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    COOKING APPLIANCE
    2.
    发明公开
    COOKING APPLIANCE 审中-公开

    公开(公告)号：US20240251487A1

    公开(公告)日：2024-07-25

    申请号：US18289942

    申请日：2021-05-21

    Applicant: LG ELECTRONICS INC.

    Inventor： Jaepyo HONG ,  Junghyeong HA ,  Yunbyung CHAE ,  Myeongjun SHIN ,  Sunghun SIM

    IPC: H05B6/64 ,  H05B6/76

    CPC classification number: H05B6/6408 ,  H05B6/6482 ,  H05B6/6488 ,  H05B6/76

    Abstract: A cooking appliance includes a housing which has a cavity formed therein; a door which is connected to the housing and opens/closes the cavity; a microwave heating module which emits microwaves to the cavity; a working coil module which emits a magnetic field to the cavity; a plate in which a center hole for guiding a magnetic field to the cavity is formed; and a shielding filter which is disposed between the plate and the working coil module. The plate has a plurality of grooves formed around the center hole.

    AUTONOMOUS CAVITY RESONATOR AND HEAT MAP
    6.
    发明申请
    AUTONOMOUS CAVITY RESONATOR AND HEAT MAP 审中-公开

    公开(公告)号：US20190116634A1

    公开(公告)日：2019-04-18

    申请号：US15785956

    申请日：2017-10-17

    Applicant: Milo Eadan ,  Francis Eugene Toriello

    Inventor： Milo Eadan ,  Francis Eugene Toriello

    IPC: H05B6/64

    CPC classification number: H05B6/6447 ,  H05B6/6402 ,  H05B6/6411 ,  H05B6/6444 ,  H05B6/6482 ,  H05B6/6494

    Abstract: An automated microwave oven configured to autonomously determine a duration of time for heating an object based on a location of the object in a microwave cavity. The heating duration may be a function of cumulative energy estimated to be experienced by the object due to the object location, e.g., radial distance from center, under rotational motion of the rotating tray. A concentric energy visualization is provided on an interior surface of the microwave cavity, representing a function of cumulative energy experienced under rotational motion of a rotating tray about its center-line. The visualization may comprise a plurality of rings concentric about the center-line, each concentric ring representing a constant value of the function of cumulative energy, oscillating in value along the radial length of the rotating tray.

    CRISPNESS AND BROWNING IN FULL FLAT MICROWAVE OVEN
    7.
    发明申请
    CRISPNESS AND BROWNING IN FULL FLAT MICROWAVE OVEN 审中-公开

    公开(公告)号：US20190075624A1

    公开(公告)日：2019-03-07

    申请号：US16115986

    申请日：2018-08-29

    Applicant: WHIRLPOOL CORPORATION

    Inventor： Andrea Francesco Grassi ,  Vince Huang ,  Jack Xu ,  Tingting Yu

    IPC: H05B6/64

    CPC classification number: H05B6/6482 ,  H05B6/6408 ,  H05B6/6491 ,  H05B6/6494 ,  H05B6/686 ,  H05B6/725 ,  H05B2206/044

    Abstract: A microwave heating apparatus is disclosed. The heating apparatus comprises a cavity comprising a ceiling and a bottom support plate. The cavity is arranged to receive a food load. The apparatus further comprises at least one microwave supply system configured to supply microwaves at the cavity bottom. The at least one microwave supply system comprises at least one microwave source and at least one antenna arranged below the bottom support plate. The apparatus further comprises a heat element and a crisp plate. The heat element is connected proximate the ceiling and extends substantially over a ceiling area formed by the ceiling. The crisp plate is disposed in the cavity and vertically spaced from the bottom support plate by a rack.

    COOKING APPARATUS
    8.
    发明申请
    COOKING APPARATUS 审中-公开

    公开(公告)号：US20180352615A1

    公开(公告)日：2018-12-06

    申请号：US15776758

    申请日：2016-11-15

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Gyu Sik LIM ,  Hyun Shik SHIN ,  Jin Ho JEONG ,  Hong Man CHANG

    IPC: H05B6/68 ,  A47J27/00 ,  A47J36/32 ,  A23L5/10 ,  A23L5/30

    CPC classification number: A47J27/00 ,  F24C7/02 ,  F24C7/08 ,  F24C13/00 ,  H05B6/6476 ,  H05B6/6482 ,  H05B6/6494 ,  H05B6/687

    Abstract: Disclosed is a cooking apparatus for providing a cooking vessel suitable for a simmer cooking function. A cooking apparatus of the present invention includes a cooking room; a cooking vessel accommodated in the cooking room, and including a main body, and a heating element attached on a bottom of the main body and configured to be heated by microwaves to heat the main body; a microwave heater configured to radiate microwaves to the cooking vessel; an input device configured to receive a simmer cooking command; and a controller configured to repeatedly perform a process of turning on the microwave heater for a first time period, when the simmer cooking command is received through the input device, and turning off the microwave heater for a second time period when the first time period elapses, for a cooking time period, and configured to perform a keeping-warm process when a door does not open in a third time period after the cooking time period elapses.

    Systems and Methods for Annealing Semiconductor Structures
    9.
    发明申请
    Systems and Methods for Annealing Semiconductor Structures 审中-公开

    公开(公告)号：US20180337077A1

    公开(公告)日：2018-11-22

    申请号：US16048847

    申请日：2018-07-30

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Chun-Hsiung Tsai ,  Zi-Wei Fang ,  Chao-Hsiung Wang

    IPC: H01L21/67 ,  H05B6/80 ,  H01L21/324 ,  H05B6/64

    CPC classification number: H01L21/67115 ,  H01L21/324 ,  H05B6/6482 ,  H05B6/6491 ,  H05B6/80 ,  H05B6/806

    Abstract: Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

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