摘要:
An array of universal processing elements (UPEs) may be interconnected through a switching matrix in response to control words which are in turn produced by a programmed digital computer in response to commands from a keyboard or a data file, thereby routing the outputs of selected UPEs to other UPEs for further processing and/or combining a sound stream in digital form. The matrix is comprised of both local and global conductors, the local ones being available to selected groups of UPEs. Each UPE is implemented as a digital multiplier, preferably with pipelining, and each UPE is comprised of a plurality of stages, preferably implemented with an adder for computing the sum of a plus the Boolean logic function [b.multidot.m+d.multidot.m] and a multiplexer for forming the function [b.multidot.+d.multidot.m], where a, b, d and m are bits of the respective two's complement number A, B, D and M, whereby the entire array of stages in a UPE computes A+[B.times.M+D.times.(1-M)].
摘要:
A monodirectional logic form is provided using a bistable circuit of the set-rest type comprised of two cMOS inverters connected in parallel to a source of power (V.sub.dd) by a power-down p-channel MOS transistor. Each of the cMOS inverters is comprised of a first p-channel MOS transistor in source-drain-drain-source series with an n-channel MOS transistor. Two signal-pass n-channel MOS transistors are provided, one a signal-pass transistor connected as a series switch in a first signal (d) line to the input terminal of one cMOS inverter and the output terminal of the other cMOS inverter, and the other a signal-pass transistor connected as a series switch in a second complement signal (d) line to the input terminal of the other cMOS inverter and the output terminal of the one cMOS inverter. The cMOS inverters are thus directly cross-coupled, input to output, and the input to each is gated by one of the pass transistors, while a first phase of a nonoverlapping two-phase clock signal source is applied to the gates of the power-down and signal-pass transistors. A set-reset circuit coupled in series, either directly or by switching functions is connected to receive the second phase clock signal. The signal pass transistors are connected to mutually exclusive switching functions (series-parallel nMOS network) that provide current paths to circuit ground in response to data signals, or circuit paths to the output terminals of another set-reset circuit.
摘要:
A method for storing a full Red, Green, Blue (RGB) data set. A full RGB data set is three-color image data captured with an imager array formed on a semiconductor substrate and comprising a plurality of vertical-color-filter detector groups. Each of the vertical color detector groups comprises three detector layers each configured to collect photo-generated carriers of a first polarity, separated by intervening reference layers configured to collect and conduct away photo-generated carriers of opposite polarity, the three detector layers being disposed substantially in vertical alignment with respect to one another and having different spectral sensitivities. The three-color image data is then stored as digital data in a digital storage device without performing interpolation on the three-color image data.
摘要:
A focusing method and apparatus, for use with digital cameras having an electronic viewfinder with less display resolution than in the image generated by the camera's photocell array, uses a uniformly subsampled representation of the entire image for focusing, rather than displaying a selected portion of the higher resolution image. The focusing is assisted by the exaggerated discontinuities produced by subsampling. Introducing flicker enhances focusing sensitivity by repetitively displaying, on the electronic viewfinder, a prescribed set of different reduced-resolution images obtained by subsampling the same high-resolution image at different sampling locations. Each subsampled image of the set of reduced resolution images uses a different set of substantially uniformly distributed pixels.
摘要:
A method for attaching imagers to color-separation prisms includes the steps of: arranging three solid-state array image sensor integrated circuits behind and in close proximity to the output faces of a color-separating prism having substantially equal optical path lengths for the three paths, the three solid-state array image sensor integrated circuits each having a solid-state array image sensor and bonding pads for electrical connections disposed on a top face thereof; aligning the three sensors such that the images traversing the three paths are coincident within a pixel dimension of the image sensors; filling the space between each output face of the prism and the top face of the corresponding image sensor with index-matched adhesive; and causing the index-matched adhesive to become rigid while maintaining the alignment of the three image sensors.
摘要:
A pMOS EEPROM cell includes a source, drain, channel, control gate and well contact. The device is a fully functional single element p-type floating gate MOSFET. A floating gate overlaps the well contact and completely surrounds the drain and source implants. The pMOS cell is written to by means of hot-electron injection, using an intrinsic feedback mechanism to write analog values. Hot electrons are generated in the channel by means of hole impact ionization at the transistor's drain. The pMOS cell is erased by Fowler-Nordheim tunneling. The tunneling voltage is applied only to the well to tunnel electrons from the floating gate. The well-source and well-drain junctions are protected from breakdown by means of guard rings.
摘要:
An imaging array having overflow protection and electronic shuttering features is realized without an increase in pixel complexity. Overflow protection is provided by pulsing each row of the imager with a small overflow pulse during the sense amplifier reset phase. An electronic shutter is realized using a modified version of the pixel readout timing. The shutter provides sub-frame exposure by restricting the number of line-times a pixel is allowed to integrate. For a full-frame exposure, each pixel is read out once per frame; during readout of the other rows of the array, the pixel integrates. For subframe exposure, the pixel is continually reset, using a shutter pulse applied to the row lines during sense amplifier reset, until a certain number of rows (line-times) before it is to be read out. The pixel then is allowed to integrate until it is read out normally.
摘要:
An analog-to-digital converter comprises a modulator connected to an analog input signal, a decimator connected to the output of the modulator, a normalizer connected to the output of the modulator and forming a digital output signal, and a programmable gain control circuit connected to the output of the normalizer and providing feedback gain control to the modulator and the decimator.
摘要:
A technique for decreasing the effective gain of a bipolar phototransistor at high light levels makes the image usable over a greatly extended range of illumination conditions. The effective current gain at high light levels is reduced by fabricating a "non-ideal" emitter, such as by inserting a thin 20 521 tunnel oxide between the emitter and base junction. The tunnel oxide between the emitter and base serves as a variable resistor as well as a good junction for carrier injection from the emitter. The total base voltage is the sum of the oxide voltage and the intrinsic base voltage. At high image intensity, the bipolar phototransistor will gradually enter into the saturation mode, i.e., the base to collector junction is forward biased. The beta is thus reduced. The bias of the collector should be about 0.3-0.8 V higher than the emitter at the 20.ANG. tunnel oxide thickness for optimum operation.
摘要:
A bipolar phototransistor comprises both an integrating photosensor and a switching element. The base terminal of the bipolar phototransistor is utilized as the switch-control node for the pixel and its emitter is the output node of the integrating photosensor. A plurality of integrating photosensors may be placed in an array of rows and columns, wherein the bases of all bipolar phototransistors in a row are capacitively coupled together to a common row-select line, and the emitters of all bipolar phototransistors in a column are connected together to a column sense line. The input of a sense amplifier is connected to the sense line of each column of integrating photosensors. An integrating sense amplifier according to the present invention includes an amplifying element having an inverting input connected to the sense line. A capacitor, preferably a varactor, is also connected between the inverting input and output of the amplifying element. An exponential feedback element may be provided in the sense amplifiers for signal compression at high light levels. The outputs of the sense amplifiers are connected to sample/hold circuits. The rows of the array are selected one at a time and the outputs of the sample/hold circuits for each row are scanned out of the array while the pixel data for the next row are sampled.