Fungal negative microorganism capable of producing high levels of
beta-carotene
    51.
    发明授权
    Fungal negative microorganism capable of producing high levels of beta-carotene 失效
    能产生高水平β-胡萝卜素的真菌负微生物

    公开(公告)号:US5328845A

    公开(公告)日:1994-07-12

    申请号:US858147

    申请日:1992-03-27

    IPC分类号: C12P23/00 C12N1/14

    摘要: The present invention is directed toward a method for producing beta-carotene using negative (minus mating type) Mucorales fungal microorganisms. The method includes mutating and selecting negative Mucorales fungal microorganisms, culturing the selected negative microorganisms in an effective medium to produce beta-carotene, and recovering beta-carotene therefrom. The present invention provides negative microorganisms that overproduce beta-carotene, beta-carotene formulations produced by the disclosed method, and the use of such formulations to enhance pigmentation, to reduce damage caused by reactive oxygen species or phototoxic molecules, to prevent or treat cancer or cardiovascular disease, to provide a Vitamin A supplement, to enhance lactation, and to increase fertility.

    摘要翻译: 本发明涉及使用负(负交配型)霉菌真菌微生物生产β-胡萝卜素的方法。 该方法包括突变和选择阴性霉菌真菌微生物,在有效培养基中培养所选择的阴性微生物以产生β-胡萝卜素,并从其中回收β-胡萝卜素。 本发明提供了过量产生β-胡萝卜素的阴性微生物,通过所公开的方法制备的β-胡萝卜素制剂,以及使用这些制剂增强色素沉淀,减少由活性氧或光毒性分子引起的损伤,以预防或治疗癌症或 心血管疾病,提供维生素A补充剂,增强哺乳期,增加生育能力。

    Calibration method for radio frequency scattering parameter measurement applying three calibrators and measurement structure thereof
    52.
    发明授权
    Calibration method for radio frequency scattering parameter measurement applying three calibrators and measurement structure thereof 有权
    使用三个校准器的射频散射参数测量的校准方法及其测量结构

    公开(公告)号:US08798953B2

    公开(公告)日:2014-08-05

    申请号:US13223410

    申请日:2011-09-01

    申请人: Chien-Chang Huang

    发明人: Chien-Chang Huang

    IPC分类号: G01R35/00 G01R27/32

    CPC分类号: G01R27/32 G01R35/005

    摘要: A calibration method for radio frequency scattering parameter measurement applying three calibrators and measurement structure thereof, comprising a transmission line segment calibrator, an offset series device calibrator, an offset shunt device calibrator and a tested object measuring instrument, wherein the length of the transmission lines for the offset series device calibrator and the offset shunt device calibrator is equal to the one of the transmission line for the tested object measuring instrument such that the offset series device calibrator, the offset shunt device calibrator and the tested object measuring instrument have the identical error boxes, and after having acquired the scattering parameter matrix of the error box by means of the calibration method, it is possible to connect the tested electronic device onto the tested object measuring instrument and perform operations on uncorrected measurement data thereof thereby obtaining the radio frequency scattering parameter of the tested object.

    摘要翻译: 一种应用三个校准器的射频散射参数测量的校准方法及其测量结构,包括传输线段校准器,偏移系列设备校准器,偏移分流装置校准器和被测物体测量仪器,其中传输线的长度用于 偏移系列装置校准器和偏移分流装置校准器等于测试对象测量仪器的传输线之一,使得偏移系列装置校准器,偏移分流装置校准器和被测物体测量仪器具有相同的误差盒 ,并且通过校准方法获取了误差盒的散射参数矩阵后,可以将测试的电子设备连接到被测对象测量仪器上,并对未校正的测量数据执行操作,从而获得射频散射参数 的测试对象。

    Calibration method for radio frequency scattering parameter measurements
    54.
    发明授权
    Calibration method for radio frequency scattering parameter measurements 有权
    射频散射参数测量的校准方法

    公开(公告)号:US08552742B2

    公开(公告)日:2013-10-08

    申请号:US13015326

    申请日:2011-01-27

    申请人: Chien-Chang Huang

    发明人: Chien-Chang Huang

    IPC分类号: G01R27/04 G01R35/00

    CPC分类号: H04B3/46

    摘要: A calibration method for radio frequency scattering parameter measurements enabling self-calibration, which calibration method using a transmission line segment calibrator, a series device calibrator, a shunt device calibrator and a tested object measuring instrument, in which the lengths of the transmission lines in the series device calibrator and the shunt device calibrator are equal to the length of the transmission lines in the tested object measuring instrument such that the series device calibrator and the shunt device calibrator have the same error box as the tested object measuring instrument; and after acquiring the scattering parameter matrix of the error box through the calibration method, it is possible to connect a tested electronic device onto the tested object measuring instrument and perform operations on uncorrected measurement data thereof thereby obtaining the radio frequency scattering parameter of the tested object.

    摘要翻译: 一种能够进行自校准的射频散射参数测量的校准方法,使用传输线路段校准器,串联设备校准器,分流装置校准器和测试对象测量仪器的校准方法,其中传输线路的长度在 串联装置校准器和分流装置校准器等于测试对象测量仪器中传输线的长度,使得串联装置校准器和分流装置校准器与测试对象测量仪器具有相同的误差盒; 并且通过校准方法获取误差盒的散射参数矩阵后,可以将测试的电子设备连接到测试对象测量仪器上,并对其未校正的测量数据执行操作,从而获得测试对象的射频散射参数 。

    Calibration Method for Radio Frequency Scattering Parameter Measurement Applying Three Calibrators and Measurement Structure Thereof
    55.
    发明申请
    Calibration Method for Radio Frequency Scattering Parameter Measurement Applying Three Calibrators and Measurement Structure Thereof 有权
    射频散射参数测量的校准方法应用三个校准器及其测量结构

    公开(公告)号:US20130060501A1

    公开(公告)日:2013-03-07

    申请号:US13223410

    申请日:2011-09-01

    申请人: Chien-Chang HUANG

    发明人: Chien-Chang HUANG

    IPC分类号: G01R35/00 G06F19/00

    CPC分类号: G01R27/32 G01R35/005

    摘要: A calibration method for radio frequency scattering parameter measurement applying three calibrators and measurement structure thereof, comprising a transmission line segment calibrator, an offset series device calibrator, an offset shunt device calibrator and a tested object measuring instrument, wherein the length of the transmission lines for the offset series device calibrator and the offset shunt device calibrator is equal to the one of the transmission line for the tested object measuring instrument such that the offset series device calibrator, the offset shunt device calibrator and the tested object measuring instrument have the identical error boxes, and after having acquired the scattering parameter matrix of the error box by means of the calibration method, it is possible to connect the tested electronic device onto the tested object measuring instrument and perform operations on uncorrected measurement data thereof thereby obtaining the radio frequency scattering parameter of the tested object.

    摘要翻译: 一种应用三个校准器的射频散射参数测量的校准方法及其测量结构,包括传输线段校准器,偏移系列设备校准器,偏移分流装置校准器和被测物体测量仪器,其中传输线的长度用于 偏移系列装置校准器和偏移分流装置校准器等于测试对象测量仪器的传输线之一,使得偏移系列装置校准器,偏移分流装置校准器和被测物体测量仪器具有相同的误差盒 ,并且通过校准方法获取了误差盒的散射参数矩阵后,可以将测试的电子设备连接到被测对象测量仪器上,并对未校正的测量数据执行操作,从而获得射频散射参数 的测试对象。

    Wireless network positioning system
    56.
    发明申请
    Wireless network positioning system 审中-公开
    无线网络定位系统

    公开(公告)号:US20080306690A1

    公开(公告)日:2008-12-11

    申请号:US11987432

    申请日:2007-11-30

    申请人: Chien-Chang Huang

    发明人: Chien-Chang Huang

    IPC分类号: G01S5/00 H04Q7/36

    CPC分类号: G01S5/0252 H04W64/00

    摘要: The present invention discloses a wireless network positioning system to add a function of positioning a mobile communication device to a wireless communication system, wherein a mobile communication device detects intensities of wireless signals from access points and transmits signal intensity data to a LAN server, and an algorithm is used to determine the position of the mobile communication device. Particularly, the present invention utilizes a WLAN architecture to position a mobile communication device in an indoor environment.

    摘要翻译: 本发明公开了一种将移动通信装置定位到无线通信系统的功能的无线网络定位系统,其中移动通信装置检测来自接入点的无线信号的强度,并向LAN服务器发送信号强度数据, 算法用于确定移动通信设备的位置。 特别地,本发明利用WLAN架构将移动通信设备定位在室内环境中。

    Method for fabricating CMOS image sensor
    57.
    发明授权
    Method for fabricating CMOS image sensor 有权
    CMOS图像传感器的制造方法

    公开(公告)号:US07323378B2

    公开(公告)日:2008-01-29

    申请号:US11163472

    申请日:2005-10-20

    IPC分类号: H01L21/8238

    摘要: This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.

    摘要翻译: 本发明提供一种具有钉扎光电二极管的CMOS图像传感器。 提供了具有P阱的P基板。 P阱与CMOS图像传感器的感光区域相邻。 CMOS图像传感器的转移晶体管的栅电极形成在P阱上。 执行自对准注入以在光感测区域内形成N型二极管扩散。 然后进行斜离子注入工艺以在栅电极正下方形成N型袋扩散。 隔板形成在栅电极的侧壁上。 然后在二极管扩散区域中形成表面P +钉扎扩散区域。

    Optical navigation chip
    58.
    发明授权
    Optical navigation chip 有权
    光导航芯片

    公开(公告)号:US07242391B2

    公开(公告)日:2007-07-10

    申请号:US10858970

    申请日:2004-06-02

    IPC分类号: G09G5/08

    CPC分类号: G06F3/0317 G06F3/03543

    摘要: An optical navigation chip. The optical navigation chip is appropriate for an optical pointing device and used for calculating a displacement of the optical navigation chip relative to an operating surface. The optical navigation chip comprises a photo sensor array driven by a photo sensor control circuit for detecting an image of the operating surface, a signal readout circuit coupled with the photo sensor array for reading out the image in analog format, an analog-to-digital conversion (ADC) circuit coupled with the signal readout circuit for converting the image from analog format to digital format, an image qualification circuit coupled with the ADC circuit for determining quality of the image and outputting a quality index accordingly, and a motion detection circuit for outputting the displacement according to the quality index.

    摘要翻译: 光导航芯片。 光学导航芯片适用于光学指向装置并用于计算光学导航芯片相对于操作表面的位移。 光学导航芯片包括由用于检测操作表面的图像的光传感器控制电路驱动的光传感器阵列,与用于以模拟格式读出图像的光传感器阵列耦合的信号读出电路,模数转换器 与用于将图像从模拟格式转换为数字格式的信号读出电路耦合的转换(ADC)电路,与ADC电路耦合的图像鉴定电路,用于确定图像的质量并相应地输出质量指标;以及运动检测电路, 根据质量指标输出排量。

    Misalignment test structure and method thereof
    59.
    发明授权
    Misalignment test structure and method thereof 有权
    未对准测试结构及其方法

    公开(公告)号:US07217581B2

    公开(公告)日:2007-05-15

    申请号:US11339687

    申请日:2006-01-26

    IPC分类号: H01L21/00

    摘要: A test structure and a test method for determining misalignment occurring in integrated circuit manufacturing processes are provided. The test structure includes a first conductive layer having a first testing structure and a second testing structure, a dielectric layer thereon, and a second conductive layer on the dielectric layer. The second conductive layer includes a third testing structure and a fourth testing structure, which respectively overlap a portion of the first testing structure and the second testing structure in a first direction and a second direction. The first direction is opposite to the second direction. The method includes a step of measuring the electrical characteristic between the first and the second conductive layers to calculate an offset amount caused by the misalignment.

    摘要翻译: 提供了用于确定在集成电路制造工艺中发生的不对准的测试结构和测试方法。 测试结构包括具有第一测试结构和第二测试结构的第一导电层,其上的电介质层和介电层上的第二导电层。 第二导电层包括在第一方向和第二方向上分别与第一测试结构和第二测试结构的一部分重叠的第三测试结构和第四测试结构。 第一方向与第二方向相反。 该方法包括测量第一和第二导电层之间的电特性以计算由不对准引起的偏移量的步骤。

    METHOD FOR FABRICATING CMOS IMAGE SENSOR
    60.
    发明申请
    METHOD FOR FABRICATING CMOS IMAGE SENSOR 有权
    CMOS图像传感器的制作方法

    公开(公告)号:US20070092986A1

    公开(公告)日:2007-04-26

    申请号:US11163472

    申请日:2005-10-20

    IPC分类号: H01L21/00

    摘要: This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.

    摘要翻译: 本发明提供一种具有钉扎光电二极管的CMOS图像传感器。 提供了具有P阱的P基板。 P阱与CMOS图像传感器的感光区域相邻。 CMOS图像传感器的转移晶体管的栅电极形成在P阱上。 执行自对准注入以在光感测区域内形成N型二极管扩散。 然后进行斜离子注入工艺以在栅电极正下方形成N型袋扩散。 隔板形成在栅电极的侧壁上。 然后在二极管扩散区域中形成表面P +钉扎扩散区域。