公开(公告)号：US5484484A

公开(公告)日：1996-01-16

申请号：US269039

申请日：1994-06-30

申请人： Kenichi Yamaga ,  Yuichi Mikata ,  Akihito Yamamoto

发明人： Kenichi Yamaga ,  Yuichi Mikata ,  Akihito Yamamoto

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  C23C16/00

CPC分类号： C23C16/4409 ,  C23C16/345 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56

摘要： An Si.sub.3 N.sub.4 layer is formed on a surface of a wafer, which is an object to be processed, at a high temperature of, for example, 780.degree. C., using a vertical thermal processing apparatus having a reaction tube of a double-wall structure comprising an inner tube and an outer tube in which a predetermined reduced-pressure status is maintained within the reaction tube while a reaction gas comprising, for example, SiH.sub.2 Cl.sub.2 and NH.sub.3 is made to flow from an inner side to an outer side of the inner tube by the action of a first gas supply pipe and first exhaust pipe provided in the thermal processing apparatus. Next, the temperature in the interior of the reaction tube is raised to, for example, 1000.degree. C., a reaction gas comprising, for example, H.sub.2 O vapor and HCl is made to flow from the outer side to the inner side of the inner tube by the action of a second gas supply pipe and second exhaust pipe, and an SiO.sub.2 layer is formed by the oxidation of the surface of the Si.sub.3 N.sub.4 layer formed on the surface of the wafer, under normal-pressure conditions. The use of a combined chamber enables the implementation of film formation and either oxidation or diffusion processing without having to remove the object to be processed from the reaction tube, and thus prevents the intrusion of a natural oxide layer or the incorporation of particles into a thin film structure of, for example, SiO.sub.2 and Si.sub.3 N.sub.4 layers used as a multi-layer insulating film for devices such as DRAMs.

摘要翻译： 使用具有双壁结构的反应管的垂直热处理装置，在作为被处理物的晶片的表面上，例如在780℃的高温下形成Si 3 N 4层 包括内管和外管，其中在反应管内保持预定的减压状态，同时使包括例如SiH 2 Cl 2和NH 3的反应气体从内管的内侧流到外管 通过设置在热处理装置中的第一气体供给管和第一排气管的作用。 接下来，将反应管内部的温度升高至例如1000℃，由例如H 2 O蒸气和HCl构成的反应气体从内侧的内侧流向内侧 通过第二气体供给管和第二排气管的作用，通过在常压条件下氧化形成在晶片表面上的Si 3 N 4层的表面形成SiO 2层。 使用组合室能够实现成膜和氧化或扩散处理，而不必从反应管中除去待处理的物体，从而防止天然氧化物层的侵入或将颗粒引入薄的 例如用作用于诸如DRAM的器件的多层绝缘膜的SiO 2和Si 3 N 4层的膜结构。

公开(公告)号：US09099505B2

公开(公告)日：2015-08-04

申请号：US12881556

申请日：2010-09-14

申请人： Yoshinori Kusakabe ,  Kenichi Yamaga

发明人： Yoshinori Kusakabe ,  Kenichi Yamaga

IPC分类号： F27D15/02 ,  F28D15/00 ,  C23C16/46 ,  H01L21/67 ,  C30B25/10 ,  C30B35/00

CPC分类号： H01L21/67109 ,  C30B25/10 ,  C30B35/00

摘要： A thermal processing apparatus including: a cylindrical processing vessel; a support unit to be loaded into and unloaded from the vessel; and a heating furnace surrounding an outer periphery of the vessel, with a cooling space therebetween. The furnace is connected to a cooling-gas introduction unit, including a gas introduction passage to which a blowing fan is connected, for introducing a cooling gas into the cooling space during a temperature lowering operation after a thermal process. The furnace is connected to a cooling-gas discharge unit, including a heat exchanger, a suction fan, and a gas discharge passage, for discharging the cooling gas of a raised temperature from the cooling space. Connected to the gas discharge passage at a position upstream of the heat exchanger is a temperature-lowering gas introduction unit for introducing a temperature-lowering gas to the cooling gas of a raised temperature so as to lower its temperature.

摘要翻译： 一种热处理设备，包括：圆柱形处理容器; 支撑单元，其被装载和卸载; 以及围绕容器的外周的加热炉，其间具有冷却空间。 炉子连接到冷却气体引入单元，该冷却气体引入单元包括连接有吹风扇的气体引入通道，用于在热处理之后的降温操作期间将冷却气体引入冷却空间。 炉子连接到冷却气体排出单元，该冷却气体排出单元包括热交换器，抽吸风扇和气体排出通道，用于将升温的冷却气体从冷却空间排出。 在该热交换器上游的位置与气体排出通路连接的是降温气体引入单元，用于将降温气体导入升温温度降低的气体，降低其温度。

公开(公告)号：US08089031B2

公开(公告)日：2012-01-03

申请号：US12071816

申请日：2008-02-26

申请人： Kenichi Yamaga

发明人： Kenichi Yamaga

IPC分类号： F27B5/18 ,  F27D19/00 ,  G01K1/14 ,  G01K7/32 ,  H01L21/02 ,  H01L21/66

CPC分类号： F27B17/0025 ,  H01L21/67109 ,  H01L21/67248

摘要： The present invention provides a heating apparatus for heating objects to be processed, which can detect a temperature of the objects to be processed with higher precision and accuracy, thereby to achieve higher precision temperature control. A heating apparatus 2 includes a processing vessel 8 configured to contain therein a plurality of objects W to be processed, the objects W including objects 58a to 58e to be processed for temperature measurement, each object 58a to 58e having each corresponding elastic wave element 60a to 60e, a heating means 10 adapted for heating the objects W to be processed, and a holding means 22 adapted to hold the objects W to be processed. To the processing vessel 8, a transmitter antenna 52 adapted to transmit an electric wave for measurement toward each elastic wave element 60a to 60e, and a receiver antenna 52 adapted to receive an electric wave having a frequency corresponding to the temperature and generated from each elastic wave element 60a to 60e are provided. A temperature analyzer 66 adapted to obtain the temperature of the wafers W to be processed for temperature measurement is connected with the receiver antenna 52, and a temperature control unit 64 adapted to control the heating means 10 is in turn connected with the temperature analyzer 66.

摘要翻译： 本发明提供一种用于加热待加工物体的加热装置，其能够以更高的精度和精度检测待加工物体的温度，从而实现更高精度的温度控制。 加热装置2包括处理容器8，其被配置为在其中容纳有待处理的多个物体W，物体W包括要进行温度测量的物体58a至58e，每个物体58a至58e具有每个对应的弹性波元件60a至 如图60e所示，适用于加热待处理物体W的加热装置10以及适于保持要处理物体W的保持装置22。 对于处理容器8，适于向每个弹性波元件60a至60e发送用于测量的电波的发射器天线52和适于接收具有与温度相对应的频率并由每个弹性体产生的频率的电波的接收器天线52 波元件60a至60e。 用于获得用于温度测量的待处理的晶片W的温度的温度分析器66与接收器天线52连接，并且适于控制加热装置10的温度控制单元64又与温度分析器66连接。

公开(公告)号：US08080767B2

公开(公告)日：2011-12-20

申请号：US12481754

申请日：2009-06-10

申请人： Kenichi Yamaga ,  Wenling Wang

发明人： Kenichi Yamaga ,  Wenling Wang

IPC分类号： F27B5/18 ,  F27D19/00 ,  G01K1/14 ,  G01K7/32 ,  H01L21/02 ,  H01L21/66

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： A thermal processing apparatus comprising a processing vessel containing, in addition to a plurality of objects subject to heat treatment, an acoustic wave device for temperature measurement. A holding unit holds the plurality of objects to be processed and an object for temperature measurement utilizing an acoustic wave device. A heating unit heats the objects to be processed and the object for temperature measurement. A first conductive member functions as an antenna for transmitting an electromagnetic wave toward the acoustic wave device in the processing vessel; a second conductive member functions as a receiver antenna for receiving an electromagnetic wave dependent on a temperature of the acoustic wave device which is emitted from the acoustic wave device. A temperature analysis part obtains a temperature of the object based on the electromagnetic wave received by the receiver antenna, and a temperature control part controls the heating unit. The first and second conductive members are each part of the thermal processing parts in the processing vessel.

摘要翻译： 一种热处理装置，包括处理容器，除了经受热处理的多个物体之外，还包括用于温度测量的声波装置。 保持单元保持要处理的多个物体和使用声波装置的温度测量对象。 加热单元加热要处理的物体和物体进行温度测量。 第一导电构件用作用于向处理容器中的声波装置传输电磁波的天线; 第二导电构件用作接收天线，用于接收根据从声波装置发射的声波装置的温度的电磁波。 温度分析部基于由接收天线接收到的电磁波获得被摄体的温度，温度控制部控制加热单元。 第一和第二导电构件是处理容器中的热处理部件的每一部分。

公开(公告)号：US20090311807A1

公开(公告)日：2009-12-17

申请号：US12481754

申请日：2009-06-10

申请人： Kenichi Yamaga ,  Wenling Wang

发明人： Kenichi Yamaga ,  Wenling Wang

IPC分类号： H01L21/465 ,  H01L21/02 ,  H01L21/46

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： The present invention is a thermal processing apparatus comprising: a processing vessel capable of being evacuated, the processing vessel also being capable of accommodating, in addition to a plurality of objects, an object for temperature measurement equipped with an elastic wave device; a holding unit configured to be loaded into and unloaded from the processing vessel, while the holding unit holding the plurality of objects to be processed and the object for temperature measurement; a gas introduction unit configured to introduce a gas into the processing vessel; a heating unit configured to heat the plurality of objects to be processed and the object for temperature measurement that are accommodated in the processing vessel; a first conductive member configured to function as a transmitter antenna connected to a transmitter through a radiofrequency line, for transmitting an electric wave for measurement toward the elastic wave device accommodated in the processing vessel; a second conductive member configured to function as a receiver antenna connected to a receiver through a radiofrequency line, for receiving an electric wave dependent on a temperature of the elastic wave device which is emitted from the elastic wave device accommodated in the processing vessel; a temperature analysis part configured to obtain a temperature of the object for temperature measurement based on the electric wave received by the receiver antenna; and a temperature control part configured to control the heating unit; wherein: the first conductive member is disposed as a part of a thermal processing part in the processing vessel; and the second conductive member is disposed as a part of a thermal processing part in the processing vessel.

摘要翻译： 本发明是一种热处理装置，其特征在于，包括：能够被抽真空的处理容器，所述处理容器除了多个物体外，还能容纳配备有弹性波装置的温度测定对象物; 保持单元，其被构造成装载到处理容器中并从所述处理容器卸载;所述保持单元保持所述多个待处理物体和所述温度测量对象; 气体导入单元，被配置为将气体引入所述处理容器中; 加热单元，其构造成加热容纳在处理容器中的待处理对象物和温度测量对象物; 第一导电构件，被配置为用作通过射频线路连接到发射机的发射机天线，用于向容纳在处理容器中的弹性波装置发射用于测量的电波; 第二导电构件，其被配置为用作通过射频线连接到接收器的接收器天线，用于接收依赖于从容纳在处理容器中的弹性波装置发射的弹性波装置的温度的电波; 温度分析部，被配置为基于由所述接收器天线接收的电波获得用于温度测量的对象的温度; 以及温度控制部，被配置为控制所述加热单元; 其中：所述第一导电部件作为处理容器内的热处理部件的一部分设置; 并且所述第二导电构件作为所述处理容器中的热处理部件的一部分设置。

公开(公告)号：US20080232787A1

公开(公告)日：2008-09-25

申请号：US12076531

申请日：2008-03-19

申请人： Takashi Ichikawa ,  Makoto Kobayashi ,  Kenichi Yamaga

发明人： Takashi Ichikawa ,  Makoto Kobayashi ,  Kenichi Yamaga

IPC分类号： F26B19/00

CPC分类号： F26B23/06 ,  F27B17/0025 ,  H01L21/67109

摘要： There is provided a heat processing furnace capable of quickly increasing and decreasing a temperature, while achieving improvement in durability. A heat processing furnace 2 comprises: a processing vessel 3 for accommodating an object to be processed w and performing thereto a heat process; and a cylindrical heater 5 disposed to surround an outer circumference of the processing vessel 3, for heating the object to be processed w. The heater 5 includes a cylindrical heat insulating member 16, and heating resistors 18 arranged along an inner circumferential surface of the heat insulating member 16. Each of the heating resistors 18 is formed of a strip-shaped member that is bent into a waveform having peak portions and trough portions. Pin members 20 are arranged in the heat insulating member 16 at suitable intervals therebetween, the pin members 20 holding the heating resistor 18 such that the heating resistor 18 is movable in a radial direction of the heater.

摘要翻译： 提供能够快速增加和降低温度的热处理炉，同时实现耐久性的提高。 热处理炉2包括：处理容器3，用于容纳被处理物体w并执行加热处理; 以及围绕处理容器3的外周设置的圆筒形加热器5，用于加热待加工物体w。 加热器5包括圆柱形绝热构件16和沿着隔热构件16的内周面布置的加热电阻器18.每个加热电阻器18由弯曲成具有峰值的波形的条形构件形成 部分和谷部分。 销构件20以合适的间隔布置在绝热构件16中，销构件20保持加热电阻器18，使得加热电阻器18可沿加热器的径向移动。

公开(公告)号：US07150628B2

公开(公告)日：2006-12-19

申请号：US10529417

申请日：2004-05-26

申请人： Kenichi Yamaga ,  Ken Nakao

发明人： Kenichi Yamaga ,  Ken Nakao

IPC分类号： F27D5/00

CPC分类号： H01L21/67109

摘要： A single-substrate heat-processing apparatus (2) for a semiconductor processing system includes a process container (4) configured to accommodate a target substrate (W). A support member (6) is disposed in the process container (4) and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section (20) is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member (16) is disposed within a flow passage of the heating gas supplied from the heating gas supply section (20), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).

摘要翻译： 用于半导体处理系统的单衬底加热处理设备（2）包括被配置为容纳目标衬底（W）的处理容器（4）。 支撑构件（6）设置在处理容器（4）中，并且构造成在目标基板的底表面露出时基本上以水平状态支撑目标基板（W）。 设置加热气体供给部（20），以产生加热气体，并向加热气体的底面（W）供给加热气体。 分配构件（16）设置在从加热气体供给部（20）供给的加热气体的流路内，构成为提高加热气体在目标基板（W）的底面上的分布均匀性。

公开(公告)号：USD361752S

公开(公告)日：1995-08-29

申请号：US13079

申请日：1993-09-17

申请人： Kenichi Yamaga

设计人： Kenichi Yamaga

公开(公告)号：US5181819A

公开(公告)日：1993-01-26

申请号：US772836

申请日：1991-10-08

申请人： Kazunari Sakata ,  Katsumi Ishii ,  Kenichi Yamaga

发明人： Kazunari Sakata ,  Katsumi Ishii ,  Kenichi Yamaga

IPC分类号： B65G49/07 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67757 ,  H01L21/67017 ,  H01L21/67769 ,  H01L21/67772 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

摘要： A semiconductor processing apparatus comprises a main body having an air passage, a plurality of filter units connected in series with the air passage in the main body, each filter unit having an air intake port, an air otlet port and an air blower, the air intake port of each filter unit communicating with the air outlet ports of the filter units disposed upstream side of the air passage, and a mechanism for arranging articles to be processed close to the air outlet port of each filter unit such that air is supplied to the articles to be processed after the air has passed through the corresponding filter units.

摘要翻译： 半导体处理装置包括具有空气通道的主体，与主体中的空气通道串联连接的多个过滤器单元，每个过滤单元具有进气口，空气口和送风机，空气 每个过滤器单元的进气口与设置在空气通道的上游侧的过滤器单元的空气出口连通，以及用于将待加工物品靠近每个过滤器单元的空气出口排列的机构， 在空气通过相应的过滤器单元后待处理的物品。

公开(公告)号：US4954079A

公开(公告)日：1990-09-04

申请号：US395645

申请日：1989-02-03

申请人： Kenichi Yamaga

发明人： Kenichi Yamaga

IPC分类号： C30B31/10 ,  C30B35/00

CPC分类号： C30B35/005 ,  C30B31/103 ,  Y10S414/14

摘要： According to this invention, a boat carried by an elevator is put on a boat supporting unit installed at a boat delivery position and capable of moving up and down and then, the boat is delivered from the boat supporting unit to transfer means for a heat-treating furnace. Therefore, boats can be transferred by the common elevator to the boat delivery positions at heat-treating furnace arranged in multiple stages. Even when heat-treating furnaces of different types are installed in multiple stages, boats can be transferred to those furnaces by using the common elevator. As a result, when boats to be sent to different types of furnaces arrive at the work position, for example, boats can be delivered to the furnaces with extremely high efficiency and by simple devices.

摘要翻译： 根据本发明，将由电梯承载的船放在安装在船运送位置并能够上下移动的船支撑单元上，然后将舟从船支撑单元输送到用于热交换装置的转移装置， 处理炉。 因此，可以将公共电梯的船舶转移到以多级排列的热处理炉的船舶送出位置。 即使在多级安装不同类型的热处理炉的情况下，也可以使用公共电梯将船只转移到那些炉子。 因此，当要送往不同类型的炉子的船只到达工作位置时，例如，船只可以以极高的效率和简单的装置运送到炉子。