公开(公告)号：US5692018A

公开(公告)日：1997-11-25

申请号：US630527

申请日：1996-04-10

申请人： Shingo Okamoto

发明人： Shingo Okamoto

IPC分类号： H04B1/10 ,  H04B7/02 ,  H04L25/03 ,  H04B7/08 ,  H04L27/22

CPC分类号： H04L25/03057

摘要： An interference canceler comprises a first complex multiplier for multiplying a signal recovered from a quadrature modulated carrier by a first correlation value, and a second complex multiplier for multiplying a delayed version of the recovered signal by a second correlation value. The outputs of the multipliers are additively combined in an adder and subtractively combined in a subtractor. The output of the adder is amplified by an AGC amplifier to produce a reference signal representative of the envelope of the adder output. First correlation between the recovered signal and the reference signal is detected and the first correlation value is derived therefrom and second correlation is detected between the delayed version of the recovered signal and the reference signal and the second correlation value is derived therefrom. One of the outputs of the amplifier and the subtractor is selected by a selector. A decision feedback equalizer operates on the output of the selector to produce a decision output and a decision error. The decision error is compared with a threshold value and the selector is controlled depending on whether the decision error is higher or lower than the threshold value.

摘要翻译： 干扰消除器包括用于将从正交调制载波恢复的信号乘以第一相关值的第一复数乘法器和用于将恢复信号的延迟版本乘以第二相关值的第二复数乘法器。 乘法器的输出在加法器中相加组合，并在减法器中相减。 加法器的输出由AGC放大器放大，以产生表示加法器输出的包络的参考信号。 检测恢复信号和参考信号之间的第一相关性，并且从其导出第一相关值，并且在恢复信号的延迟版本与参考信号之间检测到第二相关，并从其导出第二相关值。 放大器和减法器的输出之一由选择器选择。 决策反馈均衡器对选择器的输出进行操作，以产生决策输出和决策误差。 将判定误差与阈值进行比较，并且根据判定误差是高于还是低于阈值来控制选择器。

公开(公告)号：US5252670A

公开(公告)日：1993-10-12

申请号：US974770

申请日：1992-11-12

申请人： Chiaki Sagawa ,  Eiji Shimada ,  Shingo Okamoto

发明人： Chiaki Sagawa ,  Eiji Shimada ,  Shingo Okamoto

IPC分类号： C08G18/08 ,  C08G18/16 ,  C08G18/24 ,  C08G18/42 ,  C08G18/80 ,  C09D5/46

CPC分类号： C08G18/42 ,  C08G18/089 ,  C08G18/161 ,  C08G18/24 ,  C08G18/8061 ,  C08G2150/20 ,  Y10T428/31605

摘要： A powder coating composition comprises 100 weight parts of the total of a polyester resin having a hydroxyl value in the range from 20 to 100 KOH mg/g and a blocked polyisocyanate compound, 0.01 to 3 weight parts of an organotin compound and 0.01 to 10 weight parts of a carboxylic acid compound having an acid value of 1000 KOH mg/g or less which can form a complex compound by reaction with the organotin compound. The amount of the polyester resin is in the range from 95 to 50 weight % and the amount of the blocked polyisocyanate compound is in the range from 5 to 50 weight % respectively based on the total of the polyester resin and the blocked polyisocyanate compound. A precoat steel plate is prepared by coating the powder coating composition described above on a steel plate by a electrostatic powder coating method to form a coating layer having a thickness in the range from 20 to 120 .mu.m and curing the coating composition by baking at a temperature in the range from 190.degree. to 300.degree. C. for a time in the range from 20 seconds to 10 minutes. The powder coating composition can be cured without formation of blisters and pin holes under a desired condition by controlling the rate of the curing reaction.

公开(公告)号：US5114498A

公开(公告)日：1992-05-19

申请号：US502837

申请日：1990-03-30

申请人： Shingo Okamoto ,  Tsuyoshi Takahama ,  Masato Nishikuni ,  Shoichi Nakano

发明人： Shingo Okamoto ,  Tsuyoshi Takahama ,  Masato Nishikuni ,  Shoichi Nakano

IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/0747 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03767 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device includes a substrate (1, 10) having a conductive electrode (2, 10), and a first semiconductor layer (3.sub.1, 11.sub.1) of a first conductivity type, a substantially intrinsic second semiconductor layer (3.sub.2, 11.sub.2) and a third semiconductor layer (3.sub.3, 11.sub.3) of the opposite conductivity type successively deposited on the conductive electrode. The hydrogen content in at least the first and second semiconductor layer (3.sub.1, 11.sub.1) is 10% or less. At least the second semiconductor layer (3.sub.2, 11.sub.2), is made of an amorphous semiconductor layer.

摘要翻译： 光电器件包括具有导电电极（2,10）的衬底（1,10）和第一导电类型的第一半导体层（31,111），基本上本征的第二半导体层（32,112）和 连续地沉积在导电电极上的相反导电类型的第三半导体层（33,113）。 至少第一和第二半导体层（31,111）中的氢含量为10％以下。 至少第二半导体层（32,112）由非晶半导体层制成。