公开(公告)号：US20050059202A1

公开(公告)日：2005-03-17

申请号：US10956049

申请日：2004-10-04

申请人： Yoshitaka Kimura

发明人： Yoshitaka Kimura

IPC分类号： H01L21/3205 ,  H01L21/336 ,  H01L21/822 ,  H01L21/84 ,  H01L23/52 ,  H01L27/04 ,  H01L27/12 ,  H01L29/786 ,  H01Q9/16

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon on insulator (SOI) semiconductor device includes a wire connected to doped regions formed in an active layer of a SOl substrate. A ratio of the area of the wire to the doped region or a ratio of the area of contact holes formed on the wire to the doped region is limited to a predetermined value. When the ratio exceeds the predetermined value, a dummy doped region is added to prevent the device from being damaged during a plasma process.

摘要翻译： 绝缘体上硅（SOI）半导体器件包括连接到形成在SO1衬底的有源层中的掺杂区的导线。 导线的面积与掺杂区域的比率或形成在导线上的接触孔面积与掺杂区域的比率被限制在预定值。 当比率超过预定值时，添加虚拟掺杂区域以防止在等离子体处理期间器件受损。

公开(公告)号：US06815771B2

公开(公告)日：2004-11-09

申请号：US10280022

申请日：2002-10-25

申请人： Yoshitaka Kimura

发明人： Yoshitaka Kimura

IPC分类号： H01L2900

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon on insulator (SOI) semiconductor device includes a wire connected to doped regions formed in an active layer of a SOI substrate. A ratio of the area of the wire to the doped region or a ratio of the area of contact holes formed on the wire to the doped region is limited to a predetermined value. When the ratio exceeds the predetermined value, a dummy doped region is added to prevent the device from being damaged during a plasma process.

公开(公告)号：US06204542B1

公开(公告)日：2001-03-20

申请号：US09161916

申请日：1998-09-29

申请人： Eita Kinoshita ,  Yoshitaka Kimura ,  Shigeo Iida

发明人： Eita Kinoshita ,  Yoshitaka Kimura ,  Shigeo Iida

IPC分类号： H01L2710

CPC分类号： H01L29/41725 ,  H01L27/0207 ,  H01L29/4238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The gate width of a field effect transistor is increased to a value greater than a size of an active region by forming an inclined portion of a gate electrode. As a result, the current driving capability of a field effect transistor is increased without degrading the integration density. The driving capability of the transistor can be further effectively increased by forming an expanded portion of the active region at a location corresponding to the inclined portion of the gate electrode thereby reducing the resistance of the diffusion layer.

摘要翻译： 通过形成栅电极的倾斜部分，将场效应晶体管的栅极宽度增加到大于有源区的尺寸的值。 结果，增加了场效应晶体管的电流驱动能力，而不降低集成密度。 通过在对应于栅电极的倾斜部分的位置处形成有源区的扩展部分，从而降低扩散层的电阻，能够进一步有效地提高晶体管的驱动能力。

公开(公告)号：US6143811A

公开(公告)日：2000-11-07

申请号：US134039

申请日：1998-08-14

申请人： Norimasa Oda ,  Yoshitaka Kimura ,  Kiyoshi Handa

发明人： Norimasa Oda ,  Yoshitaka Kimura ,  Kiyoshi Handa

IPC分类号： C08L23/10 ,  C08L97/02 ,  C08L89/00

CPC分类号： C08L23/10 ,  C08L97/02

摘要： While resin forming material and hygroscopic wood flour or wood flour containing water, which were fed to the feed port 23 of the intermeshing type two screw type screw side feeder 20, are being conveyed toward the intermeshing type twin screw extruder 1, they are somewhat kneaded and then introduced into the intermeshing type twin screw extruder 1. Resin forming material and hygroscopic wood flour or wood flour containing water, which have been introduced into the intermeshing type twin screw extruder 1, are melted and kneaded by the heat transmitted from the heating cylinder 2 and also by the heat generated in the process of shearing conducted by the rotating screws 3a, 3b. After that, they are extruded from the die 9 in the form of strands. Moisture and gas composed of volatile components generated in the process of melting and kneading are sucked by vacuum from the rear vent 6a arranged on the upstream side of the introducing port 5 and also sucked by vacuum from the vents 6b, 6c arranged on the downstream side of the introducing port 5, so that they can be discharged outside the apparatus.

摘要翻译： 将进料到啮合型双螺杆型螺杆侧进料器20的进料口23的含有树脂的成型材料和吸湿木粉或含木质面粉的木粉正在向啮合型双螺杆挤出机1输送， 然后引入相互啮合型双螺杆挤出机1.已经引入到啮合型双螺杆挤出机1中的含有水的树脂形成材料和吸湿木粉或木粉通过从加热筒传递的热量熔化和捏合 并且还通过由旋转螺钉3a，3b在剪切过程中产生的热量产生。 之后，它们以管线的形式从模具9挤出。 由熔融混炼过程中产生的挥发性成分构成的水分和气体由布置在引入口5的上游侧的后排气口6a通过真空吸入，并且也从布置在下游侧的通气口6b，6c通过真空抽吸 ，使得它们可以排出设备外部。

公开(公告)号：US5630226A

公开(公告)日：1997-05-13

申请号：US353050

申请日：1994-12-09

申请人： Minoru Kanda ,  Mikio Komatsu ,  Naoki Ao ,  Kyoji Masamoto ,  Yoshitaka Kimura

发明人： Minoru Kanda ,  Mikio Komatsu ,  Naoki Ao ,  Kyoji Masamoto ,  Yoshitaka Kimura

IPC分类号： H01Q1/24 ,  H01Q21/24 ,  H04B1/18

CPC分类号： H01Q1/247 ,  H01Q21/245

摘要： A low-noise-block downconverter (LNB) for use with flat antennas receiving dual polarized electromagnetic waves includes a body case mounted to a rear side surface of the flat antenna, the body case having two wave guide input ports corresponding to wave guide apertures of the antenna and enclosing a selective device alternatively allowing either one of two outputs corresponding to two different type polarized electromagnetic waves received.

摘要翻译： 用于与接收双极化电磁波的平面天线一起使用的低噪声块下变频器（LNB）包括安装到平面天线的后侧表面的主体壳体，主体壳体具有两个对应于波导孔的波导输入端口 天线并且包围选择性装置，或者允许对应于接收到的两种不同类型的极化电磁波的两个输出中的任一个。

公开(公告)号：US5153403A

公开(公告)日：1992-10-06

申请号：US648327

申请日：1991-01-29

申请人： Yoshitaka Kimura

发明人： Yoshitaka Kimura

IPC分类号： A21B2/00 ,  H05B6/80

CPC分类号： H05B6/642 ,  A21B2/00 ,  H05B6/6482 ,  Y10S99/14

摘要： A frozen food is thawed by irradiating the frozen food with far infrared rays while supplying cold air to the frozen food to maintain the surface temperature thereof at a level not higher than 10.degree. C. Prior to the far infrared ray irradiation, the frozen food may be irradiated with a microwave. Thus, the frozen food can be uniformly thawed while maintaining freshness without degradation of the taste and favor thereof.

摘要翻译： 冷冻食品通过以远红外线照射冷冻食品而解冻，同时向冷冻食品供应冷空气以将其表面温度维持在不高于10℃的水平。在进行远红外线照射之前，冷冻食品可以 用微波照射。 因此，冷冻食品可以均匀地融化，同时保持新鲜度，而不会降低味道并有利于其。