公开(公告)号：US20110041767A1

公开(公告)日：2011-02-24

申请号：US12713995

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung ,  Byung-Soo So ,  Won-Bong Baek ,  Ivan Maidanchuk

发明人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung ,  Byung-Soo So ,  Won-Bong Baek ,  Ivan Maidanchuk

IPC分类号： C23C16/00 ,  B01D49/00 ,  B01D8/00

CPC分类号： B01D8/00 ,  C23C16/4412 ,  C23C16/45544 ,  Y02C20/30

摘要： A metal capturing apparatus and an atomic layer deposition apparatus, which are capable of discharging an exhaust gas from a process chamber, in which a metal atomic layer is deposited on a substrate using a reaction gas containing a metal catalyst, without a scrubber, and easily reusing the metal catalyst contained in the exhaust gas. The metal capturing apparatus includes a capturing chamber having a capturing space, a capturing plate disposed at one side of the capturing chamber and partially inserted into the capturing chamber, a refrigerant source feeding a refrigerant cooling the capturing plate, and an attachment unit attaching the capturing plate to the capturing chamber. The atomic layer deposition apparatus includes a process chamber, a vacuum pump connected to an exhaust port of the process chamber, and a metal capturing apparatus disposed between the process chamber and the vacuum pump.

摘要翻译： 一种金属捕获装置和原子层沉积装置，其能够使用不含洗涤器的含有金属催化剂的反应气体在基板上沉积金属原子层的处理室排出废气，并且容易 重新使用废气中所含的金属催化剂。 金属捕获装置包括具有捕获空间的捕获室，设置在捕获室的一侧并部分地插入捕获室的捕获板，供给冷却捕获板的制冷剂的制冷剂源和附接单元， 板到捕获室。 原子层沉积设备包括处理室，连接到处理室的排气口的真空泵，以及设置在处理室和真空泵之间的金属捕集设备。

公开(公告)号：US20100227443A1

公开(公告)日：2010-09-09

申请号：US12713928

申请日：2010-02-26

申请人： Kil-Won LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Maxim Lisachenko ,  Ji-Su Ahn ,  Young-Dae Kim ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Kil-Won LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Maxim Lisachenko ,  Ji-Su Ahn ,  Young-Dae Kim ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757

摘要： A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility.

摘要翻译： 形成多晶硅层的方法包括通过使用包含硅原子和氢气的气体的化学气相沉积在基板上形成非晶硅层，并且使用结晶诱导金属将非晶硅层结晶成多晶硅层。 所得多晶硅层具有改善的电荷迁移率。

公开(公告)号：US20100227060A1

公开(公告)日：2010-09-09

申请号：US12714217

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Kl-Yong Lee ,  Min-Jae Jeong ,  Jong-Won Hong ,  Yun-Mo Chung ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Ji-Su Ahn ,  Tae-Hoon Yang ,  Young-Dae Kim ,  Bypung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Sang-Hyun Yun

发明人： Heung-Yeol Na ,  Kl-Yong Lee ,  Min-Jae Jeong ,  Jong-Won Hong ,  Yun-Mo Chung ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Ji-Su Ahn ,  Tae-Hoon Yang ,  Young-Dae Kim ,  Bypung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Sang-Hyun Yun

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/042 ,  C30B25/165 ,  C30B35/00

摘要： An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.

摘要翻译： 原子层沉积装置包括：室，用于控制室中的压力的​​真空泵;将反应气体供应到室中的气体供应单元;设置在真空泵和气体供应单元之间并具有加热器 设置在所述衬底保持器和所述气体供应单元之间并具有用于移动冷却剂的冷却路径的掩模组件以及用于将所述冷却剂供应到所述冷却路径中的冷却剂源。 掩模组件定位在离基板的第一距离处，并且冷却剂被供应到掩模组件的冷却路径中。 使用基板保持器的加热器加热基板，使用真空泵控制室的压力，并且通过气体供应单元依次供应反应气体。