Abstract:
Apparatus and method contemplating a magnetoresistive memory apparatus having a read element having a high resistance material selected to optimize read sensitivity and a write element having a material selected for a lower critical current response than the read element critical current response to optimize switching efficiency, wherein the read element resistance is higher than the write element resistance, and a shared storage space for both elements.
Abstract:
An apparatus is includes a near field transducer positioned adjacent a media-facing surface and at the end of a waveguide having at least one core layer and a cladding layer. The apparatus also includes at least one optical reflector positioned adjacent opposing cross-track edges of the near field transducer and/or adjacent a down-track side of the near-field transducer.
Abstract:
An apparatus (e.g., a heat assisted magnetic recording read/write element) that has an optical component that extends to a location adjacent a media-facing surface of a slider body. The apparatus further includes a planar plasmon antenna that is disposed between the tip portion of the magnetic write pole and the optical component. The planar plasmon antenna can be formed of a plasmonic material operationally capable of a plasmonic excitation in response to an evanescent coupling with an optical mode of the optical component. In some instances, the planar plasmon antenna includes an enlarged region spaced from the optical component and a peg region formed in the enlarged region. The peg region has a thickness in a direction substantially transverse to the optical component that is less than a thickness of a portion of the enlarged region that spaces the peg region from the optical component.
Abstract:
An apparatus comprises a writer, a near-field transducer (NFT), a channel waveguide proximate the NFT, a dielectric layer between the NFT and waveguide, and a plurality of heat sinks. A first heat sink comprises a gap and contacts the NFT and the writer. A second heat sink extends across the gap of the first heat sink and between the NFT and a heat reservoir component, such as a return pole of the writer. The channel waveguide may contact the second heat sink, such as by encompassing a peripheral portion of the second heat sink. The second heat sink may have at least an outer surface comprising a plasmonic material, and may be configured to enhance plasmonic excitation of the NFT.
Abstract:
Systems that include an energy source configured to provide transverse electric (TE) mode energy; a channel waveguide configured to receive energy from the energy source, the channel waveguide having at least one mirror plane; and a near field transducer (NFT) configured to receive energy from the channel waveguide, the NFT having at least one mirror plane.
Abstract:
An apparatus includes a waveguide and a near-field transducer adjacent the waveguide. The near-field transducer includes an enlarged region and a peg region extending from the enlarged region towards an air bearing surface. A write pole is adjacent the near-field transducer and include a first portion having an edge extending towards the air bearing surface at a non-orthogonal angle with respect to the air bearing surface. A second portion of the write pole extends orthogonally to the air bearing surface and is in contact with the first portion. The apparatus includes an insulator-filled gap at the air bearing surface between the second portion of the write pole and the peg region of the near-field transducer. The gap is bounded away from the air bearing surface by the enlarged region of the near-field transducer.
Abstract:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.