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    SURFACE PLASMON ANTENNA WITH PROPAGATION EDGE AND NEAR-FIELD LIGHT GENERATING ELEMENT
    41.
    发明申请
    SURFACE PLASMON ANTENNA WITH PROPAGATION EDGE AND NEAR-FIELD LIGHT GENERATING ELEMENT 有权
    具有传播边缘和近场光生成元件的表面等离子体天线

    公开(公告)号：US20100103553A1

    公开(公告)日：2010-04-29

    申请号：US12260639

    申请日：2008-10-29

    申请人： Koji Shimazawa ,  Eiji Komura ,  Yasuhiro Ito ,  Seiichi Takayama ,  Satoshi Tomikawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

    发明人： Koji Shimazawa ,  Eiji Komura ,  Yasuhiro Ito ,  Seiichi Takayama ,  Satoshi Tomikawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

    IPC分类号： G11B5/02 ,  G21G4/00

    CPC分类号： G11B5/314 ,  B82Y20/00 ,  G02B6/1226 ,  G11B5/4866 ,  G11B2005/001 ,  G11B2005/0021

    摘要： Provided is a surface plasmon antenna that can be set so that the emitting position on the end surface of the plasmon antenna where near-field light is emitted is located sufficiently close to the end of a magnetic pole. The surface plasmon antenna comprises an edge having a portion for coupling with a light in a surface plasmon mode. The edge is provided for propagating surface plasmon excited by the light and extends from the portion to a near-field light generating end surface that emits near-field light. The edge for propagating surface plasmon is a very narrow propagation region. Therefore, the near-field light generating end surface, which appears as a polished surface processed through polishing in the manufacturing of the plasmon antenna, can be made a shape with a very small size, and further can be set so that surface plasmon propagates to reach the end surface reliably.

    摘要翻译： 提供了一种表面等离子体激元天线，其可以被设置为使得发射近场光的等离子体激元天线的端面上的发射位置足够靠近磁极的端部。 表面等离子体激元天线包括具有用于与表面等离子体激元模式的光耦合的部分的边缘。 该边缘用于传播由光激发的表面等离子体激元，并从该部分延伸到发射近场光的近场光产生端面。 传播表面等离子体激元的边缘是非常窄的传播区域。 因此，通过在等离子体激元天线的制造中通过研磨处理的抛光面的近场光产生端面可以形成为非常小的形状，并且还可以将表面等离子体激元传播到 可靠地到达端面。

    Near-field light generating element utilizing surface plasmon
    42.
    发明授权
    Near-field light generating element utilizing surface plasmon 有权
    利用表面等离子体激元的近场光产生元件

    公开(公告)号：US08000178B2

    公开(公告)日：2011-08-16

    申请号：US12260639

    申请日：2008-10-29

    申请人： Koji Shimazawa ,  Eiji Komura ,  Yasuhiro Ito ,  Seiichi Takayama ,  Satoshi Tomikawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

    发明人： Koji Shimazawa ,  Eiji Komura ,  Yasuhiro Ito ,  Seiichi Takayama ,  Satoshi Tomikawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

    IPC分类号： G11B11/00

    CPC分类号： G11B5/314 ,  B82Y20/00 ,  G02B6/1226 ,  G11B5/4866 ,  G11B2005/001 ,  G11B2005/0021

    摘要： Provided is a surface plasmon antenna that can be set so that the emitting position on the end surface of the plasmon antenna where near-field light is emitted is located sufficiently close to the end of a magnetic pole. The surface plasmon antenna comprises an edge having a portion for coupling with a light in a surface plasmon mode. The edge is provided for propagating surface plasmon excited by the light and extends from the portion to a near-field light generating end surface that emits near-field light. The edge for propagating surface plasmon is a very narrow propagation region. Therefore, the near-field light generating end surface, which appears as a polished surface processed through polishing in the manufacturing of the plasmon antenna, can be made a shape with a very small size, and further can be set so that surface plasmon propagates to reach the end surface reliably.

    摘要翻译： 提供了一种表面等离子体激元天线，其可以被设置为使得发射近场光的等离子体激元天线的端面上的发射位置足够靠近磁极的端部。 表面等离子体激元天线包括具有用于与表面等离子体激元模式的光耦合的部分的边缘。 该边缘用于传播由光激发的表面等离子体激元，并从该部分延伸到发射近场光的近场光产生端面。 传播表面等离子体激元的边缘是非常窄的传播区域。 因此，通过在等离子体激元天线的制造中通过研磨处理的抛光面的近场光产生端面可以形成为非常小的形状，并且还可以将表面等离子体激元传播到 可靠地到达端面。

    Thermally-assisted magnetic recording head and thermally-assisted magnetic recording method
    43.
    发明授权
    Thermally-assisted magnetic recording head and thermally-assisted magnetic recording method 有权
    热辅助磁记录头和热辅助磁记录方法

    公开(公告)号：US07885029B2

    公开(公告)日：2011-02-08

    申请号：US12423269

    申请日：2009-04-14

    申请人： Daisuke Miyauchi ,  Susumu Aoki ,  Seiichi Takayama ,  Koji Shimazawa ,  Tetsuya Roppongi

    发明人： Daisuke Miyauchi ,  Susumu Aoki ,  Seiichi Takayama ,  Koji Shimazawa ,  Tetsuya Roppongi

    IPC分类号： G11B5/02

    CPC分类号： G11B5/314 ,  G11B5/3116 ,  G11B5/6088 ,  G11B2005/0005 ,  G11B2005/0021

    摘要： A head capable of favorite thermally-assisted magnetic recording without depending on the use of a near-field light generator is provided. The head comprises a write head element formed on the trailing side from a waveguide and comprising a first main pole. The first main pole and the waveguide are opposed to each other through a first clad layer, and a second clad layer is provided on a rear side from the first main pole. This gives that the end surface of the waveguide can be placed much close to the end surface of the first main pole apart by only a thickness of the first clad layer. As a result, the end surface of the first main pole can apply a sufficient intensity of write field to the intensity center and its vicinity of the light spot formed on the magnetic recording layer.

    摘要翻译： 提供了一种能够不依赖于近场光发生器的使用的热辅助磁记录的头部。 头包括形成在波导的后侧并包括第一主极的写头元件。 第一主极和波导通过第一覆盖层彼此相对，并且第二覆盖层设置在从第一主极的后侧。 这使得波导的端面可以被放置得非常靠近第一主极的端表面，只有第一覆盖层的厚度分开。 结果，第一主极的端面可以对形成在磁记录层上的光点的强度中心及其附近施加足够强的写入场。

    PLASMON ANTENNA AND HEAT-ASSISTED MAGNETIC RECORDING HEAD
    45.
    发明申请
    PLASMON ANTENNA AND HEAT-ASSISTED MAGNETIC RECORDING HEAD 有权
    PLASMON天线和热辅助磁记录头

    公开(公告)号：US20100079895A1

    公开(公告)日：2010-04-01

    申请号：US12239141

    申请日：2008-09-26

    申请人： Seiichi Takayama ,  Eiji Komura ,  Kosuke Tanaka ,  Daisuke Miyauchi ,  Koji Shimazawa

    发明人： Seiichi Takayama ,  Eiji Komura ,  Kosuke Tanaka ,  Daisuke Miyauchi ,  Koji Shimazawa

    IPC分类号： G11B5/02 ,  G21G4/00 ,  G11B5/48

    CPC分类号： G11B5/314 ,  G11B5/3116 ,  G11B7/122 ,  G11B7/1387 ,  G11B11/10536 ,  G11B2005/0005 ,  G11B2005/0021

    摘要： Provided is a plasmon antenna in which a near-field light having a sufficient intensity is generated only in a desired location. The plasmon antenna comprises an end surface on a side where a near-field light is generated; the end surface is flat and has a shape with at least three vertexes or rounded corners; and an end surface of the plasmon antenna which is opposite to the flat end surface and receives light, is inclined with respect to the flat end surface so as to become closer to the flat end surface toward one of the at least three vertexes or rounded corners. When the light-receiving end surface of the plasmon antenna is irradiated with the light, a near-field light having a sufficient intensity can be generated at only the vertex or rounded corner toward which the entire plasmon antenna becomes thinner.

    摘要翻译： 提供了一种等离子体激元天线，其中仅在期望的位置产生具有足够强度的近场光。 等离子体激元天线包括在产生近场光的一侧上的端面; 端面平坦，具有至少三个顶点或圆角的形状; 以及等离子体激元天线的与平坦端面相对并且接收光的端面相对于平坦端面倾斜，以朝着至少三个顶点或圆角中的一个变得更靠近平坦端面 。 当等离子体激元的光接收端面用光照射时，只能在整个等离子体天线变薄的顶点或圆角处产生具有足够强度的近场光。

    Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer
    47.
    发明授权
    Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer 有权
    具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层

    公开(公告)号：US07782575B2

    公开(公告)日：2010-08-24

    申请号：US11698180

    申请日：2007-01-26

    申请人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

    发明人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

    IPC分类号： G11B5/39

    CPC分类号： G11B5/59683 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

    摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.

    摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Ω·Ω·cm 2，间隔层的导电率为133〜432S / cm。

    Method for manufacturing magnetic field detecting element, utilizing diffusion of metal
    48.
    发明授权
    Method for manufacturing magnetic field detecting element, utilizing diffusion of metal 有权
    利用金属扩散制造磁场检测元件的方法

    公开(公告)号：US07672092B2

    公开(公告)日：2010-03-02

    申请号：US11708537

    申请日：2007-02-21

    申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

    发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  H01L43/12 ,  Y10T428/1121

    摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.

    摘要翻译： 一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层 这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。 间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或由 其合金。

    CPP type magneto-resistive effect device having a semiconductor oxide spacer layer and magnetic disk system
    49.
    发明授权
    CPP type magneto-resistive effect device having a semiconductor oxide spacer layer and magnetic disk system 有权
    具有半导体氧化物间隔层和磁盘系统的CPP型磁阻效应器件

    公开(公告)号：US07672085B2

    公开(公告)日：2010-03-02

    申请号：US11626562

    申请日：2007-01-24

    申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

    发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

    IPC分类号： G11B5/39

    CPC分类号： G11B5/4826 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.

    摘要翻译： 本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠， 它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层， 其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3）制成，或者半导体氧化物层包含氧化铟（In 2 O 3）作为其主要成分，并且包含含有SnO 4的四价阳离子的氧化物 作为主要成分的氧化铟。 因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性 的电影特色。