摘要:
An insulated square wire that has a high dielectric breakdown voltage is prepared by coating a square wire by cationic electrodeposition on a square wire to form an insulating film thereon, by application of a cationic electrocoating from an electrocoating bath, wherein the shifting speed of the square wire in the electrocoating bath is set in a range from 1 to 80 m/min; the shortest distance from a liquid-contact portion of the square wire onto the cationic electrocoating to an electrode is et longer than 1/2 of the total shift distance of the square wire from the liquid-contact portion of the square wire to a liquid-separation portion in the electrocoating bath, the cationic electrocoating contains a resin composition of which a hydratable functional group is reduced directly by electrons and passivated, resulting in deposition of a film, and the cationic electrocoating contains crosslinked resin particles.
摘要:
It is an object of the present invention to provide a method of coating an electric wire having edges, by which insulated wires having a high dielectric breakdown voltage can be attained. A method of coating an electric wire having edges, comprising a step of: forming an insul at ing film by cationic electrodeposition using a cationic electrocoating, the cationic electrocoating containing a resin composition of which a hydratable functional group is reduced directly by electrons and passivated, resulting in deposition of a film, and the cationic electrocoating containing crosslinked resin particles.
摘要:
A cationic electrodeposition coating composition containing no heavy metal-based anticorrosive agents such as lead compounds, and which is capable of forming a coating film with a high corrosion resistance. The composition contains 0.5 to 20% by weight of a compound having an N-substitued benzoxazine ring represented by formula (1), relative to a resin solid matter, and an unsaturated hydrocarbon group-containing sulfide-modified epoxy resin as a base resin: wherein R is a hydrocarbon group having 1 to 8 carbon atoms.
摘要:
A method for fabricating a nonvolatile semiconductor memory device having a stacked gate portion, including a tunnel insulating film, a floating gate electrode, a capacitive insulating film and a control gate electrode, formed over a p-type Si substrate. In the p-type Si substrate, n.sup.++ source/drain layers and n.sup.+ source/drain layers, each layer containing arsenic, are formed. In the drain region, an n.sup.- drain layer, containing phosphorus and overlapping with an entire edge of the stacked gate portion in the gate width direction, and a p layer surrounding the bottoms of the n.sup.+ and the n.sup.- drain layers are provided. In such a structure, an electric field applied between the floating gate electrode and the drain is weakened and the drain-disturb characteristics are improved during writing.
摘要:
A head swtiching signal producing circuit produces a head switching signal by electrically compensating for a phase error on a rotational plane of a rotary drum between a mounting position of a rotary head on the rotary drum and a mounting position of a rotational phase detector which is used to detect a rotational phase of the rotary drum, so as to produce an accurate head switching signal without controlling the mounting position of the rotational phase detector within a small tolerance.
摘要:
A composite device system including: a first device including a nonvolatile memory; and a second device configured to supply a power to the first device, the second device including: a power supply circuit configured to stabilize a first power supplied from an external part into a second power lower than the first power, and to supply the second power to the first device; a communication circuit configured to receive control data from the first device; and a switch configured to switch between on and off based on the control data, and to supply the first power to the first device when the switch is on, wherein the second device receives the control data from the first device by the communication circuit when data is written into the nonvolatile memory so that the switch is turned on and the first power is supplied to the first device.
摘要:
A semiconductor integrated circuit includes a regulator including an output terminal; a switch connected to the output terminal of the regulator; a pull-down resistor connected to the switch; and a leak detection circuit configured to detect a leak current generated in the semiconductor integrated circuit, and turn on the switch when the leak current is detected so that the pull-down resistor is connected via the switch to the output terminal of the regulator and a voltage output from the output terminal of the regulator is pulled down by the pull-down resistor.
摘要:
A protective monitoring circuit includes a protective circuit to detect at least one of overcharging, overdischarging, and overcurrent of a chargeable secondary battery to control whether to turn on or off a control transistor to protect the secondary battery, and a secondary-battery monitoring circuit, having a reduced size and having a breakdown voltage lower than a battery voltage of the secondary battery, to detect a status of the secondary battery, wherein the protective circuit generates a voltage that is commensurate with an output voltage of the secondary battery and that is within a predetermined tolerance voltage range of the secondary-battery monitoring circuit, and the secondary-battery monitoring circuit generates a detection value responsive to the generated voltage supplied from the protective circuit, the detection value being indicative of the output voltage of the secondary battery.
摘要:
A protective monitoring circuit includes a protective circuit to detect at least one of overcharging, overdischarging, and overcurrent of a chargeable secondary battery to control whether to turn on or off a control transistor to protect the secondary battery, and a secondary-battery monitoring circuit, having a reduced size and having a breakdown voltage lower than a battery voltage of the secondary battery, to detect a status of the secondary battery, wherein the protective circuit generates a voltage that is commensurate with an output voltage of the secondary battery and that is within a predetermined tolerance voltage range of the secondary-battery monitoring circuit, and the secondary-battery monitoring circuit generates a detection value responsive to the generated voltage supplied from the protective circuit, the detection value being indicative of the output voltage of the secondary battery.
摘要:
Provided is a bidirectional converter which has flexibility to be applicable in various conditions and performs stable switching of operation mode at high efficiency. An electronic device which supplies power in various conditions and operates with excellent efficiency is also provided. An electronic device is provided with a bidirectional converter, which has a reactor and four switches between power supply input terminals and a secondary battery, and a system circuit is supplied with an operation voltage through the bidirectional converter. A status signal indicating the operation status of the system circuit is transmitted to a microcomputer of the bidirectional converter, and based on the status signal, switching of operation mode of the bidirectional converter is controlled.