Zipper Lock
    51.
    发明申请
    Zipper Lock 审中-公开
    拉链锁

    公开(公告)号:US20130067971A1

    公开(公告)日:2013-03-21

    申请号:US13621996

    申请日:2012-09-18

    Inventor: Wen-Cheng Huang

    CPC classification number: E05B65/52 Y10T70/70 Y10T70/7153 Y10T70/7486

    Abstract: A zipper lock contains: a lock body, a lock mechanism, and a shackle. The lock body includes at least one positioning post mounted thereon for fitting with at least one pull piece by using at least one through hole of the at least one pull piece. The lock mechanism is disposed on the lock body. The shackle is axially connected with the lock body and is rotated toward a unlock position relative to the lock body so that the at least one pull piece is fitted onto and removed from the at least one positioning post. The shackle allows being rotated toward a lock position relative to the lock body so that the at least one pull piece is fitted onto the at least one positioning post, and the shackle is locked by the lock mechanism.

    Abstract translation: 拉链锁包括:锁体,锁定机构和钩环。 锁体包括安装在其上的至少一个定位柱,用于通过使用至少一个拉片的至少一个通孔与至少一个拉片配合。 锁定机构设置在锁体上。 钩环与锁体轴向连接并相对于锁体旋转朝向解锁位置,使得至少一个拉片安装在至少一个定位柱上并从其移除。 钩环允许相对于锁体旋转朝向锁定位置,使得至少一个拉片安装在至少一个定位柱上,并且该钩环被锁定机构锁定。

    Transfer printing machine for transferring printing on hockey stick
    52.
    发明授权
    Transfer printing machine for transferring printing on hockey stick 有权
    转印机用于在曲棍球棒上转印

    公开(公告)号:US08387527B2

    公开(公告)日:2013-03-05

    申请号:US12705627

    申请日:2010-02-14

    Inventor: Kuo-Cheng Huang

    CPC classification number: B41M1/40 B41F16/00 B41F17/26

    Abstract: A transfer printing machine for hockey sticks include a base, a transmission unit connected to the lower portion of the base and five stations located on the top of the base. The five stations are located along the transmission direction of the transmission unit. The first station prints patterns on a top surface of a straight handle of the hockey sticks which are moved by the transmission unit. The second station prints patterns on a left side and a right side of the straight handle. The third station and the fourth station print patterns on a first inclined surface and a second inclined surface of the straight handle respectively. The fifth station prints patterns on a bottom surface of the straight handle of the hockey sticks.

    Abstract translation: 用于曲棍球的转印机包括基座,连接到基座的下部的传输单元和位于基座顶部的五个台。 五个站位于传输单元的传输方向。 第一站在由传动单元移动的曲棍球棒的直柄的顶表面上打印图案。 第二站在直柄的左侧和右侧打印图案。 第三站和第四站分别在直柄的第一倾斜表面和第二倾斜表面上打印图案。 第五站在曲棍球杆的直柄的底面打印图案。

    Method for forming semiconductor structure and method for forming memory using the same
    53.
    发明授权
    Method for forming semiconductor structure and method for forming memory using the same 有权
    用于形成半导体结构的方法和使用其形成存储器的方法

    公开(公告)号:US08383480B1

    公开(公告)日:2013-02-26

    申请号:US13295191

    申请日:2011-11-14

    CPC classification number: H01L29/4234 H01L21/28282 H01L29/66833 H01L29/792

    Abstract: A method for forming a semiconductor structure includes following steps. A substrate structure is provided. The substrate structure includes a semiconductor substrate, a first oxide-nitride-oxide (ONO) layer, and a second ONO layer. The semiconductor substrate has first and second surfaces opposite to each other. The first ONO layer includes a first oxide layer, a first nitride layer and a second oxide layer formed on the first surface in sequence. The second ONO layer includes a third oxide layer, a second nitride layer and a fourth oxide layer formed on the second surface in sequence. A nitride mask layer is formed on the first ONO layer. The fourth oxide layer is removed. The second nitride layer and the nitride mask layer are removed. The second oxide layer and the third oxide layer are removed. A fifth oxide layer is formed on the first nitride layer.

    Abstract translation: 一种形成半导体结构的方法包括以下步骤。 提供了基板结构。 衬底结构包括半导体衬底,第一氧化物 - 氧化物 - 氧化物(ONO)层和第二ONO层。 半导体衬底具有彼此相对的第一和第二表面。 第一ONO层包括顺序地形成在第一表面上的第一氧化物层,第一氮化物层和第二氧化物层。 第二ONO层包括依次形成在第二表面上的第三氧化物层,第二氮化物层和第四氧化物层。 在第一ONO层上形成氮化物掩模层。 去除第四氧化物层。 去除第二氮化物层和氮化物掩模层。 去除第二氧化物层和第三氧化物层。 在第一氮化物层上形成第五氧化物层。

    Chip structure and process for forming the same
    54.
    发明授权
    Chip structure and process for forming the same 有权
    芯片结构及其形成方法

    公开(公告)号:US08368204B2

    公开(公告)日:2013-02-05

    申请号:US13277142

    申请日:2011-10-19

    Abstract: A chip with a metallization structure and an insulating layer with first and second openings over first and second contact points of the metallization structure, a first circuit layer connecting the first and second contact points and comprising a first trace portion, first and second via portions between the first trace portion and the first and second contact points, the first circuit layer comprising a copper layer and a first conductive layer under the copper layer and at a sidewall of the first trace portion, and a second circuit layer comprising a second trace portion with a third via portion at a bottom thereof, wherein the second circuit layer comprises another copper layer and a second conductive layer under the other copper layer and at a sidewall of the second trace portion, and a second dielectric layer comprising a portion between the first and second circuit layers.

    Abstract translation: 具有金属化结构的芯片和具有在金属化结构的第一和第二接触点上的第一和第二开口的绝缘层,连接第一和第二接触点的第一电路层,包括第一迹线部分,第一和第二通孔部分, 所述第一迹线部分和所述第一和第二接触点,所述第一电路层包括铜层和在所述铜层下面和所述第一迹线部分的侧壁处的第一导电层,以及第二电路层, 其第二通路部分在其底部,其中所述第二电路层包括另一铜层和位于所述另一铜层下方的第二导电层和所述第二迹线部分的侧壁处的第二导电层,以及第二电介质层, 第二电路层。

    SONOS NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF
    55.
    发明申请
    SONOS NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF 有权
    SONOS非易失性存储单元及其制造方法

    公开(公告)号:US20130026557A1

    公开(公告)日:2013-01-31

    申请号:US13189632

    申请日:2011-07-25

    CPC classification number: H01L21/28282 H01L29/792

    Abstract: A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, wherein the method comprises steps as following: a pad oxide layer and a first hard mask layer are sequentially formed on a substrate. The pad oxide layer and the first hard mask layer are then etched through to form an opening exposing a portion of the substrate. Subsequently, an oxide-nitride-oxide (ONO) structure with a size substantially less than or equal to the opening is formed to coincide with the portion of the substrate exposed from the opening.

    Abstract translation: 一种用于制造氧化硅 - 氧化物 - 氧化物 - 硅(SONOS)非易失性存储单元的方法,其中该方法包括以下步骤:在衬底上依次形成衬垫氧化物层和第一硬掩模层。 然后将衬垫氧化物层和第一硬掩模层蚀刻通过以形成露出衬底的一部分的开口。 随后,形成具有基本上小于或等于该开口的尺寸的氧化物 - 氧化物 - 氧化物(ONO)结构,以与从该开口露出的该基板的一部分重合。

    COMMUNICATION DEVICE AND METHOD USING SAME
    56.
    发明申请
    COMMUNICATION DEVICE AND METHOD USING SAME 审中-公开
    通信装置及其使用方法

    公开(公告)号:US20130023256A1

    公开(公告)日:2013-01-24

    申请号:US13283600

    申请日:2011-10-28

    Applicant: CHENG-HUANG LU

    Inventor: CHENG-HUANG LU

    CPC classification number: H04M1/57 H04M1/663 H04M1/665

    Abstract: A communication device and method selectively establishes or cuts off a communication with an external communication device. The communication device stores a number of communication conditions. The communication device acquires identification information of the external communication device. The communication device determines whether the identification information of the external communication device satisfies the communication conditions. The communication device selectively establishes or cuts off the communication with the external communication device according to the determination.

    Abstract translation: 通信设备和方法选择性地建立或切断与外部通信设备的通信。 通信装置存储多个通信条件。 通信装置获取外部通信装置的识别信息。 通信装置确定外部通信装置的识别信息是否满足通信条件。 通信装置根据该判定,有选择地建立或切断与外部通信装置的通信。

    HETEROEPITAXIAL GROWTH USING ION IMPLANTATION
    57.
    发明申请
    HETEROEPITAXIAL GROWTH USING ION IMPLANTATION 有权
    使用离子植入进行异位生长

    公开(公告)号:US20130020580A1

    公开(公告)日:2013-01-24

    申请号:US13517535

    申请日:2012-06-13

    CPC classification number: C30B23/025 C30B25/186 C30B29/403

    Abstract: In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.

    Abstract translation: 在一个实施例中,生长异质外延层的方法包括提供包含具有侧壁的图案化特征的图案化衬底。 该方法还包括在曝光中将离子引向侧壁,其中形成改变的侧壁区域,并且在与图案化特征的其它表面相比有效地优先促进侧壁上的外延生长的一组沉积条件下沉积异质外延层。

    ZERO-CROSSING DETECTION CIRCUIT AND COMMUTATION DEVICE USING THE ZERO-CROSSING DETECTION CIRCUIT
    58.
    发明申请
    ZERO-CROSSING DETECTION CIRCUIT AND COMMUTATION DEVICE USING THE ZERO-CROSSING DETECTION CIRCUIT 有权
    使用零交叉检测电路的零交叉检测电路和传感器件

    公开(公告)号:US20120326647A1

    公开(公告)日:2012-12-27

    申请号:US13232086

    申请日:2011-09-14

    CPC classification number: H02P6/182

    Abstract: A zero-crossing detection circuit and a commutation device using the zero-crossing detection circuit are provided. The zero-crossing detection circuit is adapted into a three-phase brushless DC (direct current) motor with first to third coils. One terminal of each of the first to third coils is electrically coupled together with each other. The detection circuit comprises a first selection circuit, a second selection circuit and a comparator. The first selection circuit and the second selection circuit are both electrically coupled to another terminals of the first to third coils, to obtain first to third terminal voltages, and output one of the first to third terminal voltages according to a selection signal. The comparator is configured for comparing an output of the first selection circuit and an output of the second selection circuit, to output a comparing result.

    Abstract translation: 提供过零检测电路和使用过零检测电路的换向装置。 过零检测电路适用于具有第一至第三线圈的三相无刷直流(直流)电动机。 第一至第三线圈中的每一个的一个端子彼此电耦合。 检测电路包括第一选择电路,第二选择电路和比较器。 第一选择电路和第二选择电路都电耦合到第一至第三线圈的另一个端子,以获得第一至第三端子电压,并根据选择信号输出第一至第三端子电压中的一个。 比较器被配置为比较第一选择电路的输出和第二选择电路的输出,以输出比较结果。

    LED POWER SUPPLY SYSTEM
    60.
    发明申请
    LED POWER SUPPLY SYSTEM 审中-公开
    LED电源系统

    公开(公告)号:US20120274221A1

    公开(公告)日:2012-11-01

    申请号:US13172867

    申请日:2011-06-30

    Inventor: CHENG-HUANG CHEN

    CPC classification number: H05B37/00 H05B33/0818 H05B33/0842 Y02B20/346

    Abstract: A light emitting diode (LED) power supply system includes a photoelectric conversion element, an electric energy storage element, a PWM signal output element, and an LED driving unit. The photoelectric conversion element is configured for converting solar energy into electric energy. The electric energy storage element stores the electric energy from the photoelectric conversion element. The PWM signal output element and LED driving unit are both powered by the storage element. The PWM signal output element is configured to output pulse signals of different widths based on different controls of the LED to the LED driving unit, and the LED driving unit is configured to receive and convert the pulse signals into driving signals for the LED.

    Abstract translation: 发光二极管(LED)电源系统包括光电转换元件,电能存储元件,PWM信号输出元件和LED驱动单元。 光电转换元件被配置为将太阳能转换为电能。 电能存储元件存储来自光电转换元件的电能。 PWM信号输出元件和LED驱动单元均由存储元件供电。 PWM信号输出元件被配置为基于LED到LED驱动单元的不同控制来输出不同宽度的脉冲信号,并且LED驱动单元被配置为接收并将脉冲信号转换为LED的驱动信号。

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