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1.发明申请Method for Nitriding Tunnel Oxide Film, Method for Manufacturing Non-Volatile Memory Device, Non-Volatile Memory Device, Control Program and Computer-Readable Recording Medium 审中-公开氮氧化物膜的制造方法，非易失性存储器件的制造方法，非易失性存储器件，控制程序和计算机可读记录介质公开(公告)号：US20080093658A1
公开(公告)日：2008-04-24
申请号：US11813043
申请日：2005-12-22
IPC分类号： H01L29/788 , H01L21/383 , H01L21/8247
CPC分类号： H01L29/513 , H01L21/022 , H01L21/02271 , H01L21/02332 , H01L21/0234 , H01L21/3143 , H01L29/40114 , H01L29/7881
摘要： When nitriding a tunnel oxide film in a nonvolatile memory device a nitrided region is formed in the surface portion of the tunnel oxide film by a plasma processing using a process gas containing nitrogen gas.
摘要翻译： 当在非易失性存储装置中对隧道氧化膜进行氮化时，通过使用含有氮气的工艺气体进行等离子体处理，在隧道氧化膜的表面部分形成氮化区域。
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公开(公告)号：US07875322B2
公开(公告)日：2011-01-25
申请号：US11794894
申请日：2006-01-05
IPC分类号： C23C16/511
CPC分类号： C23C8/36 , H01J37/32192 , H01J37/32935 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.
摘要翻译： 脉冲微波通过匹配电路从微波产生单元提供给波导管。 微波通过内部导体提供给平面天线构件。 微波从平面天线构件通过微波传输板辐射到室内的晶片上方的空间中。 通过从平面天线构件通过微波传输板辐射到室中的脉动微波在室内形成电磁场，将Ar气体，H 2气体和O 2气体转化成等离子体，以在晶片上形成氧化膜。
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公开(公告)号：US08034183B2
公开(公告)日：2011-10-11
申请号：US11883523
申请日：2006-01-23
CPC分类号： H01J37/32862 , Y10S438/905
摘要： In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H2 and O2.
摘要翻译： 在通过使用具有根据某种图案形成的许多槽的平面天线（径向线槽天线）将微波发生器的微波辐射到室中的RLSA微波等离子体处理装置中，用Na等污染的室被使用 含有H2和O2的清洁气体。
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公开(公告)号：US20080317975A1
公开(公告)日：2008-12-25
申请号：US11883523
申请日：2006-01-23
IPC分类号： C23C16/511 , B08B5/00 , C23C16/00 , C23C16/513
CPC分类号： H01J37/32862 , Y10S438/905
摘要： In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H2 and O2.
摘要翻译： 在通过使用具有根据某种图案形成的许多槽的平面天线（径向线槽天线）将微波发生器的微波辐射到室中的RLSA微波等离子体处理装置中，用Na等污染的室被使用 含有H2和O2的清洁气体。
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公开(公告)号：US20090035484A1
公开(公告)日：2009-02-05
申请号：US11794894
申请日：2006-01-05
IPC分类号： C23C16/513
CPC分类号： C23C8/36 , H01J37/32192 , H01J37/32935 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.
摘要翻译： 脉冲微波通过匹配电路从微波产生单元提供给波导管。 微波通过内部导体提供给平面天线构件。 微波从平面天线构件通过微波传输板辐射到室内的晶片上方的空间中。 通过从平面天线构件通过微波传输板辐射到室中的脉动微波在室内形成电磁场，将Ar气体，H 2气体和O 2气体转化成等离子体，以在晶片上形成氧化膜。
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6.发明申请METHOD FOR PRODUCING SILICON OXIDE FILM, CONTROL PROGRAM THEREOF, RECORDING MEDIUM AND PLASMA PROCESSING APPARATUS 审中-公开生产氧化硅膜的方法，其控制程序，记录介质和等离子体处理装置公开(公告)号：US20090239352A1
公开(公告)日：2009-09-24
申请号：US11910322
申请日：2006-03-28
申请人： Junichi Kitagawa , Shingo Furui
发明人： Junichi Kitagawa , Shingo Furui
IPC分类号： H01L21/762 , B05C11/00
CPC分类号： C23C16/402 , C23C16/045 , C23C16/509 , H01J37/32935 , H01L21/02238 , H01L21/02252 , H01L21/31662 , H01L21/76235
摘要： A silicon oxide film formation method includes generating plasma inside a process chamber of a plasma processing apparatus, by use of a process gas having an oxygen ratio of 1% or more, and a process pressure of 133.3 Pa or less; and oxidizing by the plasma a silicon surface exposed inside a recessed part formed in a silicon layer on a target object, thereby forming a silicon oxide film.
摘要翻译： 氧化硅膜形成方法包括通过使用氧比为1％以上，处理压力为133.3Pa以下的处理气体，在等离子体处理装置的处理室内产生等离子体; 并且通过等离子体氧化暴露在形成在目标物体上的硅层中的凹部内的硅表面，从而形成氧化硅膜。
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公开(公告)号：US08466534B2
公开(公告)日：2013-06-18
申请号：US13203769
申请日：2010-03-26
IPC分类号： H01L271/46
CPC分类号： H01L27/14676 , G01T1/244 , H01L31/085
摘要： The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.
摘要翻译： 本发明的结构包括依次层叠的有源矩阵基板，非晶硒层，高电阻层，金电极层，绝缘层和辅助板。 在本发明的一个方面，绝缘层具有添加无机阴离子交换剂，以提供防止非晶半导体层和载体选择性高电阻膜中的空隙形成和针孔形成的辐射检测器，而不会在 辅助板 无机阴离子交换剂吸附绝缘层中的氯离子，从而防止由于氯离子被吸引到金电极层而导致的X射线检测器的破坏。
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公开(公告)号：US20110163306A1
公开(公告)日：2011-07-07
申请号：US13063061
申请日：2008-09-10
IPC分类号： H01L31/0272
CPC分类号： G01T1/244 , H01L27/14618 , H01L27/14676 , H01L2924/0002 , H01L2924/00
摘要： A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.
摘要翻译： 本发明的放射线检测器具有可固化的合成树脂膜，其覆盖辐射敏感半导体层，载体选择性高电阻膜和公共电极的暴露表面，其中不含氯化物的材料混合使用在制造过程中 可固化合成树脂膜。 这样可以防止载流子选择性高电阻膜和半导体层中的氯离子形成针孔和空隙。 也可以在公共电极的露出表面和可固化合成树脂膜之间设置不透过离子性材料的保护膜，由此防止载体选择性高电阻膜被包含在可固化合成树脂膜中的氯离子腐蚀 ，并且防止流过半导体层的暗电流增加。
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公开(公告)号：US08564082B2
公开(公告)日：2013-10-22
申请号：US13063061
申请日：2008-09-10
CPC分类号： G01T1/244 , H01L27/14618 , H01L27/14676 , H01L2924/0002 , H01L2924/00
摘要： A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.
摘要翻译： 本发明的放射线检测器具有可固化的合成树脂膜，其覆盖辐射敏感半导体层，载体选择性高电阻膜和公共电极的暴露表面，其中不含氯化物的材料混合使用在制造过程中 可固化合成树脂膜。 这样可以防止载流子选择性高电阻膜和半导体层中的氯离子形成针孔和空隙。 也可以在公共电极的露出表面和可固化合成树脂膜之间设置不透过离子性材料的保护膜，由此防止载体选择性高电阻膜被包含在可固化合成树脂膜中的氯离子腐蚀 ，并且防止流过半导体层的暗电流增加。
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公开(公告)号：US20110315978A1
公开(公告)日：2011-12-29
申请号：US13203769
申请日：2010-03-26
IPC分类号： H01L31/0272
CPC分类号： H01L27/14676 , G01T1/244 , H01L31/085
摘要： The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.
摘要翻译： 本发明的结构包括依次层叠的有源矩阵基板，非晶硒层，高电阻层，金电极层，绝缘层和辅助板。 在本发明的一个方面，绝缘层具有添加无机阴离子交换剂，以提供防止非晶半导体层和载体选择性高电阻膜中的空隙形成和针孔形成的辐射检测器，而不会在 辅助板 无机阴离子交换剂吸附绝缘层中的氯离子，从而防止由于氯离子被吸引到金电极层而导致的X射线检测器的破坏。
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