公开(公告)号：US08378387B2

公开(公告)日：2013-02-19

申请号：US12919467

申请日：2009-01-21

申请人： Kazuki Ota ,  Yasuhiro Okamoto

发明人： Kazuki Ota ,  Yasuhiro Okamoto

IPC分类号： H01L29/78

CPC分类号： H01L29/42356 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7785 ,  H01L29/7788

摘要： A field effect transistor according to the present invention includes A field effect transistor, comprising: a nitride-based semiconductor multilayer structure, at least including, a drift layer formed of n-type or i-type AlxGa1-xN (0≦X≦0.3), a barrier layer formed of i-type AlYGa1-Y (Y>X), an electron supply layer formed of n-type AlYGa1-YN, and a channel layer formed of i-type GaN or InGaN, that are epitaxially grown on a substrate in this order, from the side of the substrate, a suitable buffer layer being interposed between the substrate and the nitride-based semiconductor multilayer structure; a gate electrode formed in a part of a front surface of the channel layer with an insulating film interposed therebetween; an n+type connection region in which n-type impurities are doped with the density of 1×1018 cm−3 or more, in a range from at least a part of a channel layer to a part of the drift layer, adjacent to one side in a planer direction of an area where the gate electrode is formed; a source electrode formed on a front surface of the semiconductor layer in the opposite side of the n+type connection region with respect to the gate electrode; and a drain electrode formed on a back surface of the substrate.

摘要翻译： 根据本发明的场效应晶体管包括A场效应晶体管，包括：氮化物基半导体多层结构，至少包括由n型或i型Al x Ga 1-x N形成的漂移层（0＆amp; NlE; X＆nlE; 0.3 ），由i型AlYGa1-Y（Y> X）形成的阻挡层，由n型AlYGa1-YN形成的电子供给层和由i型GaN或InGaN形成的沟道层，其外延生长在 从基板的侧面依次形成基板，在基板和氮化物系半导体多层结构之间插入合适的缓冲层; 栅电极，其形成在沟道层的前表面的一部分中，绝缘膜插入其间; 在从沟道层的至少一部分到漂移层的一部分的范围内，以1×10 18 cm -3以上的密度掺杂n型杂质的n +型连接区域，与一个 在形成栅电极的区域的平面方向; 源极，其形成在所述半导体层的与所述n +型连接区相对于所述栅极的相反侧的前表面上; 以及形成在所述基板的背面上的漏电极。

公开(公告)号：US20110006345A1

公开(公告)日：2011-01-13

申请号：US12919467

申请日：2009-01-21

申请人： Kazuki Ota ,  Yasuhiro Okamoto

发明人： Kazuki Ota ,  Yasuhiro Okamoto

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/42356 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7785 ,  H01L29/7788

摘要： A field effect transistor according to the present invention includes A field effect transistor, comprising: a nitride-based semiconductor multilayer structure, at least including, a drift layer formed of n-type or i-type AlxGa1-xN (0≦X≦0.3), a barrier layer formed of i-type AlYGa1-Y (Y>X), an electron supply layer formed of n-type AlYGa1-YN, and a channel layer formed of i-type GaN or InGaN, that are epitaxially grown on a substrate in this order, from the side of the substrate, a suitable buffer layer being interposed between the substrate and the nitride-based semiconductor multilayer structure; a gate electrode formed in a part of a front surface of the channel layer with an insulating film interposed therebetween; an n+type connection region in which n-type impurities are doped with the density of 1×1018 cm−3 or more, in a range from at least a part of a channel layer to a part of the drift layer, adjacent to one side in a planer direction of an area where the gate electrode is formed; a source electrode formed on a front surface of the semiconductor layer in the opposite side of the n+type connection region with respect to the gate electrode; and a drain electrode formed on a back surface of the substrate.

摘要翻译： 根据本发明的场效应晶体管包括A场效应晶体管，包括：氮化物基半导体多层结构，至少包括由n型或i型Al x Ga 1-x N形成的漂移层（0＆amp; NlE; X＆nlE; 0.3 ），由i型AlYGa1-Y（Y> X）形成的阻挡层，由n型AlYGa1-YN形成的电子供给层和由i型GaN或InGaN形成的沟道层，其外延生长在 从基板的侧面依次形成基板，在基板和氮化物系半导体多层结构之间插入合适的缓冲层; 栅电极，其形成在沟道层的前表面的一部分中，绝缘膜插入其间; 在从沟道层的至少一部分到漂移层的一部分的范围内，以1×10 18 cm -3以上的密度掺杂n型杂质的n +型连接区域，与一个 在形成栅电极的区域的平面方向; 源极，其形成在所述半导体层的与所述n +型连接区相对于所述栅极的相反侧的前表面上; 以及形成在所述基板的背面上的漏电极。

公开(公告)号：US20140203877A1

公开(公告)日：2014-07-24

申请号：US14239810

申请日：2012-08-21

申请人： Kazuki Ota

发明人： Kazuki Ota

IPC分类号： H03F3/16

CPC分类号： H03F3/16 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786

摘要： A semiconductor device is provided with: a field-effect transistor that has a source electrode and a drain electrode that are connected to a semiconductor layer, a gate electrode that is provided on the surface of the semiconductor layer between the source electrode and the drain electrode, and a field plate electrode that is provided on the surface of the semiconductor layer in the vicinity of the gate electrode via an insulating layer, wherein the field-effect transistor amplifies high frequency signals received by the gate electrode to be outputted from the drain electrode; and a voltage dividing circuit that divides a potential difference between the drain electrode and a reference potential GND, and applies a bias voltage such that respective parts of the field plate electrode have a mutually equal potential.

摘要翻译： 半导体器件具有：具有连接到半导体层的源电极和漏电极的场效应晶体管，设置在源电极和漏极之间的半导体层的表面上的栅电极 以及通过绝缘层设置在栅电极附近的半导体层的表面上的场板电极，其中场效应晶体管放大由栅电极接收的高频信号，以从漏极输出 ; 以及分压电路，其分割漏电极和基准电位GND之间的电位差，并施加偏置电压，使得场板电极的各个部分具有相互相等的电位。

公开(公告)号：US20100270559A1

公开(公告)日：2010-10-28

申请号：US12742587

申请日：2008-11-17

申请人： Kazuki Ota

发明人： Kazuki Ota

IPC分类号： H01L29/80 ,  H01L21/337 ,  H01L29/205

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A field effect transistor includes: a channel layer 103 containing GaN or InGaN; a first electron-supplying layer 104 disposed over the channel layer 103 and containing InxAlyGa1-x-yN (0≦x

摘要翻译： 场效应晶体管包括：包含GaN或InGaN的沟道层103; 第一电子供应层104设置在沟道层103上并且包含In x Al y Ga 1-x-y N（0＆nl E; x <1,0

公开(公告)号：US08680580B2

公开(公告)日：2014-03-25

申请号：US12742587

申请日：2008-11-17

申请人： Kazuki Ota

发明人： Kazuki Ota

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/15 ,  H01L31/0256

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A field effect transistor includes: a channel layer 103 containing GaN or InGaN; a first electron-supplying layer 104 disposed over the channel layer 103 and containing InxAlyGa1-x-yN (0≦x

摘要翻译： 场效应晶体管包括：包含GaN或InGaN的沟道层103; 第一电子供应层104设置在沟道层103上并且包含In x Al y Ga 1-x-y N（0＆nl E; x <1,0

公开(公告)号：US09780738B2

公开(公告)日：2017-10-03

申请号：US14239810

申请日：2012-08-21

申请人： Kazuki Ota

发明人： Kazuki Ota

IPC分类号： H03F3/16 ,  H01L29/40 ,  H01L29/778 ,  H01L29/20

CPC分类号： H03F3/16 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786

摘要： A semiconductor device is provided with: a field-effect transistor that has a source electrode and a drain electrode that are connected to a semiconductor layer, a gate electrode that is provided on the surface of the semiconductor layer between the source electrode and the drain electrode, and a field plate electrode that is provided on the surface of the semiconductor layer in the vicinity of the gate electrode via an insulating layer, wherein the field-effect transistor amplifies high frequency signals received by the gate electrode to be outputted from the drain electrode; and a voltage dividing circuit that divides a potential difference between the drain electrode and a reference potential GND, and applies a bias voltage such that respective parts of the field plate electrode have a mutually equal potential.