SEMICONDUCTOR DEVICE
    41.
    发明申请

    公开(公告)号:US20190097059A1

    公开(公告)日:2019-03-28

    申请号:US16143528

    申请日:2018-09-27

    Abstract: In a semiconductor device, at least one thin-film transistor includes a semiconductor layer, a gate electrode, a gate insulating layer, a source electrode, and a drain electrode. The semiconductor layer has a multilayer structure that includes a plurality of channel formation layers including a first channel formation layer and a second channel formation layer, and at least one middle layer including a first middle layer provided between the first channel formation layer and the second channel formation layer. The first channel formation layer is disposed closer to the gate insulating layer than is the second channel formation layer, and is in contact with the gate insulating layer. The plurality of channel formation layers and the at least one middle layer are all an oxide semiconductor layer. The plurality of channel formation layers each have a mobility higher than that of the at least one middle layer.

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