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公开(公告)号:US20190097059A1
公开(公告)日:2019-03-28
申请号:US16143528
申请日:2018-09-27
Applicant: Sharp Kabushiki Kaisha
Inventor: Tetsuo KIKUCHI , Tohru DAITOH , Hajime IMAI , Masahiko SUZUKI , Setsuji NISHIMIYA , Teruyuki UEDA , Kengo HARA
IPC: H01L29/786 , H01L27/12 , H01L29/24 , H01L29/267 , G02F1/1368
Abstract: In a semiconductor device, at least one thin-film transistor includes a semiconductor layer, a gate electrode, a gate insulating layer, a source electrode, and a drain electrode. The semiconductor layer has a multilayer structure that includes a plurality of channel formation layers including a first channel formation layer and a second channel formation layer, and at least one middle layer including a first middle layer provided between the first channel formation layer and the second channel formation layer. The first channel formation layer is disposed closer to the gate insulating layer than is the second channel formation layer, and is in contact with the gate insulating layer. The plurality of channel formation layers and the at least one middle layer are all an oxide semiconductor layer. The plurality of channel formation layers each have a mobility higher than that of the at least one middle layer.
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公开(公告)号:US20180329242A1
公开(公告)日:2018-11-15
申请号:US15776415
申请日:2017-02-17
Applicant: Sharp Kabushiki Kaisha
Inventor: Hideki KITAGAWA , Tohru DAITOH , Hajime IMAI , Toshikatsu ITOH , Hisao OCHI , Tetsuo KIKUCHI , Masahiko SUZUKI , Teruyuki UEDA , Ryosuke GUNJI , Kengo HARA , Setsuji NISHIMIYA
IPC: G02F1/1362 , G02F1/1343 , G02F1/1339 , G02F1/1333 , H01L27/12
CPC classification number: G02F1/1362 , G02F1/133345 , G02F1/1339 , G02F1/1343 , G02F1/1368 , G02F2201/123 , H01L27/1214
Abstract: A spacer is fixed while an effect on a surface of an active matrix substrate is prevented. An active matrix substrate (1) includes a thin film transistor (11) which is provided on a substrate (2) and which has a recess made at a surface of the thin film transistor, and a spacer (13) fitted in the recess.
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