公开(公告)号：US20080283945A1

公开(公告)日：2008-11-20

申请号：US12121736

申请日：2008-05-15

申请人： Takashi Kobayashi ,  Shuntaro Machida

发明人： Takashi Kobayashi ,  Shuntaro Machida

IPC分类号： H01L29/84 ,  H01L41/083

CPC分类号： B06B1/0292 ,  G01N29/2406

摘要： A lower electrode is formed over a semiconductor substrate via an insulator film, first and second insulator films are formed to cover the lower electrode, an upper electrode is formed over the second insulator film, third to fifth insulator films are formed to cover the upper electrode and a void is formed between the first and second insulator films between the lower and upper electrodes. An ultrasonic transducer comprises the lower electrode, the first insulator film, the void, the second insulator film and the upper electrode. A portion of the first insulator film contacting with the lower electrode is made of silicon oxide, a portion of the second insulator film contacting with the upper electrode is made of silicon oxide and the first or second insulator film includes a silicon nitride film positioned between the upper and lower electrodes and not in contact with the upper and lower electrodes.

摘要翻译： 通过绝缘膜在半导体衬底上形成下电极，形成第一和第二绝缘膜以覆盖下电极，在第二绝缘膜上方形成上电极，形成第三至第五绝缘膜以覆盖上电极 并且在下电极和上电极之间的第一和第二绝缘膜之间形成空隙。 超声换能器包括下电极，第一绝缘膜，空隙，第二绝缘膜和上电极。 与下部电极接触的第一绝缘膜的一部分由氧化硅构成，与上部电极接触的第二绝缘膜的一部分由氧化硅构成，第一或第二绝缘膜包括位于 上下电极并不与上电极和下电极接触。

公开(公告)号：US20080277661A1

公开(公告)日：2008-11-13

申请号：US12113923

申请日：2008-05-01

申请人： Shuntaro MACHIDA ,  Takashi Kobayashi

发明人： Shuntaro MACHIDA ,  Takashi Kobayashi

IPC分类号： H01L21/66 ,  H01L23/58

CPC分类号： H01L22/32 ,  B81C99/0045 ,  G01R31/2884 ,  H01L21/78 ,  H01L2224/05554

摘要： A technique of manufacturing a semiconductor device capable of performing a probe test by a common test apparatus as normal LSI chips even for large-area chips is provided. A chip comprising a device formed on a device area by a semiconductor process and including a plurality of test areas sectioned by chip areas is prepared. Next, pads to be electrically connected to the device are formed at corresponding positions on the respective plurality of test areas. Subsequently, the respective test areas are tested by a same probe card via the plurality of pads.

摘要翻译： 提供了即使对于大面积芯片也能够通过普通的测试装置进行探针测试的半导体器件的制造技术。 制备包括通过半导体工艺在器件区域上形成并包括由芯片区域划分的多个测试区域的器件的芯片。 接下来，在相应的多个测试区域上的相应位置处形成要与该器件电连接的焊盘。 随后，通过多个焊盘通过相同的探针卡测试各个测试区域。

公开(公告)号：US20080130471A1

公开(公告)日：2008-06-05

申请号：US11820095

申请日：2007-06-18

申请人： Takashi Kobayashi

发明人： Takashi Kobayashi

IPC分类号： G11B7/00

CPC分类号： G11B7/1359 ,  G11B7/125

摘要： An optical pickup includes a light emitting device, a prism, and an objective lens. The light emitting device emits a laser beam. The prism has an entrance face and an exit face. In the prism, the laser beam emitted from the light emitting device is perpendicularly incident on the entrance face, is parallel-shifted, is perpendicularly reflected, and is emerged from the exit face. The objective lens focuses the laser beam emerged from the prism on a recording surface of an optical disk.

摘要翻译： 光拾取器包括发光器件，棱镜和物镜。 发光装置发射激光束。 棱镜具有入射面和出射面。 在棱镜中，从发光装置发射的激光束垂直入射在入射面上，被平行移动，垂直反射，并从出射面出射。 物镜将从棱镜出射的激光束聚焦在光盘的记录表面上。

公开(公告)号：US07366015B2

公开(公告)日：2008-04-29

申请号：US11700085

申请日：2007-01-31

申请人： Takashi Kobayashi ,  Hideaki Kurata ,  Naoki Kobayashi ,  Hitoshi Kume ,  Katsutaka Kimura ,  Shunichi Saeki

发明人： Takashi Kobayashi ,  Hideaki Kurata ,  Naoki Kobayashi ,  Hitoshi Kume ,  Katsutaka Kimura ,  Shunichi Saeki

IPC分类号： G11C11/34

CPC分类号： H01L27/11521 ,  G11C16/0416 ,  G11C16/0425 ,  G11C16/12 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

摘要： A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an insulator film. Auxiliary gates coupled to selected memory cells function to generate hot electrons and are alternately arranged with other auxiliary gates functioning to prevent write errors in the non-selected memory cells.

摘要翻译： 一种半导体集成器件，具有多个存储单元，每个存储单元包括通过绝缘膜形成在浮置栅极的侧表面上的浮置栅极，控制栅极和辅助栅极。 耦合到选择的存储单元的辅助栅极用于产生热电子，并且与其他辅助栅极交替布置，其功能是防止未选择的存储器单元中的写入错误。

公开(公告)号：US20080093658A1

公开(公告)日：2008-04-24

申请号：US11813043

申请日：2005-12-22

申请人： Toshihiko Shiozawa ,  Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

发明人： Toshihiko Shiozawa ,  Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

IPC分类号： H01L29/788 ,  H01L21/383 ,  H01L21/8247

CPC分类号： H01L29/513 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3143 ,  H01L29/40114 ,  H01L29/7881

摘要： When nitriding a tunnel oxide film in a nonvolatile memory device a nitrided region is formed in the surface portion of the tunnel oxide film by a plasma processing using a process gas containing nitrogen gas.

摘要翻译： 当在非易失性存储装置中对隧道氧化膜进行氮化时，通过使用含有氮气的工艺气体进行等离子体处理，在隧道氧化膜的表面部分形成氮化区域。

公开(公告)号：US07215034B2

公开(公告)日：2007-05-08

申请号：US11195604

申请日：2005-08-03

申请人： Noriaki Hino ,  Shinichi Fujino ,  Hiroshi Kanazawa ,  Toshiyuki Innami ,  Takashi Kobayashi

发明人： Noriaki Hino ,  Shinichi Fujino ,  Hiroshi Kanazawa ,  Toshiyuki Innami ,  Takashi Kobayashi

IPC分类号： F02D20/06

CPC分类号： H02J1/08 ,  B60R16/03 ,  H02J2001/008

摘要： An A.C. generator has a rotor that is equipped with a permanent magnet and a field coil. The output of the A.C. generator charges the high-voltage battery. Voltage of the high-voltage battery is stepped-down by a DC/DC converter and supplied to the low-voltage battery. When the motor controller detects that the field coil has not been energized, the higher-rank controller switches so as to generate power by means of the permanent magnet of the A.C. generator and charge the low-voltage battery. This mechanism enables power to be generated when a circuit malfunctions.Thereby, a power supply system for vehicle can generate power when a circuit malfunctions so that the driver on the vehicle can drive the vehicle to a repair shop.

摘要翻译： 交流发电机具有配备永磁体和励磁线圈的转子。 交流发电机的输出为高压电池充电。 高压电池的电压由DC / DC转换器降压，并提供给低压电池。 当电机控制器检测到励磁线圈未通电时，高级别控制器开关，以便通过交流发电机的永磁体产生电力，并对低压电池充电。 这种机制使电路在电路发生故障时产生电力。 因此，当电路发生故障时，用于车辆的电源系统可以产生电力，使得车辆上的驾驶员能够将车辆驱动到修理车间。

公开(公告)号：US20070051586A1

公开(公告)日：2007-03-08

申请号：US11366403

申请日：2006-03-03

申请人： Takashi Kobayashi

发明人： Takashi Kobayashi

IPC分类号： B23P19/00 ,  B61B13/12

CPC分类号： B61J3/08 ,  B23P19/001 ,  B65G25/10

摘要： A work conveying apparatus including at least one movable work conveying device to support a work, a drive device capable of reciprocating by a predetermined distance in a predetermined direction, and a latching portion formed on at least one of the working conveying device and the drive device and configured to latch the working conveying device with the drive device and move the work conveying device when the drive device is moved in one direction in the reciprocating direction.

摘要翻译： 一种工件输送装置，包括至少一个用于支撑工件的可移动工件输送装置，能够沿预定方向往复运动预定距离的驱动装置和形成在所述工作输送装置和所述驱动装置中的至少一个上的闩锁部分 并且构造成当所述驱动装置沿着往复方向沿一个方向移动时，使所述工作输送装置与所述驱动装置锁定并移动所述工件输送装置。

公开(公告)号：US20060275986A1

公开(公告)日：2006-12-07

申请号：US11499756

申请日：2006-08-07

申请人： Takashi Kobayashi ,  Yasushi Goto ,  Tokuo Kure ,  Hideaki Kurata ,  Hitoshi Kume ,  Katsutaka Kimura ,  Syunichi Saeki

发明人： Takashi Kobayashi ,  Yasushi Goto ,  Tokuo Kure ,  Hideaki Kurata ,  Hitoshi Kume ,  Katsutaka Kimura ,  Syunichi Saeki

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42328 ,  H01L29/7881

摘要： A semiconductor integrated circuit device with third gates comprising second conduction type source/drain diffusion layer regions 205 formed first conduction type well 201, floating gates 203b formed on semiconductor substrate 200 through an insulator film 202, control gates 211a formed on floating gates 203b through nitrogen-introduced silicon oxide film 210a and third gates 207a different from the floating gates and the control gates, formed through the semiconductor substrates, the floating gates, the control gates and the insulator film, where the third gates are formed as filled in gaps between the floating gates existing in a vertical direction to word lines and channels and the height of third gates 207a thus formed is made lower than that of floating gates 203b, has improved reduction of memory cell size and operating speed and improved reliability after programming/erasing cycles.

摘要翻译： 具有第三栅极的半导体集成电路器件包括形成在第一导电型阱201的第二导电型源极/漏极扩散层区域205，通过绝缘膜202形成在半导体衬底200上的浮置栅极203b，形成在浮动栅极203上的控制栅极211a b通过氮引入氧化硅膜210a和与通过半导体衬底，浮栅，控制栅极和绝缘膜形成的浮栅和控制栅极不同的第三栅极207a，其中第三栅极形成为 填充在垂直方向上存在的浮动栅极与字线和沟道之间的间隙以及如此形成的第三栅极207a的高度低于浮动栅极203b的高度，具有改善的存储单元尺寸和操作速度的降低和改进 编程/擦除周期后的可靠性。

公开(公告)号：US20060173310A1

公开(公告)日：2006-08-03

申请号：US10563086

申请日：2004-07-02

申请人： Satoshi Tamano ,  Akibiko Hanaoka ,  Hideki Okazaki ,  Takashi Kobayashi ,  Sachie Yoshida

发明人： Satoshi Tamano ,  Akibiko Hanaoka ,  Hideki Okazaki ,  Takashi Kobayashi ,  Sachie Yoshida

IPC分类号： A61B8/12

CPC分类号： A61B8/12 ,  A61B8/4488

摘要： In an ultrasonic probe including an insert section which is to be inserted into a body cavity organ of a subject and a handle section which is coupled with the insert section, a plurality of vibrator elements (104) are disposed at a tip end of the insert section over the entire 360 degree circumference thereof and in the handle section, a connection change over switch (105) is disposed which successively changes over the electrical connection of a predetermined number of the vibrator elements among the plurality of the vibrator elements to be connected with a predetermined number of ultrasonic wave transmission and reception channels (701,702) in an ultrasonic diagnostic apparatus main body for transmitting and receiving ultrasonic wave signals. Accordingly, an ultrasonic probe which permits to collect ultrasonic wave images including tomograms and blood flow images of high quality without positional irregularity over the entire circumference of the insert section of the ultrasonic probe and to display the same, and an ultrasonic diagnostic apparatus using the same are obtained.

摘要翻译： 在包括插入到被检体的体腔器官的插入部和与插入部结合的手柄部的超声波探头中，多个振动元件（104）设置在插入物的前端 在其整个360度圆周上，并且在把手部分中，设置连接切换开关（105），其连续地切换要连接的多个振动器元件中的预定数量的振动器元件的电连接 超声波诊断装置主体中的预定数量的超声波发送接收通道（701,702），用于发送和接收超声波信号。 因此，超声波探头能够在超声波探头的插入部的整个圆周上收集包括高质量的超声波图像而不具有位置不规则的超声波图像，并且显示该超声波探头，以及使用其的超声波诊断装置 获得。

公开(公告)号：US07045854B2

公开(公告)日：2006-05-16

申请号：US10689101

申请日：2003-10-21

申请人： Taro Osabe ,  Tomoyuki Ishii ,  Takashi Kobayashi

发明人： Taro Osabe ,  Tomoyuki Ishii ,  Takashi Kobayashi

IPC分类号： H01L29/788

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  G11C16/0475 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923

摘要： An object of the present invention is to provide a semiconductor memory device suitable for larger-capacity storage because of its ability to store 3 or more bits in one element and capable of a high-speed and high-efficiency write operation due to a reduced leakage current during the write operation and provide a fabrication method therefor. According to the present invention, each of elements has a source region, a drain region, a control gate, two charge storage regions, and one or more assist gates. During a write operation, source side injection writing is performed with respect to a write target element by using the assist gates, while adjacent elements are isolated by field isolation using the assist gates.

摘要翻译： 本发明的目的是提供一种适用于大容量存储的半导体存储器件，因为它能够在一个元件中存储3个或更多个位并能够由于泄漏减少而进行高速和高效率的写入操作 在写操作期间提供电流并提供其制造方法。 根据本发明，每个元件具有源极区，漏极区，控制栅极，两个电荷存储区域以及一个或多个辅助栅极。 在写入操作期间，通过使用辅助栅极相对于写入目标元件执行源侧注入写入，而通过使用辅助栅极的场隔离来隔离相邻元件。