Abstract:
A zipper lock contains: a lock body, a lock mechanism, and a shackle. The lock body includes at least one positioning post mounted thereon for fitting with at least one pull piece by using at least one through hole of the at least one pull piece. The lock mechanism is disposed on the lock body. The shackle is axially connected with the lock body and is rotated toward a unlock position relative to the lock body so that the at least one pull piece is fitted onto and removed from the at least one positioning post. The shackle allows being rotated toward a lock position relative to the lock body so that the at least one pull piece is fitted onto the at least one positioning post, and the shackle is locked by the lock mechanism.
Abstract:
A transfer printing machine for hockey sticks include a base, a transmission unit connected to the lower portion of the base and five stations located on the top of the base. The five stations are located along the transmission direction of the transmission unit. The first station prints patterns on a top surface of a straight handle of the hockey sticks which are moved by the transmission unit. The second station prints patterns on a left side and a right side of the straight handle. The third station and the fourth station print patterns on a first inclined surface and a second inclined surface of the straight handle respectively. The fifth station prints patterns on a bottom surface of the straight handle of the hockey sticks.
Abstract:
A method for forming a semiconductor structure includes following steps. A substrate structure is provided. The substrate structure includes a semiconductor substrate, a first oxide-nitride-oxide (ONO) layer, and a second ONO layer. The semiconductor substrate has first and second surfaces opposite to each other. The first ONO layer includes a first oxide layer, a first nitride layer and a second oxide layer formed on the first surface in sequence. The second ONO layer includes a third oxide layer, a second nitride layer and a fourth oxide layer formed on the second surface in sequence. A nitride mask layer is formed on the first ONO layer. The fourth oxide layer is removed. The second nitride layer and the nitride mask layer are removed. The second oxide layer and the third oxide layer are removed. A fifth oxide layer is formed on the first nitride layer.
Abstract:
A chip with a metallization structure and an insulating layer with first and second openings over first and second contact points of the metallization structure, a first circuit layer connecting the first and second contact points and comprising a first trace portion, first and second via portions between the first trace portion and the first and second contact points, the first circuit layer comprising a copper layer and a first conductive layer under the copper layer and at a sidewall of the first trace portion, and a second circuit layer comprising a second trace portion with a third via portion at a bottom thereof, wherein the second circuit layer comprises another copper layer and a second conductive layer under the other copper layer and at a sidewall of the second trace portion, and a second dielectric layer comprising a portion between the first and second circuit layers.
Abstract:
A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, wherein the method comprises steps as following: a pad oxide layer and a first hard mask layer are sequentially formed on a substrate. The pad oxide layer and the first hard mask layer are then etched through to form an opening exposing a portion of the substrate. Subsequently, an oxide-nitride-oxide (ONO) structure with a size substantially less than or equal to the opening is formed to coincide with the portion of the substrate exposed from the opening.
Abstract:
A communication device and method selectively establishes or cuts off a communication with an external communication device. The communication device stores a number of communication conditions. The communication device acquires identification information of the external communication device. The communication device determines whether the identification information of the external communication device satisfies the communication conditions. The communication device selectively establishes or cuts off the communication with the external communication device according to the determination.
Abstract:
In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.
Abstract:
A zero-crossing detection circuit and a commutation device using the zero-crossing detection circuit are provided. The zero-crossing detection circuit is adapted into a three-phase brushless DC (direct current) motor with first to third coils. One terminal of each of the first to third coils is electrically coupled together with each other. The detection circuit comprises a first selection circuit, a second selection circuit and a comparator. The first selection circuit and the second selection circuit are both electrically coupled to another terminals of the first to third coils, to obtain first to third terminal voltages, and output one of the first to third terminal voltages according to a selection signal. The comparator is configured for comparing an output of the first selection circuit and an output of the second selection circuit, to output a comparing result.
Abstract:
A video transmitting method with an image quality adjusting function is provided. In the method, a video stream is transmitted to a receiving terminal. A received number of frames of the video stream received by the receiving terminal in a preset period is obtained. An image quality of the video stream is adjusted according to the received number of frames.
Abstract:
A light emitting diode (LED) power supply system includes a photoelectric conversion element, an electric energy storage element, a PWM signal output element, and an LED driving unit. The photoelectric conversion element is configured for converting solar energy into electric energy. The electric energy storage element stores the electric energy from the photoelectric conversion element. The PWM signal output element and LED driving unit are both powered by the storage element. The PWM signal output element is configured to output pulse signals of different widths based on different controls of the LED to the LED driving unit, and the LED driving unit is configured to receive and convert the pulse signals into driving signals for the LED.