公开(公告)号：US20090230428A1

公开(公告)日：2009-09-17

申请号：US11721069

申请日：2005-12-05

申请人： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

发明人： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L49/003 ,  H01L29/452

摘要： The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

摘要翻译： 突变金属 - 绝缘体转换装置包括：突然的金属绝缘体过渡材料层，其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。 这里，两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成，第二层形成在第一层上并包括In的第三层，第三层 形成在第二层上并且包含Mo或W，以及形成在第三层上并包含Au的第四层。

公开(公告)号：US09660190B2

公开(公告)日：2017-05-23

申请号：US14240335

申请日：2012-08-16

申请人： Hyun-Tak Kim ,  Bongjun Kim ,  Jong Chan Park

发明人： Hyun-Tak Kim ,  Bongjun Kim ,  Jong Chan Park

IPC分类号： H01L49/00 ,  G08B17/06 ,  H01C1/02 ,  H01C7/04

CPC分类号： G08B17/06 ,  H01C1/02 ,  H01C7/047 ,  H01H37/32 ,  H01L27/0248 ,  H01L27/0647 ,  H01L49/003 ,  H02H9/045

摘要： The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

公开(公告)号：US20140210628A1

公开(公告)日：2014-07-31

申请号：US14240335

申请日：2012-08-16

申请人： Hyun-Tak Kim ,  Bongjun Kim ,  Jong Chan Park

发明人： Hyun-Tak Kim ,  Bongjun Kim ,  Jong Chan Park

IPC分类号： H01L49/00 ,  G08B17/06

CPC分类号： G08B17/06 ,  H01C1/02 ,  H01C7/047 ,  H01H37/32 ,  H01L27/0248 ,  H01L27/0647 ,  H01L49/003 ,  H02H9/045

摘要： The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

摘要翻译： 本发明构思提供了由透明复合环氧树脂模制的MIT装置和包括MIT装置的火灾探测装置。 火情检测装置由电力控制装置供给电源。 火灾检测装置包括MIT装置，其包括由透明复合环氧树脂模制的MIT芯片，从功率控制装置提供电源的二极管电路电路，用于提供非极性电源;提供非易失性环氧树脂的通知电路， 响应于来自MIT装置的检测信号，来自二极管桥式电路的极性电源用于警告火灾报警;以及稳定电路，用于将检测信号保持一定时间。

公开(公告)号：US08330135B2

公开(公告)日：2012-12-11

申请号：US12671890

申请日：2008-06-20

申请人： Sung-Youl Choi ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Jae-Yeob Shim ,  Hyun-Tak Kim

发明人： Sung-Youl Choi ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Jae-Yeob Shim ,  Hyun-Tak Kim

IPC分类号： H01L47/00

CPC分类号： H01L49/003

摘要： Provided are a germanium (Ge) based metal-insulator transition (MIT) thin film which is formed of a Ge single-element material instead of a compound material of two or more elements and by which material growth may be easily performed and a problem of a second phase characteristic in accordance with a structural defect and an included impurity may be solved, an MIT device including the MIT thin film, and a method of fabricating the MIT device. The MIT device includes a substrate; a germanium (Ge) based MIT thin film which is formed of a Ge single-element material on the substrate and in which a discontinuous MIT occurs at a predetermined transition voltage; and at least two thin film electrodes contacting the Ge based MIT thin film, wherein the discontinuous MIT occurs in the Ge based MIT thin film due to a voltage or a current which is applied through the thin film electrodes.

摘要翻译： 提供了由Ge单元素材料代替两种或更多种元素的复合材料形成的锗（Ge）基金属 - 绝缘体转变（MIT）薄膜，并且可容易地进行材料生长的问题 可以解决根据结构缺陷和所包括的杂质的第二相特性，包括MIT薄膜的MIT装置和制造MIT装置的方法。 MIT装置包括基板; 在基板上由Ge单元素材料形成的锗（Ge）基MIT薄膜，其中以预定的转变电压发生不连续的MIT; 以及与Ge基MIT薄膜接触的至少两个薄膜电极，其中由于通过薄膜电极施加的电压或电流，在Ge基MIT薄膜中发生不连续的MIT。

公开(公告)号：US07911125B2

公开(公告)日：2011-03-22

申请号：US12064948

申请日：2006-08-25

申请人： Hyun-Tak Kim ,  Byung Gyu Chae ,  Kwang-Yong Kang ,  Yoon Ho Song

发明人： Hyun-Tak Kim ,  Byung Gyu Chae ,  Kwang-Yong Kang ,  Yoon Ho Song

IPC分类号： H01J1/62

CPC分类号： H01J31/127 ,  H01J1/316 ,  H01J2201/316 ,  H01J2201/3165 ,  H01J2329/0486 ,  H01J2329/0489

摘要： An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

摘要翻译： 提供具有高电子发射速率的电子发射装置和包括该装置的显示器。 电子发射器件采用突发金属 - 绝缘体转换，器件包括：板; 金属 - 绝缘体转变（MIT）材料层，设置在所述板上并与所分割的MIT材料层的彼此面对的部分分开预定的间隙; 以及连接到分割的金属 - 绝缘体转移材料层的每个部分以将电子发射到分割的金属 - 绝缘体转移材料层的部分之间的间隙的电极。

公开(公告)号：US07767501B2

公开(公告)日：2010-08-03

申请号：US11721069

申请日：2005-12-05

申请人： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

发明人： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

IPC分类号： H01L21/335

CPC分类号： H01L49/003 ,  H01L29/452

摘要： The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

摘要翻译： 突变金属 - 绝缘体转换装置包括：突然的金属绝缘体过渡材料层，其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。 这里，两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成，第二层形成在第一层上并包括In的第三层，第三层 形成在第二层上并且包含Mo或W，以及形成在第三层上并包含Au的第四层。

公开(公告)号：US20060172907A1

公开(公告)日：2006-08-03

申请号：US11341412

申请日：2006-01-30

申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim ,  Kui-Jong Baek ,  Sung-Bae Kim ,  Hyun-Tak Kim ,  Sang-Won Lee ,  Woong Han ,  Jung-Hun Lim

发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim ,  Kui-Jong Baek ,  Sung-Bae Kim ,  Hyun-Tak Kim ,  Sang-Won Lee ,  Woong Han ,  Jung-Hun Lim

IPC分类号： C11D7/32

CPC分类号： C11D3/042 ,  C11D3/30 ,  C11D3/33 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047

摘要： According to an example embodiment of the present invention, the microelectronic cleaning agent may include a fluoride component, an acid component, a chelating agent, a surfactant and water. Example embodiments of the present invention provide a microelectronic cleaning agent which can selectively remove, for example, a high-k dielectric layer. The microelectronic cleaning agent includes from about 0.001 weight % to about 10 weight % of a fluoride component, from about 0.001 weight % to about 30 weight % of an acid component, from about 0.001 weight % to about 20 weight % of a chelating agent, from about 0.001 weight % to about 10 weight % of a surfactant, and water (H2O). The water may comprise the remainder of the cleaning agent. According to another embodiment of the present invention, a method of fabricating a semiconductor device using the microelectronic cleaning agent is also provided.

摘要翻译： 根据本发明的示例性实施方案，微电子清洗剂可以包括氟化物组分，酸组分，螯合剂，表面活性剂和水。 本发明的示例性实施方案提供了可以选择性地除去例如高k电介质层的微电子清洁剂。 微电子清洁剂包括约0.001重量％至约10重量％的氟化物组分，约0.001重量％至约30重量％的酸组分，约0.001重量％至约20重量％的螯合剂， 约0.001重量％至约10重量％的表面活性剂和水（H 2 O 2）。 水可以包括剩余的清洁剂。 根据本发明的另一实施例，还提供了使用微电子清洁剂制造半导体器件的方法。