公开(公告)号：US20160020384A1

公开(公告)日：2016-01-21

申请号：US14656659

申请日：2015-03-12

申请人： Dae-Eun JEONG ,  Sang-Yong KIM ,  Yoon-Jong SONG

发明人： Dae-Eun JEONG ,  Sang-Yong KIM ,  Yoon-Jong SONG

IPC分类号： H01L43/08 ,  G11C11/16 ,  H01L43/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  G11C2013/0083 ,  H01L43/02 ,  H01L43/12

摘要： Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.

摘要翻译： 提供一种磁存储器件及其形成方法。 磁存储器件包括位于衬底上的磁性隧道结图案，其包括磁性图案和位于磁性图案之间的隧道势垒图案，以及位于磁性隧道结图案上的第一结晶保存图案，并且具有比 磁性图案。 第一个结晶保存图案是无定形的。

公开(公告)号：US20140235881A1

公开(公告)日：2014-08-21

申请号：US14348566

申请日：2012-07-09

申请人： Jin Ku Cho ,  Sang Yong Kim ,  Jae Hoon Cho ,  Bo Ra Kim ,  Paul Joo

发明人： Jin Ku Cho ,  Sang Yong Kim ,  Jae Hoon Cho ,  Bo Ra Kim ,  Paul Joo

IPC分类号： C07D307/50

CPC分类号： C07D307/50 ,  C07D307/46 ,  C07D307/48

摘要： The present invention relates to a method for producing a furan-based compound using an ion exchange resin in the presence of an organic solvent. In the method for producing a furan-based compound according to the present invention, a furan-based compound is made from an aldose-type hexose compound in the presence of an organic solvent by using an anion exchange resin and a cation exchange resin. Thus, the aldose-type hexose compound obtained from biomass by simultaneously or consecutively using the anion/cation exchange resins as catalysts can be made into 5-hydroxymethyl-2-furfural (HMF) or alkyl ether derivatives thereof such as 5-alkoxymethyl-2-furfural (AMF) without using an expensive reagent. Also, since the selection of an organic solvent is not limitative and a heterogeneous catalyst can be used, separation and purification is easy and chemically stable AMF can be directly obtained. Further, the conversion efficiency of the aldose-type hexose compound is excellent, and the hexose compound can be used at a high concentration.

摘要翻译： 本发明涉及在有机溶剂存在下使用离子交换树脂生产呋喃类化合物的方法。 在本发明的呋喃类化合物的制造方法中，通过使用阴离子交换树脂和阳离子交换树脂，在有机溶剂的存在下，通过醛糖型己糖化合物制造呋喃系化合物。 因此，通过同时或连续使用阴离子/阳离子交换树脂作为催化剂从生物质获得的醛糖型己糖化合物可以制成5-羟甲基-2-糠醛（HMF）或其烷基醚衍生物，例如5-烷氧基甲基-2 （AMF），而不使用昂贵的试剂。 此外，由于有机溶剂的选择不是限制性的并且可以使用多相催化剂，所以分离和纯化容易，并且可以直接获得化学稳定的AMF。 此外，醛糖型己糖化合物的转化效率优异，可以高浓度使用己糖化合物。

公开(公告)号：US08795393B2

公开(公告)日：2014-08-05

申请号：US13320058

申请日：2010-04-15

申请人： Jin-Ku Cho ,  Sang-Yong Kim ,  Do-Hoon Lee ,  Bo-Ra Kim ,  Jae-Won Jung

发明人： Jin-Ku Cho ,  Sang-Yong Kim ,  Do-Hoon Lee ,  Bo-Ra Kim ,  Jae-Won Jung

IPC分类号： C10L1/18 ,  C07C69/66 ,  C07D307/50

CPC分类号： C07D233/24 ,  C07D307/48 ,  C07D307/50 ,  C10G2300/1014 ,  C10G2300/44 ,  C10L1/02 ,  C10L1/026 ,  Y02E50/13 ,  Y02P30/20

摘要： Disclosed is a method of preparing a petroleum-alternative bio fuel material such as 5-hydroxymethyl-2-furfural (HMF), 5-alkoxymethyl-2-furfural, levulinic acid alkil ester, etc. through a single process without saccharification, using a catalyst conversion reaction, from galactan that can be massively supplied at low costs and extracted from macroalgae of marine reusable resources.Thus, the macroalgae of the marine biomass resources is used so that a carbon source can be more easily extracted than that of a lignocellulosic biomass resource without a problem of having an effect on grain price like a crop-based biomass.

摘要翻译： 公开了一种通过没有糖化的单一方法制备石油替代生物燃料材料如5-羟甲基-2-糠醛（HMF），5-烷氧基甲基-2-糠醛，乙酰丙酸烷基酯等的方法，使用 催化剂转化反应，可以以低成本大量供应并从海洋可再利用资源的大型藻类中提取的半乳聚糖。 因此，使用海洋生物质资源的大型藻类，使得碳源比木质纤维素生物质资源更容易提取，而不会对谷物价格产生影响，如作物生物量。

公开(公告)号：US20080230762A1

公开(公告)日：2008-09-25

申请号：US12113846

申请日：2008-05-01

申请人： Joon-sang Park ,  Chang-ki Hong ,  Sang-yong Kim

发明人： Joon-sang Park ,  Chang-ki Hong ,  Sang-yong Kim

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall comprising a portion of the insulating layer by selectively etching a surface of the lower electrode relative to the insulating layer. A phase change memory layer is formed on the lower electrode. The phase change memory layer has a portion confined by the recess and surrounded by the insulating layer. An upper electrode is formed on the phase change memory layer. Phase change memory elements are also provided.

摘要翻译： 制造相变存储元件的方法包括在半导体衬底上形成绝缘层，形成穿透绝缘层的通孔，在通孔中形成下电极，并通过选择性地形成具有侧壁的凹部，该侧壁包括绝缘层的一部分 相对于绝缘层蚀刻下电极的表面。 在下电极上形成相变存储层。 相变存储层具有被凹部限制并被绝缘层包围的部分。 在相变存储层上形成上电极。 还提供相变存储元件。

公开(公告)号：US07390719B2

公开(公告)日：2008-06-24

申请号：US11497972

申请日：2006-08-01

申请人： Taek-Soo Jeon ,  Yu-Gyun Shin ,  Sang-Bom Kang ,  Hag-Ju Cho ,  Hye-Lan Lee ,  Sang-Yong Kim

发明人： Taek-Soo Jeon ,  Yu-Gyun Shin ,  Sang-Bom Kang ,  Hag-Ju Cho ,  Hye-Lan Lee ,  Sang-Yong Kim

IPC分类号： H01L21/8234

CPC分类号： H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78

摘要： A semiconductor device having a dual gate is formed on a substrate having a dielectric layer. A first metallic conductive layer is formed on the dielectric layer to a first thickness, and annealed to have a reduced etching rate. A second metallic conductive layer is formed on the first metallic conductive layer to a second thickness that is greater than the first thickness. A portion of the second metallic conductive layer formed in a second area of the substrate is removed using an etching selectivity. A first gate structure having a first metallic gate including the first and the second metallic conductive layers is formed in a first area of the substrate. A second gate structure having a second metallic gate is formed in the second area. A gate dielectric layer is not exposed to an etching chemical due to the first metallic conductive layer, so its dielectric characteristics are not degraded.

摘要翻译： 具有双栅极的半导体器件形成在具有电介质层的衬底上。 在电介质层上形成第一金属导电层至第一厚度，并且退火以降低蚀刻速率。 在第一金属导电层上形成第二金属导电层至大于第一厚度的第二厚度。 使用蚀刻选择性去除在衬底的第二区域中形成的第二金属导电层的一部分。 具有包括第一和第二金属导电层的第一金属栅极的第一栅极结构形成在衬底的第一区域中。 具有第二金属栅极的第二栅极结构形成在第二区域中。 由于第一金属导电层，栅极电介质层不暴露于蚀刻化学品，因此其介电特性不劣化。

公开(公告)号：US07322385B2

公开(公告)日：2008-01-29

申请号：US11158912

申请日：2005-06-22

申请人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

发明人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

IPC分类号： B65B1/04

CPC分类号： H01L21/67051 ,  H01L21/67034

摘要： An apparatus for drying a substrate using the Marangoni effect is disclosed. The apparatus includes a rotatable supporting portion on which a substrate is placed. A first nozzle for supplying de-ionized water and a second nozzle for supplying isopropyl alcohol vapor are provided on the supporting portion. When the isopropyl alcohol vapor is supplied to the center of the substrate at the initial stage, the amount of alcohol that reaches the substrate is controlled by a controlling portion such that the amount of the second liquid gradually increases.

摘要翻译： 公开了一种使用Marangoni效应对基板进行干燥的装置。 该装置包括可旋转的支撑部分，放置基板。 用于提供去离子水的第一喷嘴和用于提供异丙醇蒸气的第二喷嘴设置在支撑部分上。 当在初始阶段将异丙醇蒸汽供应到基材的中心时，通过控制部分控制到达基板的醇的量，使得第二液体的量逐渐增加。

公开(公告)号：US20070254425A1

公开(公告)日：2007-11-01

申请号：US11654543

申请日：2007-01-18

申请人： Sang-Yong Kim ,  Mong-Sup Lee ,  Chang-Ki Hong ,  Woo-Gwan Shim

发明人： Sang-Yong Kim ,  Mong-Sup Lee ,  Chang-Ki Hong ,  Woo-Gwan Shim

IPC分类号： H01L21/8238

CPC分类号： H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1052

摘要： Example embodiments of the present invention relates to methods of fabricating a semiconductor device. Other example embodiments of the present invention relate to methods of fabricating a semiconductor device using a metal nitride layer as a gate electrode. The methods may include providing a semiconductor substrate having a first region and a second region. A gate insulating layer, a metal nitride layer and/or an amorphous carbon layer may be sequentially formed on the substrate. The amorphous carbon layer may be selectively etched, forming an amorphous carbon mask covering the first region. The metal nitride layer, exposed by the amorphous carbon mask, may be etched, forming a preliminary metal nitride pattern. The amorphous carbon mask may be removed.

摘要翻译： 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其他示例性实施例涉及使用金属氮化物层作为栅电极制造半导体器件的方法。 所述方法可以包括提供具有第一区域和第二区域的半导体衬底。 可以在衬底上依次形成栅极绝缘层，金属氮化物层和/或非晶碳层。 可以选择性地蚀刻无定形碳层，形成覆盖第一区域的无定形碳掩模。 可以蚀刻由非晶碳掩模曝光的金属氮化物层，形成初步的金属氮化物图案。 可以除去无定形碳掩模。

公开(公告)号：US07105475B2

公开(公告)日：2006-09-12

申请号：US10859815

申请日：2004-06-03

申请人： Sang-Yong Kim ,  Sang-Jun Choi ,  Chang-Ki Hong

发明人： Sang-Yong Kim ,  Sang-Jun Choi ,  Chang-Ki Hong

IPC分类号： C11D1/00 ,  C11D3/02 ,  C11D3/24 ,  C11D3/20

CPC分类号： C23F1/16 ,  C11D3/042 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76805 ,  H01L21/76814

摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

公开(公告)号：US20060172907A1

公开(公告)日：2006-08-03

申请号：US11341412

申请日：2006-01-30

申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim ,  Kui-Jong Baek ,  Sung-Bae Kim ,  Hyun-Tak Kim ,  Sang-Won Lee ,  Woong Han ,  Jung-Hun Lim

发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim ,  Kui-Jong Baek ,  Sung-Bae Kim ,  Hyun-Tak Kim ,  Sang-Won Lee ,  Woong Han ,  Jung-Hun Lim

IPC分类号： C11D7/32

CPC分类号： C11D3/042 ,  C11D3/30 ,  C11D3/33 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047

摘要： According to an example embodiment of the present invention, the microelectronic cleaning agent may include a fluoride component, an acid component, a chelating agent, a surfactant and water. Example embodiments of the present invention provide a microelectronic cleaning agent which can selectively remove, for example, a high-k dielectric layer. The microelectronic cleaning agent includes from about 0.001 weight % to about 10 weight % of a fluoride component, from about 0.001 weight % to about 30 weight % of an acid component, from about 0.001 weight % to about 20 weight % of a chelating agent, from about 0.001 weight % to about 10 weight % of a surfactant, and water (H2O). The water may comprise the remainder of the cleaning agent. According to another embodiment of the present invention, a method of fabricating a semiconductor device using the microelectronic cleaning agent is also provided.

摘要翻译： 根据本发明的示例性实施方案，微电子清洗剂可以包括氟化物组分，酸组分，螯合剂，表面活性剂和水。 本发明的示例性实施方案提供了可以选择性地除去例如高k电介质层的微电子清洁剂。 微电子清洁剂包括约0.001重量％至约10重量％的氟化物组分，约0.001重量％至约30重量％的酸组分，约0.001重量％至约20重量％的螯合剂， 约0.001重量％至约10重量％的表面活性剂和水（H 2 O 2）。 水可以包括剩余的清洁剂。 根据本发明的另一实施例，还提供了使用微电子清洁剂制造半导体器件的方法。

公开(公告)号：US20060027252A1

公开(公告)日：2006-02-09

申请号：US11193088

申请日：2005-07-29

申请人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Hyung-Ho Ko ,  Sang-Yong Kim

发明人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Hyung-Ho Ko ,  Sang-Yong Kim

IPC分类号： B08B3/00

CPC分类号： B08B3/08 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/3212

摘要： The present invention provides methods of processing a substrate by contacting the substrate with an inorganic solution including an organic additive, rinsing the substrate with an organic alcohol, and rinsing the substrate with deionized water. Related substrates and devices are also disclosed.

摘要翻译： 本发明提供了通过使基材与包括有机添加剂的无机溶液接触，用有机醇漂洗该基材并用去离子水冲洗该基材来处理基材的方法。 还公开了相关的基板和装置。