Information classification system
    42.
    发明授权
    Information classification system 有权
    信息分类系统

    公开(公告)号:US09009160B2

    公开(公告)日:2015-04-14

    申请号:US13702022

    申请日:2011-06-15

    IPC分类号: G06F17/30

    CPC分类号: G06F17/30705

    摘要: An information classification system 100 includes: a classified information storing part 101 for storing classified information having already been classified into a certain group and group specification information for specifying the group, in association with each other; and a confidence calculating part 102 for calculating confidence having a value depending on a probability that a group which is specified based on unclassified information as a target to be classified and classified information selected as reference information from among the stored classified information and into which the unclassified information should be classified is a true group.

    摘要翻译: 信息分类系统100包括:分类信息存储部分101,用于存储已经被分类为特定组的分类信息和用于指定组的组指定信息; 以及置信计算部102,用于计算具有值的置信度,该值取决于基于未分类信息指定的组作为要分类的目标的分组的数量,并且从所存储的分类信息中选择为参考信息的分类信息,并且未分类 信息应归类为真实的群体。

    Semiconductor device and manufacturing method of the semiconductor device
    48.
    发明授权
    Semiconductor device and manufacturing method of the semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号:US07928515B2

    公开(公告)日:2011-04-19

    申请号:US12136955

    申请日:2008-06-11

    IPC分类号: H01L29/00

    摘要: A semiconductor device includes a dual gate CMOS logic circuit having gate electrodes with different conducting types and a trench capacitor type memory on a same substrate includes a trench of the substrate for the trench capacitor, a dielectric film formed in the trench, a first poly silicon film formed inside of the trench, and a cell plate electrode located above the dielectric film. The cell plate electrode includes a first poly silicon film formed on the dielectric film partially filling the trench, and a second poly silicon film formed on the first poly silicon film to completely fill the trench. The second poly silicon film includes a sufficient film thickness for forming gate electrodes, wherein the impurity concentration of the first poly silicon film is higher than the impurity concentration of the second poly silicon film.

    摘要翻译: 一种半导体器件包括具有不同导电类型的栅电极和同一衬底上的沟槽电容器型存储器的双栅极CMOS逻辑电路,包括用于沟槽电容器的衬底的沟槽,形成在沟槽中的电介质膜,第一多晶硅 形成在沟槽内部的膜,以及位于电介质膜上方的电池板电极。 电池板电极包括形成在部分地填充沟槽的电介质膜上的第一多晶硅膜和形成在第一多晶硅膜上以完全填充沟槽的第二多晶硅膜。 第二多晶硅膜包括用于形成栅电极的足够的膜厚度,其中第一多晶硅膜的杂质浓度高于第二多晶硅膜的杂质浓度。

    Method of simultaneously-connectible channel switching
    49.
    发明授权
    Method of simultaneously-connectible channel switching 有权
    同时连接通道切换方法

    公开(公告)号:US07894840B2

    公开(公告)日:2011-02-22

    申请号:US11822740

    申请日:2007-07-09

    IPC分类号: H04B7/00 H04B15/00

    CPC分类号: H04W36/18 H04W16/02

    摘要: Disconnection of communication is prevented and a connecting relation is maintained between radio devices even when a communication channel is dynamically switched. Accordingly, when a first radio device switches a communication channel used for radio communication with a second radio device, the first radio device firstly switches to a simultaneously-connectable channel capable of a simultaneous communication with an original channel, and then switches to a destination channel.

    摘要翻译: 防止通信的断开,并且即使当通信信道被动态切换时,无线电设备之间也保持连接关系。 因此,当第一无线装置切换与第二无线装置进行无线通信时使用的通信信道时,第一无线装置首先切换到能够与原始信道同时通信的同时连接的信道,然后切换到目的信道 。