WET ETCHING PROCESS-BASED MODELING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

    公开(公告)号:US20240202399A1

    公开(公告)日:2024-06-20

    申请号:US18555176

    申请日:2021-12-28

    CPC classification number: G06F30/20 H01L21/30604 G06F2113/08 G06F2113/18

    Abstract: A method of modeling a wet etching process and a method of manufacturing a semiconductor device are disclosed. The modeling method includes: establishing partial differential equations of a reaction-diffusion system for chemical reactions involved in the wet etching process which is performed on a wafer surface using a mixed acid solution; obtaining formulas for the chemical reaction functions by applying the Brusselator model thereto; linearizing and expanding the formulas for the chemical reaction functions and thereby determining conditions for developing a chemical clock for the chemical reactions; calculating simulation parameters of the formulas for the chemical reaction functions; determining diffusion coefficients in the spatial diffusion terms, which allow formation of dome-shaped micro-cavities, thereby obtaining a mathematical model of the reaction-diffusion system for the chemical reactions involved in the wet etching process on the wafer surface. With the present invention, an optimal mixture ratio of the mixed acid solution can be rapidly and accurately determined, which enables formation of morphologically optimal dome-shaped micro-cavities on the wafer surface as a result of the etching process and hence improved performance of the semiconductor device being fabricated.

    THREE DIMENSIONAL ANALYSIS TECHNIQUES FOR CHARACTERIZING QUASI-STATIC PROCESSES

    公开(公告)号:US20240070355A1

    公开(公告)日:2024-02-29

    申请号:US18239220

    申请日:2023-08-29

    CPC classification number: G06F30/28 G06F30/23 G06F2113/08

    Abstract: A method and system for pore network characterization by one or more processing units is disclosed. The method may include obtaining an input image of a porous media sample, extracting a representative pore network from the input image by storing a voxel image for one or more pore elements, based on the one or more pore elements, defining a threshold capillary pressure for each of a set of inlet elements of the one or more pore elements; invading the one or more pore elements with a fluid flow configuration, the fluid flow configuration based, as least in part, on the threshold capillary pressure.

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