公开(公告)号：US20220165914A1

公开(公告)日：2022-05-26

申请号：US17586804

申请日：2022-01-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Keum Ju LEE ,  Seom Geun LEE ,  Kyoung Wan KIM ,  Yong Woo RYU ,  Mi Na JANG

IPC: H01L33/14 ,  H01L27/15 ,  H01L33/38 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

公开(公告)号：US20210375980A1

公开(公告)日：2021-12-02

申请号：US17318475

申请日：2021-05-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu JANG ,  Seom Geun LEE ,  Yong Woo RYU

IPC: H01L27/15 ,  H01L33/62

Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and a plurality of pads disposed over the first LED stack. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region. The plurality of pads is disposed on the peripheral region of the first LED stack.

公开(公告)号：US20210151421A1

公开(公告)日：2021-05-20

申请号：US17096289

申请日：2020-11-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Seong Kyu JANG ,  Yong Woo RYU ,  Jong Hyeon CHAE

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/42

Abstract: A light emitting device including a first LED stack, a second LED stack, and a third LED stack each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the second LED stack, a second planarization layer disposed on the first LED stack, lower buried vias passing through the first planarization layer, the second LED stack, and the first bonding layer and electrically connected to the semiconductor layers of the third LED stack, respectively, and upper buried vias passing through the second planarization layer and the first LED stack, in which a width of an upper end of each of the lower buried vias and the upper buried vias is greater than a width of a corresponding through hole.

公开(公告)号：US20200035865A1

公开(公告)日：2020-01-30

申请号：US16518169

申请日：2019-07-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Chan Seob SHIN

IPC: H01L33/42 ,  H01L33/38 ,  H01L33/00

Abstract: A light emitting diode with a zinc oxide layer and a method of fabricating the same are disclosed. The light emitting diode includes: a light emitting structure including a gallium nitride based first conductivity type semiconductor layer, a gallium nitride based second conductivity type semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer disposed on the second conductivity type semiconductor layer, wherein the ZnO transparent electrode layer comprises a ZnO seed layer and a ZnO bulk layer formed on the ZnO seed layer, wherein the ZnO bulk layer is porous compared to the ZnO seed layer, wherein an interface between the ZnO seed layer and the second conductivity type semiconductor layer is flatter than an interface between the ZnO seed layer and the ZnO bulk layer, and wherein the interface between the ZnO seed layer and the ZnO bulk layer has an irregular concavo-convex shape.