translation: 为了提供一种高可靠性的半导体器件，其包括具有氧化物半导体的晶体管，在包括设置在玻璃基板上的具有底栅结构的交错晶体管的半导体器件中，栅极绝缘膜，其中第一栅极绝缘膜和第二栅极绝缘膜 栅极绝缘膜的组成彼此不同，按栅极电极层设置。 或者，在具有底栅结构的交错晶体管中，在玻璃基板和栅电极层之间设置保护绝缘膜。 包含在玻璃基板中的金属元素在第一栅极绝缘膜和第二栅极绝缘膜之间的界面处或者栅极电极层和栅极绝缘膜之间的界面处具有低于或等于5×1018原子/ cm3的浓度 。

公开(公告)号：US11543718B2

公开(公告)日：2023-01-03

申请号：US17580742

申请日：2022-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US10852576B2

公开(公告)日：2020-12-01

申请号：US16583817

申请日：2019-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1362

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US10437091B2

公开(公告)日：2019-10-08

申请号：US16026227

申请日：2018-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1362

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US09366894B2

公开(公告)日：2016-06-14

申请号：US14746885

申请日：2015-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/423 ,  H01L29/786

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/7869

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.