公开(公告)号：US3676068A

公开(公告)日：1972-07-11

申请号：US3676068D

申请日：1971-05-11

Applicant: UK NI K ,  TEKNNOLOGICHESKY INST SINT SVE

Inventor： SHULZHENKO ALEXANDR ALEXANDROV ,  GETMAN ANATOLY FEDOROVICH

IPC: B01J3/06 ,  C01B31/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  C21B2100/64

Abstract: DIAMOND IS SYNTHESIZED BY SUBJECTING CARBON-CONTAINING MATERIAL IN CONTACT WITH A COMPOUND OF MERCURY OR LEAD, SUCH AS MERCURY OXIDE OR LEAD OXIDE, TO A TEMPERATURE OF AT LEAST 2000* C. AND A PRESSURE CORRESPONDING TO A SELECTED TEMPERATURE WITHIN THE DIAMOND STABILITY REGION.

公开(公告)号：US3499732A

公开(公告)日：1970-03-10

申请号：US3499732D

申请日：1968-02-26

Applicant: DONALD R GARRETT

Inventor： GARRETT DONALD R

IPC: B01J3/08 ,  C01B31/06

CPC classification number: B01J3/08 ,  B01J2203/061 ,  B01J2203/0655 ,  Y10S376/914 ,  Y10S425/026

公开(公告)号：US3457043A

公开(公告)日：1969-07-22

申请号：US3457043D

申请日：1967-01-17

Applicant: TOKYO SHIBAURA ELECTRIC CO

Inventor： WAKATSUKI MASAO ,  AOKI TOSHIO ,  WAKAMATSU NOBUYUKI

IPC: B01J3/06 ,  C01B31/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068

公开(公告)号：US3399254A

公开(公告)日：1968-08-27

申请号：US51620165

申请日：1965-11-24

Applicant: DU PONT

Inventor： DUNNINGTON BRUCE W

IPC: C04B35/52 ,  B01J3/06 ,  B01J3/08 ,  C01B31/06

CPC classification number: B01J3/08 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  C01B32/25

公开(公告)号：US3346102A

公开(公告)日：1967-10-10

申请号：US38663664

申请日：1964-07-31

Applicant: GEN ELECTRIC

Inventor： STRONG HERBERT M

IPC: B01J3/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068

公开(公告)号：US3328841A

公开(公告)日：1967-07-04

申请号：US27378563

申请日：1963-04-17

Applicant: BAROGENICS INC

Inventor： JACOB BRAYMAN

IPC: B01J3/08

CPC classification number: B01J3/08 ,  B01J2203/061 ,  B01J2203/0625 ,  B01J2203/0655

公开(公告)号：US3303053A

公开(公告)日：1967-02-07

申请号：US26806663

申请日：1963-03-26

Applicant: GEN ELECTRIC

Inventor： STRONG HERBERT M ,  TUFT ROY E

IPC: B01J3/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10T428/24736 ,  Y10T428/24802 ,  Y10T428/30

公开(公告)号：US3031269A

公开(公告)日：1962-04-24

申请号：US85578759

申请日：1959-11-27

Applicant: GEN ELECTRIC

Inventor： BOVENKERK HAROLD P

IPC: B01J3/06

CPC classification number: B01J3/067 ,  B01J3/062 ,  B01J3/065 ,  B01J2203/061 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10S425/026 ,  Y10T117/1096

公开(公告)号：US09840649B2

公开(公告)日：2017-12-12

申请号：US14027606

申请日：2013-09-16

Applicant: DIAMOND INNOVATIONS, INC.

Inventor： Shuang Ji ,  Christopher Long ,  Susanne Sowers ,  Kai Zhang

IPC: B24D3/00 ,  B24D3/02 ,  B24D11/00 ,  B24D18/00 ,  C09K3/14 ,  B01J3/06

CPC classification number: C09K3/1409 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068

Abstract: A superabrasive material and method of making the superabrasive material are provided. The superabrasive material may comprise a superabrasive crystal having an irregular surface. The superabrasive material further comprises a plurality of structure defects within the superabrasive crystal. The plurality of structure defects may cause micro-chipping when used as grinding materials.

公开(公告)号：US09714197B2

公开(公告)日：2017-07-25

申请号：US14235763

申请日：2012-07-26

Applicant: Kazuhiro Ikeda ,  Keiko Arimoto ,  Katsuko Yamamoto ,  Hitoshi Sumiya ,  Takeshi Sato

Inventor： Kazuhiro Ikeda ,  Keiko Arimoto ,  Katsuko Yamamoto ,  Hitoshi Sumiya ,  Takeshi Sato

IPC: B24D3/00 ,  B24D11/00 ,  B24D18/00 ,  B24D3/02 ,  C09K3/14 ,  C04B35/52 ,  C01B31/06 ,  B01J3/06

CPC classification number: C04B35/52 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  C01B32/25 ,  C04B2235/42 ,  C04B2235/427 ,  Y10T428/2982

Abstract: Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.