公开(公告)号：US11335531B2

公开(公告)日：2022-05-17

申请号：US16789591

申请日：2020-02-13

申请人： Applied Materials, Inc.

发明人： Joseph C. Olson ,  Morgan Evans ,  Thomas Soldi ,  Rutger Meyer Timmerman Thijssen ,  Maurice Emerson Peploski

IPC分类号： H01J37/08 ,  H01J29/07 ,  H01J37/20 ,  H01J37/305

摘要： Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

公开(公告)号：US20220143709A1

公开(公告)日：2022-05-12

申请号：US17416209

申请日：2019-03-01

申请人： Arcam AB

发明人： Christian EKBERG

IPC分类号： B22F12/90 ,  H01J37/305 ,  H01J37/30 ,  B22F10/80 ,  B22F12/41

摘要： The present specification relates to an additive manufacturing apparatus comprising an X-ray reference object (18) for calibrating an electron beam unit in the additive manufacturing apparatus by detecting X-rays generated by sweeping an electron beam from the electron beam unit over a reference surface (19) of the X-ray reference object (18) and processing the detected signals, the X-ray reference object (18) comprising a support body (20) that has a top surface (21) and comprises a plurality of holes (22) in the top surface (21), The X-ray reference object (18) comprises a plurality of target members (23) inserted into the plurality of holes (22) of the support body (20). The present specification also relates to an X-ray detector to be used in the additive manufacturing apparatus, and to a method for calibrating such an additive manufacturing apparatus.

公开(公告)号：US11328932B2

公开(公告)日：2022-05-10

申请号：US17194808

申请日：2021-03-08

申请人： TOKYO ELECTRON LIMITED

发明人： Yusuke Muraki

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01J37/305 ,  H01L21/67 ,  H01L21/02

摘要： A method for processing a substrate on which silicon layers and silicon germanium layers are alternately disposed, includes: forming an oxide layer on a surface layer of a spacer layer based on an oxygen-containing gas radicalized using remote plasma, wherein the spacer layer having a low dielectric constant is formed at least on side surfaces of the silicon layers and the silicon germanium layers; and removing the formed oxide layer by etching.

公开(公告)号：US11302515B2

公开(公告)日：2022-04-12

申请号：US16364654

申请日：2019-03-26

申请人： Comadur S.A.

发明人： Alexis Boulmay ,  Pierry Vuille ,  Julien Meier ,  Pierpasquale Tortora

IPC分类号： H01J37/08 ,  H01J37/305 ,  G04B19/06 ,  G04B29/02 ,  G04B37/00 ,  G04B39/00

摘要： A method for structuring a decorative or technical pattern in the thickness of an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material, wherein the object is made of an at least partially transparent material including a top surface and a bottom surface which extends away from the top surface. The top or bottom surfaces is provided with a mask defining an opening whose outline corresponds to the profile of the pattern to be structured, the mask covering the top or bottom surface at the positions which are not to be structured. The pattern is structured with a mono- or multicharged ion beam through the opening of the mask, wherein the mechanical properties of the mask are sufficient to prevent the ions of the ion beam from etching the top or bottom surface at the positions where this top or bottom surface is covered by the mask.

公开(公告)号：US11280749B1

公开(公告)日：2022-03-22

申请号：US17079297

申请日：2020-10-23

申请人： APPLIED MATERIALS ISRAEL LTD.

发明人： Yehuda Zur ,  Alexander Mairov

IPC分类号： G01N23/2251 ,  H01J37/305 ,  H01J37/20 ,  H01J37/28 ,  H01J37/30

摘要： A method of evaluating a region of a sample that includes a plurality of holes, wherein the method includes: taking a first image of the region by scanning the region with a first charged particle beam; evaluating the first image to determine a first center-to-center distance between first and second holes in the plurality of holes; milling a diagonal cut in an area within the region that includes the second hole at an angle such that an upper surface of the sample in the milled area where the second hole is located is recessed with respect to an upper surface of the sample where the first hole is located; thereafter, taking a second image of the region by scanning the region with the first charged particle beam; evaluating the second image to determine a second center-to-center distance between first and second holes in the plurality of holes; and comparing the second center-to-center distance to the first center-to-center distance.

公开(公告)号：US11244802B2

公开(公告)日：2022-02-08

申请号：US16961759

申请日：2018-02-28

申请人： Hitachi High-Tech Corporation

发明人： Hitoshi Kamoshida ,  Hisayuki Takasu ,  Atsushi Kamino ,  Toru Iwaya

IPC分类号： H01J37/08 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J37/305

摘要： By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

公开(公告)号：US20220020558A1

公开(公告)日：2022-01-20

申请号：US17378864

申请日：2021-07-19

申请人： JEOL Ltd.

发明人： Shogo Kataoka ,  Tatsuro Mino ,  Koji Todoroki

IPC分类号： H01J37/20 ,  H01J37/305 ,  H01J37/09

摘要： An ion milling apparatus includes a pair of shielding members sandwiching a sample, and an ion source configured to irradiate the sample with an ion beam. The ion milling apparatus is configured to be capable of irradiating the sample with the ion beam in a first mode of irradiating the sample with the ion beam via one shielding member and in a second mode of irradiating the sample with the ion beam via the other shielding member.

公开(公告)号：US20220001452A1

公开(公告)日：2022-01-06

申请号：US17296590

申请日：2019-03-01

申请人： Arcam AB

发明人： Kristofer Karlsson ,  Safdar Ali

IPC分类号： B22F10/368 ,  B22F10/28 ,  B22F10/85 ,  B22F12/41 ,  H01J37/21 ,  H01J37/305 ,  H01J37/09

摘要： An apparatus for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together with an electron beam from an electron beam source so as to form the article according to a computer model thereof. The apparatus includes a chamber a chamber having a first section and a second section openly connected to each other. The first section is configured to receive the individual layers of powder material. The second section comprising an electron beam source, an electromagnetic focus coil having an axially extending, and a reflector coil. The electron beam source is configured to emit an electron beam to fuse the individual layers of powder material. The reflector coil is arranged radially outside the electromagnetic focus coil. The direction of windings of the reflector coil is opposite a direction of windings of the electromagnetic focus coil.

公开(公告)号：US20210407813A1

公开(公告)日：2021-12-30

申请号：US17358860

申请日：2021-06-25

申请人： ASM IP Holding B.V.

发明人： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC分类号： H01L21/3065 ,  H01J37/305 ,  H01L21/308

摘要： A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

公开(公告)号：US20210387405A1

公开(公告)日：2021-12-16

申请号：US17407007

申请日：2021-08-19

申请人： Fermi Research Alliance, LLC

发明人： Aaron Sauers ,  Robert D. Kephart

IPC分类号： B29C64/135 ,  H01J37/305 ,  H01J37/06 ,  H01J37/147 ,  E01C11/00 ,  B29C64/264 ,  B33Y10/00 ,  E01C23/14

摘要： A method and system for in situ cross-linking of polymers, Bitumen, and other materials to produce arbitrary functional or ornamental three-dimensional features using electron beams provided by mobile accelerators comprises defining a desired pattern for imparting on a target area, mapping the target area, defining at least one discrete voxel in the target area according to the desired pattern to be imparted on the target area, assigning an irradiation value to each of the at least one discrete voxels, and delivering a dose of irradiation to each of the at least one discrete voxels according to the assigned irradiation value.