公开(公告)号：US20130105949A1

公开(公告)日：2013-05-02

申请号：US13286728

申请日：2011-11-01

申请人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Kazuki SATO ,  Atsushi IIJIMA

发明人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Kazuki SATO ,  Atsushi IIJIMA

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L21/762

CPC分类号： H01L25/0657 ,  H01L22/32 ,  H01L24/05 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/96 ,  H01L25/50 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06135 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24146 ,  H01L2224/244 ,  H01L2224/245 ,  H01L2224/25175 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/82039 ,  H01L2224/82101 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/9202 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： In a laminated semiconductor substrate, a plurality of semiconductor substrates are laminated. Each of the semiconductor substrate has a plurality of scribe-groove parts formed along scribe lines. Further, each of the semiconductor substrate has a plurality of device regions having a semiconductor device formed therein and insulated from each other, and a plurality of wiring electrodes connected to the semiconductor devices respectively formed in the plurality of device regions and extending from the device regions into the inside of the scribe-groove parts. The plurality of wiring electrodes are arranged in a partial arrangement pattern in which the wiring electrodes are arranged along only a part of four boundary sides, corresponding to boundaries between each of the device regions and the scribe-groove parts. Further, the plurality of wiring electrodes extend into the scribe-groove part from only one of two device regions adjacent to each other with the scribe-groove part therebetween.

摘要翻译： 在层叠半导体衬底中层叠多个半导体衬底。 每个半导体衬底具有沿着划线形成的多个划线槽部分。 此外，每个半导体衬底具有多个器件区域，其中形成有彼此绝缘的半导体器件，以及多个布线电极，其连接到分别形成在多个器件区域中并从器件区域延伸的半导体器件 进入划痕槽部分的内部。 多个布线电极以局部布置图案布置，其中布线电极仅沿着四个边界侧的一部分布置，对应于每个装置区域和划线槽部分之间的边界。 此外，多个布线电极仅从彼此相邻的两个器件区域中的一个延伸到划线槽部分中，其间具有划线槽部分。

公开(公告)号：US20110170216A1

公开(公告)日：2011-07-14

申请号：US13051560

申请日：2011-03-18

申请人： Yoshitaka SASAKI ,  Hiroyuki ITOH ,  Shigeki TANEMURA ,  Tatsushi SHIMIZU ,  Tatsuya SHIMIZU

发明人： Yoshitaka SASAKI ,  Hiroyuki ITOH ,  Shigeki TANEMURA ,  Tatsushi SHIMIZU ,  Tatsuya SHIMIZU

IPC分类号： G11B5/33

CPC分类号： G11B5/1278

摘要： A magnetic layer for writing incorporates: a pole layer having an end face located in a medium facing surface; and an upper yoke layer. A first magnetic layer for flux concentration is connected to the pole layer at a location away from the medium facing surface, and passes a magnetic flux corresponding to a magnetic field generated by a first coil. A second magnetic layer for flux concentration is connected to the upper yoke layer at a location away from the medium facing surface, and passes a magnetic flux corresponding to a magnetic field generated by a second coil. A nonmagnetic layer is disposed between the pole layer and the upper yoke layer. The upper yoke layer is connected to the pole layer at a location closer to the medium facing surface than the nonmagnetic layer.

摘要翻译： 用于写入的磁性层包括：具有位于介质面向表面中的端面的极层; 和上轭铁层。 用于焊剂浓度的第一磁性层在远离介质相对表面的位置处连接到极层，并且通过对应于由第一线圈产生的磁场的磁通量。 用于焊剂浓度的第二磁性层在远离介质相对表面的位置处连接到上磁轭层，并且通过对应于由第二线圈产生的磁场的磁通量。 非磁性层设置在极层和上轭铁层之间。 上磁轭层在比非磁性层更靠近介质相对表面的位置处连接到极层。