公开(公告)号：US10811058B2

公开(公告)日：2020-10-20

申请号：US16269301

申请日：2019-02-06

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yanli Zhang ,  Zhixin Cui ,  Akio Nishida ,  Johann Alsmeier ,  Yan Li ,  Steven Sprouse

IPC: G11C5/06 ,  G06F11/08 ,  G11C8/14 ,  H01L23/538 ,  H01L27/105 ,  H01L23/498 ,  H01L25/065

Abstract: A bonded assembly includes a memory die bonded to a support die. The memory die contains at least one three-dimensional array of memory elements, memory-die dielectric material layers, and memory-die bonding pads. The support die contains at least one peripheral circuitry including complementary metal-oxide-semiconductor (CMOS) devices and configured to generate control signals for, and receive sense signals from, the at least one three-dimensional array of memory elements and a functional module and configured to provide a functionality that is independent of operation of the at least one three-dimensional array of memory elements. The functional module may include an error correction code (ECC) module, a memory module configured to interface with an external processor module located outside of the memory die, a microprocessor unit module, a wireless communication module, and/or a system level controller module.

公开(公告)号：US09748001B2

公开(公告)日：2017-08-29

申请号：US14244726

申请日：2014-04-03

Applicant: SanDisk Technologies LLC

Inventor： Yan Li ,  Kwang-ho Kim ,  Frank Tsai ,  Aldo Bottelli

IPC: G11C11/34 ,  G11C29/00 ,  G11C16/10

CPC classification number: G11C29/00 ,  G11C16/10 ,  G11C29/808

Abstract: Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data, although this may be done at a penalty of under programming for some bits, as is described further below. A self contained Built In Self Test (BIST) flow constructed to collect the bit information through a set of column tests is also described. Based on this information, the bad bits can be extracted and re-grouped into bytes by the controller or on the memory to more efficiently use the column redundancy area.