公开(公告)号：US07578583B2

公开(公告)日：2009-08-25

申请号：US11505796

申请日：2006-08-16

Applicant: Chung-Cheng Chou ,  Chih-Ming Lin

Inventor： Chung-Cheng Chou ,  Chih-Ming Lin

IPC: B41J2/05 ,  B41J29/393

CPC classification number: B41J2/14153 ,  B41J2002/14354

Abstract: A fluid injection device integrating a piezoelectric sensor, a fluid injection apparatus and a method for analyzing fluid content in a fluid injection device. The fluid injection device comprises a fluid injector and a piezoelectric sensor. The fluid injector comprises a plurality of fluid chambers formed in a substrate for receiving fluid. A structural layer is disposed on the substrate and the plurality of fluid chambers. At least one fluid actuator is disposed on the structural layer opposing each fluid chamber. A nozzle is adjacent to the at least one fluid actuator and connecting each fluid chamber through the structural layer. The piezoelectric sensor id disposed on the structural layer to analyze fluid content in each fluid chamber.

Abstract translation: 一种集成压电传感器，流体注射装置和用于分析流体注射装置中的流体含量的方法的流体注入装置。 流体注射装置包括流体注射器和压电传感器。 流体注射器包括形成在用于接收流体的基底中的多个流体室。 结构层设置在基板和多个流体室上。 至少一个流体致动器设置在与每个流体室相对的结构层上。 喷嘴与所述至少一个流体致动器相邻，并且将每个流体室连接通过结构层。 设置在结构层上的压电传感器id用于分析每个流体室中的流体含量。

公开(公告)号：US20090179324A1

公开(公告)日：2009-07-16

申请号：US12102439

申请日：2008-04-14

Applicant: Chin-Yung Chen ,  Chia-Hung Hsu ,  William Wang ,  Chung-Cheng Chou

Inventor： Chin-Yung Chen ,  Chia-Hung Hsu ,  William Wang ,  Chung-Cheng Chou

IPC: H01L23/36 ,  H01L21/56

CPC classification number: H01L23/3735 ,  H01L23/3677 ,  H01L24/48 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The invention discloses an integrated circuit package. The integrated circuit package comprises a substrate having a first surface and a second surface opposite thereto and a first hole passing through the substrate from the first surface to the second surface. A plurality of conductive lines is disposed on a portion of the second surface of the substrate. A semiconductor chip is disposed above the second surface of the substrate, wherein a chamber is formed between the semiconductor chip and the substrate. A plurality of bonding pads are disposed on a side of the semiconductor chip which is toward the second surface of the substrate, wherein at least one of the bonding pads are electrically connected to one of the plurality of conductive lines. A first heat dissipation layer is disposed in the first hole, and extends into the chamber. A method for fabricating the integrated circuit package is also provided.

Abstract translation: 本发明公开了一种集成电路封装。 集成电路封装包括具有第一表面和与其相对的第二表面的基板以及从第一表面到第二表面穿过基板的第一孔。 多个导电线设置在基板的第二表面的一部分上。 半导体芯片设置在衬底的第二表面上方，其中在半导体芯片和衬底之间形成腔室。 多个接合焊盘设置在半导体芯片的朝向衬底的第二表面的一侧上，其中至少一个接合焊盘电连接到多条导线之一。 第一散热层设置在第一孔中并延伸到腔室中。 还提供了一种用于制造集成电路封装的方法。

公开(公告)号：US20090167328A1

公开(公告)日：2009-07-02

申请号：US12336836

申请日：2008-12-17

Applicant: Chung Cheng CHOU ,  William WANG

Inventor： Chung Cheng CHOU ,  William WANG

IPC: G01N27/10

CPC classification number: G01N27/08 ,  C09K9/00

Abstract: The invention provides a fluid measuring apparatus, which includes a collector, a sensing circuit, and an electrochromic device electrically connected to the sensing circuit. When the concentration of a fluid flowing through the collector and between the sensing circuit varies, the color of the electrochromic device changes accordingly. Further, the electrochromic device includes an electrochromic material, and the sensing circuit includes a first electrode and a second electrode, wherein the first and the second electrodes are disposed in the collector and the electrochromic material is disposed on the first electrode. When the concentration of an electrolytic solution flowing between the first electrode and the second electrode varies, the color of the electrochromic material changes accordingly.

Abstract translation: 本发明提供了一种流体测量装置，其包括集电器，感测电路和电连接到感测电路的电致变色装置。 当流过集电器和感测电路之间的流体的浓度变化时，电致变色装置的颜色相应地改变。 此外，电致变色器件包括电致变色材料，感测电路包括第一电极和第二电极，其中第一和第二电极设置在集电器中，电致变色材料设置在第一电极上。 当在第一电极和第二电极之间流动的电解液的浓度变化时，电致变色材料的颜色相应地变化。

公开(公告)号：US20090051999A1

公开(公告)日：2009-02-26

申请号：US12222249

申请日：2008-08-06

Applicant: Long Hsu ,  Cheng-Hsien Liu ,  Sheng-Yang Tseng ,  Ai-Tang Chang ,  Chung-Cheng Chou ,  William Wang ,  Fung-Hsu Wu ,  Chen Peng ,  Ta-Yuan Lee

Inventor： Long Hsu ,  Cheng-Hsien Liu ,  Sheng-Yang Tseng ,  Ai-Tang Chang ,  Chung-Cheng Chou ,  William Wang ,  Fung-Hsu Wu ,  Chen Peng ,  Ta-Yuan Lee

IPC: G02B26/08

CPC classification number: G02B21/32

Abstract: An optical tweezers controlling device including a light source, an objective lens and a focus adjusting unit is provided. The focus adjusting unit disposed between the light source and the objective lens includes a mirror set and a zoom lens set. The mirror set has at least a mirror. The mirror is rotatable such that after a light of the light source is projected to the mirror, the reflective direction of the light reflected from the mirror is changeable. The zoom lens set has at least a zoom lens disposed in accordance with the mirror. By rotating the mirror or changing the focal length of the zoom lens, the focusing location of the light changes on the focal plane of the objective lens or in the front or the rear of the focal plane.

Abstract translation: 提供一种包括光源，物镜和焦点调节单元的光学镊子控制装置。 设置在光源和物镜之间的聚焦调节单元包括镜组和变焦透镜组。 镜子至少有一个镜子。 反射镜可旋转，使得在光源的光被投射到反射镜之后，从反射镜反射的光的反射方向是可变的。 变焦透镜组具有至少根据镜子设置的变焦透镜。 通过旋转镜子或改变变焦镜头的焦距，光的聚焦位置在物镜的焦平面或焦平面的前面或后面改变。

公开(公告)号：US07494207B2

公开(公告)日：2009-02-24

申请号：US11331514

申请日：2006-01-13

Applicant: Tsung-Wei Huang ,  Chung-Cheng Chou

Inventor： Tsung-Wei Huang ,  Chung-Cheng Chou

IPC: B41J2/05

CPC classification number: B41J2/04541 ,  B41J2/0455 ,  B41J2/0458 ,  B41J2/14072 ,  B41J2202/13

Abstract: Fluid injection devices comprise M sets of fluid injection units. Each fluid injection unit comprises N injectors separately connecting to a driver. A controller separately transmits a signal to the driver, thereby simultaneously driving a selected injector of each of the M sets of fluid injection units. A non-selected injector of each of the M sets of fluid injection units does not trigger bipolar junction transistors (BJTs).

Abstract translation: 流体注射装置包括M组流体注射单元。 每个流体注射单元包括分别连接到驱动器的N个注射器。 控制器分别将信号发送到驾驶员，从而同时驱动M组流体注射单元中的每一个的所选择的注射器。 M组流体注入单元中的每一个的未选择的注射器不触发双极结型晶体管（BJT）。

公开(公告)号：US07247901B2

公开(公告)日：2007-07-24

申请号：US10827389

申请日：2004-04-19

Applicant: Chung-Cheng Chou

Inventor： Chung-Cheng Chou

IPC: H01L27/108

CPC classification number: H01L27/10861

Abstract: A single transistor random access memory cell has an MOS well, a transfer gate of the transistor and a storage capacitor having a storage node in the well that becomes an inversion layer at a threshold voltage near zero. The inversion layer diffuses to an inversion region beneath the transfer gate when the transfer gate is turned on. For high speed operation, a doped region beneath the transfer gate becomes an inversion layer at a threshold voltage near zero. In this invention, a storage node junction is removed, which removes junction leakage and reduces subthreshold leakage current significantly.

Abstract translation: 单晶体管随机存取存储单元具有MOS阱，晶体管的传输栅极和存储电容器，其具有在阱内的存储节点，该阈值电压接近零。 当转移栅极导通时，反转层扩散到转移栅极下方的反转区域。 对于高速操作，转移栅极下方的掺杂区域成为阈值电压接近零的反型层。 在本发明中，去除了存储节点结，这显着地消除了结泄漏并且减小了亚阈值泄漏电流。

公开(公告)号：US07177220B2

公开(公告)日：2007-02-13

申请号：US10841264

申请日：2004-05-07

Applicant: Chung-Cheng Chou ,  Chien-Hua Chuang

Inventor： Chung-Cheng Chou ,  Chien-Hua Chuang

IPC: G11C7/00

CPC classification number: G11C11/40626 ,  G11C11/406 ,  G11C2211/4061 ,  G11C2211/4068

Abstract: A method and system for DRAM refresh wherein the refresh rate is proportional to the current leakage of one or more sampling cells. The sampling cells selected are representative of the nominal leakage condition of the DRAM array and track the DRAM cell leakage rates, which are dependent upon manufacturing process variations, application influences, voltage variations and the temperature of the system, both locally and globally. As the current leakage through the DRAM increases, the refresh cycle repetition frequency increases and accordingly decreases for low leakage conditions. By adjusting the refresh rate in the manner described by the invention disclosed herein, the semiconductor conserves power by reducing unnecessary refresh cycles, generates the required delay between cycles without undue power consumption and provides a cost effective means that does not require external settings and calibration to optimize the refresh rate for the variations heretofore mentioned.

Abstract translation: 一种用于DRAM刷新的方法和系统，其中刷新率与一个或多个采样单元的电流泄漏成比例。 所选择的采样单元代表DRAM阵列的标称泄漏状态，并跟踪DRAM单元泄漏速率，这取决于本地和全局的制造工艺变化，应用影响，电压变化和系统的温度。 随着通过DRAM的电流泄漏增加，刷新周期重复频率增加并因此在低泄漏条件下降低。 通过以本文公开的本发明描述的方式调整刷新速率，半导体通过减少不必要的刷新周期来节省功率，在没有不必要的功耗的情况下产生周期之间所需的延迟，并且提供了不需要外部设置和校准的成本有效的手段 优化上述变化的刷新率。

公开(公告)号：US20060203600A1

公开(公告)日：2006-09-14

申请号：US11264041

申请日：2005-10-31

Applicant: Chung-Cheng Chou ,  Chien-Hua Huang ,  Hau-Tai Shieh ,  Tsai-Hsin Lai

Inventor： Chung-Cheng Chou ,  Chien-Hua Huang ,  Hau-Tai Shieh ,  Tsai-Hsin Lai

IPC: G11C8/00

CPC classification number: G11C5/145 ,  G11C8/08

Abstract: A word line control device has a word line driver for deactivating and activating a word line to control access to a memory cell, and a voltage coupling device for coupling voltages to the word line driver.

Abstract translation: 字线控制装置具有用于禁用和激活字线以控制对存储器单元的访问的字线驱动器，以及用于将电压耦合到字线驱动器的电压耦合装置。

公开(公告)号：US20060082614A1

公开(公告)日：2006-04-20

申请号：US11248172

申请日：2005-10-13

Applicant: Chung-Cheng Chou ,  Tsung-Wei Huang ,  Shang-Shi Wu ,  Tsung-Ping Hsu

Inventor： Chung-Cheng Chou ,  Tsung-Wei Huang ,  Shang-Shi Wu ,  Tsung-Ping Hsu

IPC: B41J2/05

CPC classification number: B41J2/04506 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/14153 ,  B41J2002/1437

Abstract: Fluid injectors and methods of controlling injection quality for fluid injectors. The fluid injector comprises a fluid chamber for receiving fluid with a first layer thereon, at least one fluid actuator positioned on the first layer, a sensor for measuring the thickness of the first layer, a second layer disposed on the first layer covering the at least one fluid actuator and the sensor, and a nozzle adjacent to the fluid actuator and communicating with the fluid chamber through the second layer and the first layer. By measuring the thickness of the structural layer and comparing the thickness with a predetermined data bank, an optimized driving signal is provided to inject optimized droplet, thereby improving printing quality.

Abstract translation: 流体注射器和控制注射器喷射质量的方法。 流体注射器包括用于接收其上具有第一层的流体的流体室，位于第一层上的至少一个流体致动器，用于测量第一层的厚度的传感器，设置在第一层上的第二层， 一个流体致动器和传感器，以及与流体致动器相邻的喷嘴，并通过第二层和第一层与流体室连通。 通过测量结构层的厚度并将厚度与预定的数据组进行比较，提供了优化的驱动信号来喷射优化的液滴，从而提高打印质量。

公开(公告)号：US20050248755A1

公开(公告)日：2005-11-10

申请号：US10841264

申请日：2004-05-07

Applicant: Chung-Cheng Chou ,  Chien-Hua Chuang

Inventor： Chung-Cheng Chou ,  Chien-Hua Chuang

IPC: G01J1/42 ,  G11C11/406

CPC classification number: G11C11/40626 ,  G11C11/406 ,  G11C2211/4061 ,  G11C2211/4068

Abstract: A method and system for DRAM refresh wherein the refresh rate is proportional to the current leakage of one or more sampling cells. The sampling cells selected are representative of the nominal leakage condition of the DRAM array and track the DRAM cell leakage rates, which are dependent upon manufacturing process variations, application influences, voltage variations and the temperature of the system, both locally and globally. As the current leakage through the DRAM increases, the refresh cycle repetition frequency increases and accordingly decreases for low leakage conditions. By adjusting the refresh rate in the manner described by the invention disclosed herein, the semiconductor conserves power by reducing unnecessary refresh cycles, generates the required delay between cycles without undue power consumption and provides a cost effective means that does not require external settings and calibration to optimize the refresh rate for the variations heretofore mentioned.

Abstract translation: 一种用于DRAM刷新的方法和系统，其中刷新率与一个或多个采样单元的电流泄漏成比例。 所选择的采样单元代表DRAM阵列的标称泄漏状态，并跟踪DRAM单元泄漏速率，这取决于本地和全局的制造工艺变化，应用影响，电压变化和系统的温度。 随着通过DRAM的电流泄漏增加，刷新周期重复频率增加并因此在低泄漏条件下降低。 通过以本文公开的本发明描述的方式调整刷新速率，半导体通过减少不必要的刷新周期来节省功率，在没有不必要的功耗的情况下产生周期之间所需的延迟，并且提供了不需要外部设置和校准的成本有效的手段 优化上述变化的刷新率。