公开(公告)号：US12101967B2

公开(公告)日：2024-09-24

申请号：US17471849

申请日：2021-09-10

Applicant: Samsung Display Co., Ltd.

Inventor： Keunwoo Kim ,  Meejae Kang ,  Thanh Tien Nguyen ,  Hyena Kwak ,  Jaehwan Chu

IPC: H10K59/121 ,  H10K59/124 ,  H10K59/131

CPC classification number: H10K59/1216 ,  H10K59/124 ,  H10K59/131

Abstract: A display device may include a substrate, a first transistor disposed on the substrate and including a first gate electrode, a first conductive pattern disposed on the first gate electrode such that the first conductive pattern and the first gate electrode constitute a first capacitor, a second conductive pattern disposed on the first capacitor, a third conductive pattern disposed on the second conductive pattern such that the third conductive pattern and the second conductive pattern constitute a second capacitor, and a light emitting structure disposed on the second capacitor.

公开(公告)号：US12094413B2

公开(公告)日：2024-09-17

申请号：US18311806

申请日：2023-05-03

Applicant: Samsung Display Co., LTD.

Inventor： Keunwoo Kim

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/061 ,  G09G2310/08

Abstract: A pixel according to one or more embodiments of the present disclosure may include a transistor including a gate terminal connected to a first node, a first terminal connected to a first power, and a second terminal connected to a second node having a same potential as the first node, a capacitor including a first capacitor terminal connected to a data power, and a second capacitor terminal connected to the first node, and a light emitting diode including a first diode terminal connected to the second node, and a second diode terminal connected to a second power.

公开(公告)号：US20240164141A1

公开(公告)日：2024-05-16

申请号：US18413059

申请日：2024-01-16

Applicant: Samsung Display Co., Ltd.

Inventor： Keunwoo Kim

IPC: H10K59/121

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H01L27/1222

Abstract: Provided are a thin-film transistor substrate that has enhanced electrical characteristics, such as off-current characteristics of a thin-film transistor, without increasing the number of mask processes, a display apparatus, and a method of manufacturing the thin-film transistor substrate. The thin-film transistor substrate includes: a semiconductor layer including a first conductive region, a second conductive region, and a first semiconductor region; a lower electrode disposed on the semiconductor layer and at least partially overlapping the first semiconductor region; and an upper electrode disposed on the lower electrode and at least partially overlapping the first semiconductor region, a first boundary between the first semiconductor region and the first conductive region coincides with an edge of the upper electrode, and a second boundary between the first semiconductor region and the second conductive region coincides with an edge of the lower electrode or an edge of the upper electrode.

公开(公告)号：US11727882B2

公开(公告)日：2023-08-15

申请号：US17489399

申请日：2021-09-29

Applicant: Samsung Display Co., Ltd.

Inventor： Hanbit Kim ,  Meejae Kang ,  Keunwoo Kim ,  Doo-Na Kim ,  Sangsub Kim ,  Do Kyeong Lee ,  Jaehwan Chu

IPC: G09G3/3258 ,  G09G3/3266

CPC classification number: G09G3/3258 ,  G09G3/3266 ,  G09G2300/0426

Abstract: A pixel includes: a capacitor connected between a first voltage line and a first node; a light emitting diode including a first electrode connected to a second node, and a second electrode connected to a second voltage line; a first transistor; a second transistor; a third transistor including a first electrode connected to the first node, a second electrode connected to the second node, and a gate electrode to receive a first scan signal; a fourth transistor including a first electrode connected to the first node, a second electrode connected to a third voltage line to receive a third voltage, and a gate electrode to receive a second scan signal; and a compensation transistor including a first electrode connected to the first node, a second electrode connected to a fourth voltage line to receive a compensation voltage, and a gate electrode to receive a compensation control voltage.

公开(公告)号：US11705057B2

公开(公告)日：2023-07-18

申请号：US17536560

申请日：2021-11-29

Applicant: Samsung Display Co., Ltd.

Inventor： Keunwoo Kim ,  Meejae Kang ,  Hanbit Kim ,  Do Kyeong Lee ,  Jaehwan Chu

IPC: G09G3/32 ,  H10K59/121 ,  H01L27/12 ,  H01L29/786

CPC classification number: G09G3/32 ,  H10K59/1213 ,  H10K59/1216 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2320/0257 ,  G09G2330/021 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78675

Abstract: A pixel includes a light emitting element, a driving switching element and a first compensation switching element and a second compensation switching element. The driving switching element is which applies a driving current to the light emitting element. The first compensation switching element and the second compensation switching element are connected between a control electrode of the driving switching element and an output electrode of the driving switching element. The first compensation switching element and the second compensation switching element are connected to each other in series. The driving switching element is a P-type transistor. The first compensation switching element is an N-type transistor. The second compensation switching element is a P-type transistor.

公开(公告)号：US11631727B2

公开(公告)日：2023-04-18

申请号：US17134595

申请日：2020-12-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Bummo Sung ,  Dokyeong Lee ,  Jaehwan Chu

IPC: H01L29/08 ,  H01L27/32 ,  H01L29/786

Abstract: A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.

公开(公告)号：US11600229B2

公开(公告)日：2023-03-07

申请号：US17684227

申请日：2022-03-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hanbit Kim ,  Meejae Kang ,  Keunwoo Kim ,  Doo-Na Kim ,  Sangsub Kim ,  Dokyeong Lee ,  Jaehwan Chu

IPC: G09G3/3233

Abstract: A pixel includes a first capacitor connected between a first electrode and a second electrode connected to a first node, a first transistor including a gate electrode connected to the first node, a first electrode connected to a second node, and a second electrode connected to a third node, a second transistor including a gate electrode that receives a data write gate signal, a first electrode that receives a data voltage, and a second electrode connected to the second node, a third transistor connected between the first node and the third node, a fourth transistor connected between the first node and an initialization voltage input terminal to which an initialization voltage is applied, an eighth transistor t connected to the third transistor and the fourth transistor, and an organic light emitting diode including an anode and a cathode receiving a second power supply voltage.

公开(公告)号：US20220376117A1

公开(公告)日：2022-11-24

申请号：US17573956

申请日：2022-01-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim

IPC: H01L29/786 ,  H01L27/32 ,  H01L51/52

Abstract: A thin-film transistor substrate includes: a substrate; a semiconductor layer on the substrate, where the semiconductor layer includes a first conductive region, a second conductive region, and a first channel region between the first conductive region and the second conductive region; a gate insulating layer on the semiconductor layer, where the gate insulating layer includes a first charge implanted region which overlaps a portion of the first channel region and into which charged ions are implanted; and a first gate electrode on the gate insulating layer to overlap the first channel region. The first charge implanted region is shifted to the first conductive region or the second conductive region.

公开(公告)号：US11348522B2

公开(公告)日：2022-05-31

申请号：US17125732

申请日：2020-12-17

Applicant: Samsung Display Co., Ltd.

Inventor： Keunwoo Kim ,  Sooyoung Park ,  Joonghyun Park ,  Dongwoo Kim ,  Kyoung-Ju Shin

IPC: G09G3/30 ,  G09G3/3233 ,  G09G3/3283 ,  H05B45/60

Abstract: A display device includes: pixels to emit light of various intensity in accordance with driving signals; data lines to communicate the driving signals to the pixels; scan lines to communicate scan signals to select at least one of the pixels to receive the driving signals; a first power supply to supply at least one driving voltage to the pixels; and a second power supply including an initial voltage terminal to supply an initial voltage to the pixels. The at least one pixel includes: a driving transistor connected between the first power supply and an anode electrode of an organic light emitting diode, a third transistor including an oxide transistor, the third transistor having a first electrode connected to the initial voltage terminal, a second electrode connected to the anode electrode, and first and second gate electrodes, each of which is connected to one of the scan lines, and a fourth transistor including a poly-silicon transistor, the fourth transistor having a first electrode connected to the first power supply, and a second electrode connected to a second electrode of the driving transistor.

公开(公告)号：US11211004B1

公开(公告)日：2021-12-28

申请号：US17155925

申请日：2021-01-22

Applicant: Samsung Display Co., Ltd.

Inventor： Keunwoo Kim ,  Taewook Kang

IPC: G09G3/3241 ,  G09G3/3266 ,  G09G3/3291

Abstract: A pixel includes a light-emitting element, a driving transistor that controls an amount of a driving current flowing to the light-emitting element according to a gate-source voltage, first and second compensation transistors that operate in response to a first scan signal and are electrically connected in series with each other between a gate and a drain of the driving transistor, first and second gate initialization transistors that operate in response to a second scan signal and are electrically connected in series with each other between a voltage line and the gate of the driving transistor, and a node connection transistor that connects a first floating node and a second floating node to each other in response to the second scan signal. The first floating node is between the first and second compensation transistors, and the second floating node is between the first and second gate initialization transistors.