MAGNETO-RESISTIVE EFFECT ELEMENT WITH RECESSED ANTIFERROMAGNETIC LAYER
    41.
    发明申请
    MAGNETO-RESISTIVE EFFECT ELEMENT WITH RECESSED ANTIFERROMAGNETIC LAYER 有权
    具有残留抗真菌层的磁电阻效应元件

    公开(公告)号:US20160293187A1

    公开(公告)日:2016-10-06

    申请号:US14672638

    申请日:2015-03-30

    CPC classification number: G11B5/3912 G01R33/098 G11B5/398 G11B2005/3996

    Abstract: A magneto-resistive effect element has a first shield layer, a second layer, and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer, a first pinned layer, a nonmagnetic spacer layer, a second pinned layer that fixes a magnetization direction of the first pinned layer, and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer is positioned away from an air bearing surface (ABS). The second pinned layer has a first part that is positioned away from the ABS, and a second part that makes contact with the first part, and that extends to the ABS parallel to the first pinned layer; and the first part has a first layer that makes contact with the antiferromagnetic layer, a second layer that makes contact with the second part, and a layer that is positioned between the first layer and the second layer, and that exchange-couples the first layer and the second layer in an anti-parallel orientation.

    Abstract translation: 磁阻效应元件具有第一屏蔽层,第二层和位于第一屏蔽层和第二屏蔽层之间的多层膜。 多层膜具有自由层,第一被钉扎层,非磁性间隔层,固定第一被钉扎层的磁化方向的第二固定层和与第二被钉扎层交换耦合的反铁磁层。 反铁磁层位于远离空气轴承表面(ABS)的位置。 第二被钉扎层具有远离ABS定位的第一部分和与第一部分接触并且平行于第一被钉扎层延伸到ABS的第二部分; 并且第一部分具有与反铁磁层接触的第一层,与第二部分接触的第二层和位于第一层和第二层之间的层,并且将第一层 并且第二层处于反平行取向。

    THIN FILM MAGNETIC HEAD WITH SIDE LAYERS UNDER COMPRESSION STRESS
    42.
    发明申请
    THIN FILM MAGNETIC HEAD WITH SIDE LAYERS UNDER COMPRESSION STRESS 有权
    薄膜电磁头与压缩应力下的侧层

    公开(公告)号:US20140293473A1

    公开(公告)日:2014-10-02

    申请号:US13853293

    申请日:2013-03-29

    CPC classification number: G11B5/3932 B82Y10/00 G11B5/3909 G11B2005/3996

    Abstract: A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

    Abstract translation: 薄膜磁头包括自旋阀膜,其包括磁化自由层,磁化固定层和设置在无磁化和被钉扎层之间的非磁性间隔层,以及设置在两者的一对侧层 自旋阀膜的边缘在磁道宽度方向上并且至少在磁化自由层和磁化固定层附近。 每个侧层具有偏置磁场施加层,该偏置磁场施加层包括软磁性层,并且在轨道宽度方向上向磁化自由层施加偏置磁场,并且位于自旋阀膜与偏置之间的间隙层 磁场施加层,并且侧层至少在磁化钉扎层附近具有压应力。

    CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC DISK DEVICE
    43.
    发明申请
    CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC DISK DEVICE 有权
    CPP型磁阻效应元件和磁盘设备

    公开(公告)号:US20140268405A1

    公开(公告)日:2014-09-18

    申请号:US13842948

    申请日:2013-03-15

    Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.

    Abstract translation: 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分,上屏蔽层和下屏蔽层 部分来自上方和下方,并且处于与层叠方向施加感测电流的垂直于平面(CPP)结构的电流。 磁阻效应部分包括非磁性中间层,并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构,其中它们的磁化为 分别相对于轨道宽度方向倾斜,上屏蔽层和下屏蔽层的磁化相互大致正交,第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合, 位于所述第一铁磁层和所述上屏蔽层之间,并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。

    SENSOR
    44.
    发明申请
    SENSOR 有权

    公开(公告)号:US20250060428A1

    公开(公告)日:2025-02-20

    申请号:US18932913

    申请日:2024-10-31

    Abstract: A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

    MAGNETIC SENSOR DEVICE AND MAGNETIC SENSOR SYSTEM

    公开(公告)号:US20250060425A1

    公开(公告)日:2025-02-20

    申请号:US18938803

    申请日:2024-11-06

    Abstract: A magnetic sensor device includes a first chip including a first magnetic sensor, a second chip including a second magnetic sensor and a third magnetic sensor, and a support having a reference plane. The first magnetic sensor includes at least one first magnetic detection element, and detects a first component of an external magnetic field. The second magnetic sensor includes at least one second magnetic detection element, and detects a second component of the external magnetic field. The third magnetic sensor includes at least one third magnetic detection element, and detects a third component of the external magnetic field. The first chip and the second chip are mounted on the reference plane.

    SENSOR
    46.
    发明公开
    SENSOR 审中-公开

    公开(公告)号:US20240094313A1

    公开(公告)日:2024-03-21

    申请号:US18524904

    申请日:2023-11-30

    CPC classification number: G01R33/093 G01R33/0047

    Abstract: A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a first layer and a second layer, and also includes first and second inclined surfaces formed across the first layer and the second layer. Each of the first and second MR elements includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization pinned layer and the free layer of the second MR element are disposed on the second inclined surface.

    MAGNETIC FIELD DETECTION APPARATUS
    47.
    发明申请

    公开(公告)号:US20230092757A1

    公开(公告)日:2023-03-23

    申请号:US17946817

    申请日:2022-09-16

    Abstract: A magnetic field detection apparatus includes a substrate, first and second projections, first and second MR films, and first and second wiring lines. The first and second projections are provided on a flat surface of the substrate and each include first and second inclined surfaces. The first and second MR films are provided on the first and second inclined surfaces, respectively. The first wiring line couples the first MR film on the first inclined surface of the first projection and the first MR film on the first inclined surface of the second projection to each other. The second wiring line couples the second MR film on the second inclined surface of the first projection and the second MR film on the second inclined surface of the second projection to each other. The first and second wiring lines intersect on the first inclined surface, the second inclined surface, or both.

    MAGNETIC FIELD DETECTION APPARATUS
    48.
    发明申请

    公开(公告)号:US20230091010A1

    公开(公告)日:2023-03-23

    申请号:US17946838

    申请日:2022-09-16

    Abstract: A magnetic field detection apparatus includes first and second projections that are provided on a flat surface of a substrate and that each include first and second inclined surfaces. First and second MR films are provided on the first and second inclined surfaces, respectively. A first wiring line couples the first MR films provided on the respective first inclined surfaces of the first and second projections. A second wiring line couples the second MR films provided on the respective second inclined surfaces of the first and second projections. The first and second projections are adjacent in a first direction, with the first inclined surface of the first projection and the second inclined surface of the second projection opposed to each other in the first direction. One or more patterns are provided on the first inclined surface of the first projection, the second inclined surface of the second projection, or both.

    SENSOR
    49.
    发明申请
    SENSOR 有权

    公开(公告)号:US20230086730A1

    公开(公告)日:2023-03-23

    申请号:US17945514

    申请日:2022-09-15

    Abstract: A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a protruding surface including first and second inclined surfaces. Each of the first and second MR elements includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization pinned layer and the free layer of the second MR element are disposed on the second inclined surface. The dimension of the protruding surface in a direction parallel to the Z direction is in the range of 1.4 µm to 3.0 µm.

    MAGNETIC SENSOR AND MAGNETIC SENSOR SYSTEM

    公开(公告)号:US20230068352A1

    公开(公告)日:2023-03-02

    申请号:US17896859

    申请日:2022-08-26

    Abstract: A magnetic sensor includes a first path and a second path, a plurality of structures, and a plurality of first electrodes and a plurality of second electrodes. The first path includes at least one first array. The second path includes at least one second array. The at least one first array and the at least one second array are disposed so that they are arranged in a first direction. The at least one first array and the at least one second array each include an odd number of structures disposed so that they are arranged in a second direction.

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